Abstract: A method and apparatus for thermally processing mold wafers The method comprises: clamping a mold wafer at a first temperature on a first clamping device, the first temperature being below the hardening temperature of the plastic of the mold wafer; heating the mold wafer to a second temperature, which is higher than the first temperature and is above the hardening temperature; ending the clamping on the first clamping device and transporting the mold wafer heated to the second temperature to a second clamping device substantially contactlessly; clamping the heated mold wafer on the second clamping device; cooling the mold wafer down to a third temperature, which is lower than the second temperature and is below the hardening temperature; and ending the clamping on the second clamping device.

Abstract: The present invention provides a method and apparatus for thermally processing plastic discs, in particular mould wafers.

Abstract: The present invention provides a method for conditioning semiconductor wafers and/or hybrids having the steps: preparation of a space (1) which is at least partially enclosed and has a wafer/hybrid holding device (10) which is located therein and has the purpose of holding a semiconductor wafer and/or hybrid; and conduction of a dry fluid through the wafer/hybrid holding device (10) in order to heat-treat the wafer/hybrid holding device (10); wherein at least a portion of the fluid leaving the wafer/hybrid holding device (10) is used to condition the atmosphere within the space (1). The invention also provides a corresponding device for conditioning semiconductor wafers and/or hybrids.

Abstract: The present invention provides a method for testing semiconductor wafers by means of a temperature-regulated chuck device, comprising the following steps: controlling the temperature of the chuck device to a predetermined measurement temperature by means of a heating device having a predefined heating power and a cooling device having a predefined cooling capacity, the heating power being substantially greater than a predefined testing power; laying the rear side of a semiconductor wafer on a supporting side of the temperature-regulated chuck device; placing a probe card on the front side of the semiconductor wafer; testing the semiconductor wafer by impressing the testing power from a testing apparatus into a chip region of the front side of the semiconductor wafer by means of probes of the probe card placed on; reducing the heating power by the amount of the testing power during the testing with a substantially constant cooling capacity. The invention also provides a corresponding apparatus.

Abstract: The present invention provides a method for testing semiconductor wafers (5) by means of a temperature-regulated chuck device (1), comprising the following steps: controlling the temperature of the chuck device (1) to a predetermined measurement temperature by means of a heating device (HE) having a predefined heating power (PW) and a cooling device (11a, 11b, 11c) having a predefined cooling capacity (PK), the heating power (PW) being substantially greater than a predefined testing power (PT); laying the rear side (R) of a semiconductor wafer (5) on a supporting side (AF) of the temperature-regulated chuck device (1); placing a probe card (7?, 7?a) on the front side (O) of the semiconductor wafer (5); testing the semiconductor wafer (5) by impressing the testing power (PT) from a testing apparatus (TV) into a chip region (CH) of the front side (O) of the semiconductor wafer (5) by means of probes (91, 92) of the probe card (7?, 7?a) placed on; reducing the heating power (PW) by the amount of the testing powe

Abstract: The present invention provides a method for testing semiconductor wafers (5) by means of a probe card (7; 7?, 7?a; 7?), comprising the following steps: providing a temperature-controlled chuck device (1); laying the rear side (R) of a semiconductor wafer (5) on a supporting side (AF) of the temperature-controlled chuck device (1); placing the probe card (7; 7?, 7?a; 7?) on the front side (O) of the semiconductor wafer (5); impressing a current into a chip region of the front side (O) of the semiconductor wafer (5) by means of probes (91-94) of the chip card (7; 7?, 7?a; 7?) placed on; and directing a focused temperature-controlled fluid jet (G) onto the front side (O) of the semiconductor wafer (5), by which means a temperature of the chip region is kept substantially at a temperature of the supporting side (AF) of the temperature-controlled chuck device (1). The present invention likewise provides a corresponding apparatus for testing semiconductor wafers (5) by means of a probe card (7).

Abstract: The present invention provides a method for conditioning semiconductor wafers and/or hybrids having the steps: preparation of a space (1) which is at least partially enclosed and has a wafer/hybrid holding device (10) which is located therein and has the purpose of holding a semiconductor wafer and/or hybrid; and conduction of a dry fluid through the wafer/hybrid holding device (10) in order to heat-treat the wafer/hybrid holding device (10); wherein at least a portion of the fluid leaving the wafer/hybrid holding device (10) is used to condition the atmosphere within the space (1). The invention also provides a corresponding device for conditioning semiconductor wafers and/or hybrids.

Abstract: An apparatus for testing semiconductor wafers and the like includes a prober table for receiving the semiconductor wafers to be tested and a holder receiver for receiving holders for probes or test needles. The prober table is arranged within a container having an open upper portion that has a plate having an opening through which pass the probes or test needles into the container. Discharge elements are provided within the container that are connected via a connection to a source for air, gas or the like.