Patents by Inventor Erik Collart
Erik Collart has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9824850Abstract: A deceleration apparatus capable of decelerating a short spot beam or a tall ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.Type: GrantFiled: January 26, 2015Date of Patent: November 21, 2017Assignee: Advanced Ion Beam Technology, Inc.Inventors: Nicholas White, Zhimin Wan, Erik Collart
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Publication number: 20150136967Abstract: A deceleration apparatus capable of decelerating a short spot beam or a tall ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.Type: ApplicationFiled: January 26, 2015Publication date: May 21, 2015Inventors: Nicholas WHITE, Zhimin WAN, Erik COLLART
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Patent number: 8941077Abstract: A deceleration apparatus capable of decelerating a short spot beam or a tall ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.Type: GrantFiled: October 24, 2011Date of Patent: January 27, 2015Assignee: Advanced Ion Beam Technology, Inc.Inventors: Nicholas White, Zhimin Wan, Erik Collart
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Patent number: 8304330Abstract: Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.Type: GrantFiled: January 17, 2012Date of Patent: November 6, 2012Assignee: Advanced Ion Beam Technology, Inc.Inventors: John D. Pollock, Zhimin Wan, Erik Collart
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Publication number: 20120115318Abstract: Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.Type: ApplicationFiled: January 17, 2012Publication date: May 10, 2012Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.Inventors: JOHN D. POLLOCK, ZHIMIN WAN, ERIK COLLART
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Publication number: 20120097861Abstract: A deceleration apparatus capable of decelerating a short spot beam or a tall. ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.Type: ApplicationFiled: October 24, 2011Publication date: April 26, 2012Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.Inventors: Nicholas White, Zhimin Wan, Erik Collart
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Patent number: 8124508Abstract: Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.Type: GrantFiled: March 31, 2010Date of Patent: February 28, 2012Assignee: Advanced Ion Beam Technology, Inc.Inventors: John D. Pollock, Zhimin Wan, Erik Collart
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Patent number: 8039374Abstract: Techniques for low temperature ion implantation are provided to improve throughput. Specifically, the pressure of the backside gas may temporarily, continually or continuously increase before the starting of the implant process, such that the wafer may be quickly cooled down from room temperature to be essentially equal to the prescribed implant temperature. Further, after the vacuum venting process, the wafer may wait an extra time in the load lock chamber before the wafer is moved out the ion implanter, in order to allow the wafer temperature to reach a higher temperature quickly for minimizing water condensation on the wafer surface. Furthermore, to accurately monitor the wafer temperature during a period of changing wafer temperature, a non-contact type temperature measuring device may be used to monitor wafer temperature in a real time manner with minimized condensation.Type: GrantFiled: March 19, 2010Date of Patent: October 18, 2011Assignee: Advanced Ion Beam Technology, Inc.Inventors: John D. Pollock, Zhimin Wan, Erik Collart
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Publication number: 20110244669Abstract: Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.Type: ApplicationFiled: March 31, 2010Publication date: October 6, 2011Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.Inventors: JOHN D. POLLOCK, ZHIMIN WAN, ERIK COLLART
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Publication number: 20110229987Abstract: Techniques for low temperature ion implantation are provided to improve throughput. Specifically, the pressure of the backside gas may temporarily, continually or continuously increase before the starting of the implant process, such that the wafer may be quickly cooled down from room temperature to be essentially equal to the prescribed implant temperature. Further, after the vacuum venting process, the wafer may wait an extra time in the load lock chamber before the wafer is moved out the ion implanter, in order to allow the wafer temperature to reach a higher temperature quickly for minimizing water condensation on the wafer surface. Furthermore, to accurately monitor the wafer temperature during a period of changing wafer temperature, a non-contact type temperature measuring device may be used to monitor wafer temperature in a real time manner with minimized condensation.Type: ApplicationFiled: March 19, 2010Publication date: September 22, 2011Applicant: ADVANCED ION BEAM TECHNOLOGY INC.Inventors: JOHN D. POLLOCK, ZHIMIN WAN, ERIK COLLART