Patents by Inventor Erik Edelberg
Erik Edelberg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160102416Abstract: Certain embodiments herein relate to a method of electroplating copper into damascene features using a low copper, high halide concentration electrolyte having between about 4-10 g/L copper ions, between about 150-400 ppm halide ions, and about 2-15 g/L acid. Using the low copper electrolyte produces a relatively high overpotential on the plating substrate surface, allowing for a slow plating process with few fill defects. The low copper electrolyte may have a relatively high cloud point. The use of a relatively high halide ion concentration may promote improved nucleation on a seed layer, resulting in fewer and less significant voids within the features.Type: ApplicationFiled: December 14, 2015Publication date: April 14, 2016Inventors: Jian Zhou, Jonathan David Reid, Erik A. Edelberg
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Patent number: 8906194Abstract: A method for etching an ultra high aspect ratio feature in a dielectric layer through a carbon based mask is provided. The dielectric layer is selectively etched with respect to the carbon based mask, wherein the selective etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask. The selective etch is stopped. The fluorocarbon polymer is selectively removed with respect to the carbon based mask, so that the carbon based mask remains, using a trimming. The selectively removing the fluorocarbon polymer is stopped. The dielectric layer is again selectively etched with respect to the carbon based mask, wherein the second selectively etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask.Type: GrantFiled: February 2, 2010Date of Patent: December 9, 2014Assignee: Lam Research CorporationInventors: Kyeong-Koo Chi, Erik A. Edelberg
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Publication number: 20140261803Abstract: A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.Type: ApplicationFiled: March 15, 2013Publication date: September 18, 2014Inventors: Ing-Yann Wang, Jaroslaw W. Winniczek, David J. Cooperberg, Erik A. Edelberg, Robert P. Chebi
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Patent number: 8741165Abstract: An apparatus for etching a dielectric layer contained by a substrate is provided. An etch reactor comprises a top electrode and a bottom electrode. An etch gas source supplies an etch gas into the etch reactor. A first Radio Frequency (RF) source generates a first RF power with a first frequency and supplies the first RF power into the etch reactor, whereas the first frequency is between 100 kilo Hertz (kHz) and 600 kHz. A second RF source generates a second RF power with a second frequency and supplies the second RF power into the etch reactor, whereas the second frequency is at least 10 mega Hertz (MHz).Type: GrantFiled: October 7, 2010Date of Patent: June 3, 2014Assignee: Lam Research CorporationInventors: Bing Ji, Erik A. Edelberg, Takumi Yanagawa
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Publication number: 20130264201Abstract: An apparatus for etching high aspect ratio features is provided. A plasma processing chamber is provided, comprising a chamber wall forming a plasma processing chamber enclosure, a lower electrode, an upper electrode, a gas inlet, and a gas outlet. A high frequency radio frequency (RF) power source is electrically connected to at least one of the upper electrode or lower electrode. A bias power system is electrically connected to both the upper electrode and the lower electrode, wherein the bias power system is able to provide a bias to the upper and lower electrodes with a magnitude of at least 500 volts, and wherein the bias to the lower electrode is pulsed to intermittently. A gas source is in fluid connection with the gas inlet. A controller is controllably connected to the gas source, the high frequency RF power source, and the bias power system.Type: ApplicationFiled: May 31, 2013Publication date: October 10, 2013Inventor: Erik A. EDELBERG
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Patent number: 8475673Abstract: An apparatus for etching high aspect ratio features is provided. A plasma processing chamber is provided, comprising a chamber wall forming a plasma processing chamber enclosure, a lower electrode, an upper electrode, a gas inlet, and a gas outlet. A high frequency radio frequency (RF) power source is electrically connected to at least one of the upper electrode or lower electrode. A bias power system is electrically connected to both the upper electrode and the lower electrode, wherein the bias power system is able to provide a bias to the upper and lower electrodes with a magnitude of at least 500 volts, and wherein the bias to the lower electrode is pulsed to intermittently. A gas source is in fluid connection with the gas inlet. A controller is controllably connected to the gas source, the high frequency RF power source, and the bias power system.Type: GrantFiled: April 24, 2009Date of Patent: July 2, 2013Assignee: Lam Research CompanyInventor: Erik A. Edelberg
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Patent number: 8425682Abstract: A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.Type: GrantFiled: September 21, 2012Date of Patent: April 23, 2013Assignee: Lam Research CorporationInventors: Ing-Yann Wang, Jaroslaw W. Winniczek, David J. Cooperberg, Erik A. Edelberg, Robert P. Chebi
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Patent number: 8298336Abstract: A gas chamber contains upper and lower chamber bodies forming a cavity, a heating chuck for a wafer, a remote gas source, and an exhaust unit. Gas is injected into the cavity through channels in an injector. Each channel has sections that are bent with respect to each other at a sufficient angle to substantially eliminate entering light rays entering the channel from exiting the channel without reflection. The channels have funnel-shaped nozzles at end points proximate to the chuck. The injector also has thermal expansion relief slots and small gaps between the injector and mating surfaces of the chamber and gas source. The temperature of the injector is controlled by a cooling liquid in cooling channels and electrical heaters in receptacles of the injector. The upper chamber body is funnel-shaped and curves downward at an end of the upper chamber body proximate to the chuck.Type: GrantFiled: April 1, 2005Date of Patent: October 30, 2012Assignee: Lam Research CorporationInventors: Ing-Yann Wang, Jaroslaw W. Winniczek, David J. Cooperberg, Erik A. Edelberg, Robert P. Chebi
