Patents by Inventor Erik Byers
Erik Byers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11329062Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating insulative tiers and wordline tiers. The stack comprises an insulator tier above the wordline tiers. The insulator tier comprises first insulator material comprising silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus. The first insulator material is patterned to form first horizontally-elongated trenches in the insulator tier. Second insulator material is formed in the first trenches along sidewalls of the first insulator material. The second insulator material is of different composition from that of the first insulator material and narrows the first trenches. After forming the second insulator material, second horizontally-elongated trenches are formed through the insulative tiers and the wordline tiers. The second trenches are horizontally along the narrowed first trenches laterally between and below the second insulator material.Type: GrantFiled: December 21, 2018Date of Patent: May 10, 2022Assignee: Micron Technology, Inc.Inventors: Justin B. Dorhout, Erik Byers, Merri L. Carlson, Indra V. Chary, Damir Fazil, John D. Hopkins, Nancy M. Lomeli, Eldon Nelson, Joel D. Peterson, Dimitrios Pavlopoulos, Paolo Tessariol, Lifang Xu
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Publication number: 20200127004Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating insulative tiers and wordline tiers. The stack comprises an insulator tier above the wordline tiers. The insulator tier comprises first insulator material comprising silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus. The first insulator material is patterned to form first horizontally-elongated trenches in the insulator tier. Second insulator material is formed in the first trenches along sidewalls of the first insulator material. The second insulator material is of different composition from that of the first insulator material and narrows the first trenches. After forming the second insulator material, second horizontally-elongated trenches are formed through the insulative tiers and the wordline tiers. The second trenches are horizontally along the narrowed first trenches laterally between and below the second insulator material.Type: ApplicationFiled: December 21, 2018Publication date: April 23, 2020Applicant: Micron Technology, Inc.Inventors: Justin B. Dorhout, Erik Byers, Merri L. Carlson, Indra V. Chary, Damir Fazil, John D. Hopkins, Nancy M. Lomeli, Eldon Nelson, Joel D. Peterson, Dimitrios Pavlopoulos, Paolo Tessariol, Lifang Xu
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Patent number: 9842965Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate in a liquid crystal device. Geometry of the textured surface provides a organization of a liquid crystal media.Type: GrantFiled: July 1, 2016Date of Patent: December 12, 2017Assignee: Micron Technology, Inc.Inventors: Anton deVilliers, Erik Byers, Scott E. Sills
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Publication number: 20160315223Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.Type: ApplicationFiled: July 1, 2016Publication date: October 27, 2016Inventors: Anton deVilliers, Erik Byers, Scott E. Sills
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Patent number: 9385276Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.Type: GrantFiled: August 13, 2015Date of Patent: July 5, 2016Assignee: Micron Technology, Inc.Inventors: Anton deVilliers, Erik Byers, Scott E. Sills
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Publication number: 20150349204Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.Type: ApplicationFiled: August 13, 2015Publication date: December 3, 2015Inventors: Anton deVilliers, Erik Byers, Scott E. Sills
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Patent number: 9112104Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.Type: GrantFiled: June 9, 2014Date of Patent: August 18, 2015Assignee: Micron Technology, Inc.Inventors: Anton deVilliers, Erik Byers, Scott E. Sills
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Publication number: 20140284614Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.Type: ApplicationFiled: June 9, 2014Publication date: September 25, 2014Inventors: Anton deVilliers, Erik Byers, Scott E. Sills
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Patent number: 8748321Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.Type: GrantFiled: May 24, 2013Date of Patent: June 10, 2014Assignee: Micron Technology, Inc.Inventors: Anton deVilliers, Erik Byers, Scott E. Sills
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Patent number: 8691477Abstract: A reticle for lens heating mitigation includes a substrate, a target pattern and a redistributive pattern. The substrate includes a live pattern region and the target pattern is disposed within the live pattern region for constructing the target pattern onto a wafer. The redistributive pattern is also disposed within the live pattern region for redistributing energy onto a lens without being printed onto the wafer and without correcting said target pattern to be printed onto the wafer.Type: GrantFiled: February 22, 2012Date of Patent: April 8, 2014Assignee: Nanya Technology Corp.Inventors: Jianming Zhou, Anton Devilliers, Erik Byers
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Publication number: 20130256692Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.Type: ApplicationFiled: May 24, 2013Publication date: October 3, 2013Applicant: Micron Technology, Inc.Inventors: Anton deVilliers, Erik Byers, Scott E. Sills
