Abstract: Onboard EC window controllers are described. The controllers are configured in close proximity to the EC window, for example, within the IGU. The controller may be part of a window assembly, which includes an IGU having one or more EC panes, and thus does not have to be matched with the EC window, and installed, in the field. The window controllers described herein have a number of advantages because they are matched to the IGU containing one or more EC devices and their proximity to the EC panes of the window overcomes a number of problems associated with conventional controller configurations. Also described are self-meshing networks for electrochromic windows.

Abstract: Onboard EC window controllers are described. The controllers are configured in close proximity to the EC window, for example, within the IGU. The controller may be part of a window assembly, which includes an IGU having one or more EC panes, and thus does not have to be matched with the EC window, and installed, in the field. The window controllers described herein have a number of advantages because they are matched to the IGU containing one or more EC devices and their proximity to the EC panes of the window overcomes a number of problems associated with conventional controller configurations. Also described are self-meshing networks for electrochromic windows.

Abstract: Certain aspects pertain to a cloud detector comprising a first detector module directed to a first region of the sky and a second detector module directed to a second region of the sky. Each detector module has a tube enclosing one or more sensing elements. The one or more sensing elements of the first detector module are configured to take weather condition readings from the first region of the sky. The one or more sensing elements of the second detector module are configured to take weather condition readings from the second region of the sky. In one aspect, the cloud detector is configured to detect cloud cover based on these weather condition readings. In some cases, the one or more sensing elements comprise an infrared radiation detector (e.g., thermopile) for measuring infrared radiation intensity and a photosensor element for measuring sunlight intensity.

Abstract: Onboard EC window controllers are described. The controllers are configured in close proximity to the EC window, for example, within the IGU. The controller may be part of a window assembly, which includes an IGU having one or more EC panes, and thus does not have to be matched with the EC window, and installed, in the field. The window controllers described herein have a number of advantages because they are matched to the IGU containing one or more EC devices and their proximity to the EC panes of the window overcomes a number of problems associated with conventional controller configurations. Also described are self-meshing networks for electrochromic windows.

Abstract: Onboard EC window controllers are described. The controllers are configured in close proximity to the EC window, for example, within the IGU. The controller may be part of a window assembly, which includes an IGU having one or more EC panes, and thus does not have to be matched with the EC window, and installed, in the field. The window controllers described herein have a number of advantages because they are matched to the IGU containing one or more EC devices and their proximity to the EC panes of the window overcomes a number of problems associated with conventional controller configurations. Also described are self-meshing networks for electrochromic windows.

Abstract: Certain aspects pertain to a cloud detector comprising a first detector module directed to a first region of the sky and a second detector module directed to a second region of the sky. Each detector module has a tube enclosing one or more sensing elements. The one or more sensing elements of the first detector module are configured to take weather condition readings from the first region of the sky. The one or more sensing elements of the second detector module are configured to take weather condition readings from the second region of the sky. In one aspect, the cloud detector is configured to detect cloud cover based on these weather condition readings. In some cases, the one or more sensing elements comprise an infrared radiation detector (e.g., thermopile) for measuring infrared radiation intensity and a photosensor element for measuring sunlight intensity.

Abstract: Window controllers and methods for controlling tinting and other functions of tinting zones of multi-zone tintable windows and multiple tinting zones of a group of tintable windows.

Abstract: Certain aspects pertain to a cloud detector comprising a first detector module directed to a first region of the sky and a second detector module directed to a second region of the sky. Each detector module has a tube enclosing one or more sensing elements. The one or more sensing elements of the first detector module are configured to take weather condition readings from the first region of the sky. The one or more sensing elements of the second detector module are configured to take weather condition readings from the second region of the sky. In one aspect, the cloud detector is configured to detect cloud cover based on these weather condition readings. In some cases, the one or more sensing elements comprise an infrared radiation detector (e.g., thermopile) for measuring infrared radiation intensity and a photosensor element for measuring sunlight intensity.

Abstract: Certain aspects pertain to a combination sensor comprising a set of physical sensors facing different directions proximate a structure, and configured to measure solar radiation in different directions. The combination sensor also comprises a virtual facade-aligned sensor configured to determine a combi-sensor value at a facade of the structure based on solar radiation readings from the set of physical sensors.

Abstract: The present invention pertains to methods for forming a metal diffusion barrier on an integrated circuit wherein the formation includes at least two operations. The first operation deposits barrier material via PVD or CVD to provide some minimal coverage. The second operation deposits an additional barrier material and simultaneously etches a portion of the barrier material deposited in the first operation. The result of the operations is a metal diffusion barrier formed in part by net etching in certain areas, in particular the bottom of vias, and a net deposition in other areas, in particular the side walls of vias. Controlled etching is used to selectively remove barrier material from the bottom of vias, either completely or partially, thus reducing the resistance of subsequently formed metal interconnects.

Abstract: Onboard EC window controllers are described. The controllers are configured in close proximity to the EC window, for example, within the IGU. The controller may be part of a window assembly, which includes an IGU having one or more EC panes, and thus does not have to be matched with the EC window, and installed, in the field. The window controllers described herein have a number of advantages because they are matched to the IGU containing one or more EC devices and their proximity to the EC panes of the window overcomes a number of problems associated with conventional controller configurations. Also described are self-meshing networks for electrochromic windows.

Abstract: A portable controller having a portable power supply for transitioning tint of an optical device such as an electrochromic device. The portable power supply has at least one battery located within a housing and a support structure for supporting the battery. The portable controller has circuitry with logic for controlling power to the optical device. In some cases, the portable power supply may provide a higher than normal drive voltage to the optical device to accelerate transition to the tint state and then may reduce the drive voltage to a normal level.

Abstract: Disclosed are apparatus and method embodiments for achieving etch and/or deposition selectivity in vias and trenches of a semiconductor wafer. That is, deposition coverage in the bottom of each via of a semiconductor wafer differs from the coverage in the bottom of each trench of such wafer. The selectivity may be configured so as to result in punch through in each via without damaging the dielectric material at the bottom of each trench or the like. In this configuration, the coverage amount deposited in each trench is greater than the coverage amount deposited in each via.

Abstract: Disclosed are apparatus and method embodiments for achieving etch and/or deposition selectivity in vias and trenches of a semiconductor wafer. That is, deposition coverage in the bottom of each via of a semiconductor wafer differs from the coverage in the bottom of each trench of such wafer. The selectivity may be configured so as to result in punch through in each via without damaging the dielectric material at the bottom of each trench or the like. In this configuration, the coverage amount deposited in each trench is greater than the coverage amount deposited in each via.

Abstract: A method of depositing thin films comprising tantalum, tantalum nitride, and copper for barrier films and seed layers within high aspect ratio openings used for copper interconnects. The barrier films and seed layers are deposited at extremely low temperature conditions wherein the wafer stage temperature of the sputter source is chilled to about ?70° C. to about 0° C. Most preferably, the present invention is practiced using a hollow cathode magnetron. The resulting tantalum and/or tantalum nitride barrier films and copper seed layers are superior in surface smoothness, grain size and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.

Abstract: A method of depositing thin films comprising tantalum, tantalum nitride, and copper for barrier films and seed layers within high aspect ratio openings used for copper interconnects. The barrier films and seed layers are deposited at extremely low temperature conditions wherein the wafer stage temperature of the sputter source is chilled to about −70° C. to about 0° C. Most preferably, the present invention is practiced using a hollow cathode magnetron. The resulting tantalum and/or tantalum nitride barrier films and copper seed layers are superior in surface smoothness, grain size and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.