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Publication number: 20130216795Abstract: A reticle for lens heating mitigation includes a substrate, a target pattern and a redistributive pattern. The substrate includes a live pattern region and the target pattern is disposed within the live pattern region for constructing the target pattern onto a wafer. The redistributive pattern is also disposed within the live pattern region for redistributing energy onto a lens without being printed onto the wafer and without correcting said target pattern to be printed onto the wafer.Type: ApplicationFiled: February 22, 2012Publication date: August 22, 2013Inventors: Jianming Zhou, Anton Devilliers, Erik Byers
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Patent number: 8450776Abstract: Epitaxial devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.Type: GrantFiled: June 20, 2012Date of Patent: May 28, 2013Assignee: Micron Technology, Inc.Inventors: Anton deVilliers, Erik Byers, Scott Sills
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Publication number: 20120256191Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.Type: ApplicationFiled: June 20, 2012Publication date: October 11, 2012Inventors: Anton deVilliers, Erik Byers, Scott Sills
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Patent number: 8216943Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.Type: GrantFiled: June 29, 2010Date of Patent: July 10, 2012Assignee: Micron Technology, Inc.Inventors: Anton deVilliers, Erik Byers, Scott Sills
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Publication number: 20090040494Abstract: Methods and apparatuses for configuring radiation used in microlithographic processing of workpieces are disclosed herein. One particular embodiment of such a method comprises directing a radiation beam along a radiation path from a reticle to an adjustment structure. The radiation beam has a wavefront with a first configuration in an image plane generally transverse to the radiation path. The method continues by changing at least one independently controllable parameter of the adjustment structure to change the wavefront of the radiation beam from the first configuration to a second configuration. After changing the shape of the wavefront from the first configuration to the second configuration, the method continues by impinging the radiation beam on the workpiece.Type: ApplicationFiled: September 24, 2008Publication date: February 12, 2009Applicant: MICRON TECHNOLOGY, INC.Inventor: Erik Byers
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Patent number: 7446855Abstract: Methods and apparatuses for configuring radiation used in microlithographic processing of workpieces are disclosed herein. One particular embodiment of such a method comprises directing a radiation beam along a radiation path from a reticle to an adjustment structure. The radiation beam has a wavefront with a first configuration in an image plane generally transverse to the radiation path. The method continues by changing at least one independently controllable parameter of the adjustment structure to change the wavefront of the radiation beam from the first configuration to a second configuration. After changing the shape of the wavefront from the first configuration to the second configuration, the method continues by impinging the radiation beam on the workpiece.Type: GrantFiled: July 25, 2005Date of Patent: November 4, 2008Assignee: Micron Technology, IncInventor: Erik Byers
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Patent number: 7229724Abstract: Reticles having reticle patterns suitable for reducing edge of array effects are provided. The reticle patterns have unresolvable patterns formed in the periphery areas of the reticle patterns. The unresolvable patterns are non-transparent with respect to patterning radiation. Systems incorporating the reticles are also provided. Additionally, methods of forming and using the reticles are provided.Type: GrantFiled: August 16, 2004Date of Patent: June 12, 2007Assignee: Micron Technology, Inc.Inventors: William J. Baggenstoss, Byron N. Burgess, Erik Byers, William A. Stanton
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Publication number: 20070019178Abstract: Methods and apparatuses for configuring radiation used in microlithographic processing of workpieces are disclosed herein. One particular embodiment of such a method comprises directing a radiation beam along a radiation path from a reticle to an adjustment structure. The radiation beam has a wavefront with a first configuration in an image plane generally transverse to the radiation path. The method continues by changing at least one independently controllable parameter of the adjustment structure to change the wavefront of the radiation beam from the first configuration to a second configuration. After changing the shape of the wavefront from the first configuration to the second configuration, the method continues by impinging the radiation beam on the workpiece.Type: ApplicationFiled: July 25, 2005Publication date: January 25, 2007Applicant: Micron Technology, Inc.Inventor: Erik Byers
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Patent number: 7144690Abstract: The invention includes a photolithographic method in which overlapping first and second exposure patterns are formed on a photosensitive material from light passed through a single reticle. The first exposure pattern of the radiation comprises features separated by about a minimum feature spacing that can be accomplished with a single reticle exposure at the time of the photolithographic processing, and the overlapping first and second patterns comprise features separated by less than the minimum feature spacing. The invention also includes a photolithographic method of forming overlapping exposure patterns on a photosensitive material from light passed through a single reticle wherein the reticle is moved between a first exposure to a first light and a second exposure to a second light.Type: GrantFiled: December 5, 2003Date of Patent: December 5, 2006Assignee: Micron Technology, Inc.Inventors: John F. Van Itallie, Erik Byers