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Patent number: 7977390Abstract: A method for etching features in a dielectric layer is provided. A mask is formed over the dielectric layer. A protective silicon-containing coating is formed on exposed surfaces of the mask. The features are etched through the mask and protective silicon-containing coating. The features may be partially etched before the protective silicon-containing coating is formed.Type: GrantFiled: August 22, 2006Date of Patent: July 12, 2011Assignee: Lam Research CorporationInventors: Bing Ji, Erik A. Edelberg, Takumi Yanagawa, Zhisong Huang, Lumin Li
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Publication number: 20110021030Abstract: An apparatus for etching a dielectric layer contained by a substrate is provided. An etch reactor comprises a top electrode and a bottom electrode. An etch gas source supplies an etch gas into the etch reactor. A first Radio Frequency (RF) source generates a first RF power with a first frequency and supplies the first RF power into the etch reactor, whereas the first frequency is between 100 kilo Hertz (kHz) and 600 kHz. A second RF source generates a second RF power with a second frequency and supplies the second RF power into the etch reactor, whereas the second frequency is at least 10 mega Hertz (MHz).Type: ApplicationFiled: October 7, 2010Publication date: January 27, 2011Applicant: Lam Research CorporationInventors: Bing Ji, Erik A. Edelberg, Takumi Yanagawa
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Publication number: 20100273332Abstract: An apparatus for etching high aspect ratio features is provided. A plasma processing chamber is provided, comprising a chamber wall forming a plasma processing chamber enclosure, a lower electrode, an upper electrode, a gas inlet, and a gas outlet. A high frequency radio frequency (RF) power source is electrically connected to at least one of the upper electrode or lower electrode. A bias power system is electrically connected to both the upper electrode and the lower electrode, wherein the bias power system is able to provide a bias to the upper and lower electrodes with a magnitude of at least 500 volts, and wherein the bias to the lower electrode is pulsed to intermittently. A gas source is in fluid connection with the gas inlet. A controller is controllably connected to the gas source, the high frequency RF power source, and the bias power system.Type: ApplicationFiled: April 24, 2009Publication date: October 28, 2010Applicant: LAM RESEARCH CORPORATIONInventor: Erik A. Edelberg
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Publication number: 20100132889Abstract: A method for etching an ultra high aspect ratio feature in a dielectric layer through a carbon based mask is provided. The dielectric layer is selectively etched with respect to the carbon based mask, wherein the selective etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask. The selective etch is stopped. The fluorocarbon polymer is selectively removed with respect to the carbon based mask, so that the carbon based mask remains, using a trimming. The selectively removing the fluorocarbon polymer is stopped. The dielectric layer is again selectively etched with respect to the carbon based mask, wherein the second selectively etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask.Type: ApplicationFiled: February 2, 2010Publication date: June 3, 2010Applicant: LAM RESEARCH CORPORATIONInventors: Kyeong-Koo CHI, Erik A. Edelberg
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Patent number: 7682986Abstract: A method for etching an ultra high aspect ratio feature in a dielectric layer through a carbon based mask is provided. The dielectric layer is selectively etched with respect to the carbon based mask, wherein the selective etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask. The selective etch is stopped. The fluorocarbon polymer is selectively removed with respect to the carbon based mask, so that the carbon based mask remains, using a trimming. The selectively removing the fluorocarbon polymer is stopped. The dielectric layer is again selectively etched with respect to the carbon based mask, wherein the second selectively etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask.Type: GrantFiled: February 5, 2007Date of Patent: March 23, 2010Assignee: Lam Research CorporationInventors: Kyeong-Koo Chi, Erik A. Edelberg
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Patent number: 7547636Abstract: A method for selectively etching an ultra high aspect ratio feature dielectric layer through a carbon based mask in an etch chamber is provided. A flow of an etch gas is provided, comprising a fluorocarbon containing molecule and an oxygen containing molecule to the etch chamber. A pulsed bias RF signal is provided. An energizing RF signal is provided to transform the etch gas to a plasma.Type: GrantFiled: February 5, 2007Date of Patent: June 16, 2009Assignee: Lam Research CorporationInventors: Kyeong-Koo Chi, Erik A. Edelberg
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Patent number: 7542134Abstract: A system for inspecting a substrate includes a camera and a light source. The camera is oriented toward a field of view. The field of view encompasses at least a first portion of a first surface of the substrate. The light source is oriented toward the field of view at a first angle ? relative to the first surface of the substrate. A method for inspecting a substrate is also included.Type: GrantFiled: June 2, 2008Date of Patent: June 2, 2009Assignee: Lam Research CorporationInventors: Aleksander Owczarz, Jaroslaw W. Winniczek, Luai Nasser, Alan Schoepp, Fred C. Redeker, Erik Edelberg
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Publication number: 20080273195Abstract: A system for inspecting a substrate includes a camera and a light source. The camera is oriented toward a field of view. The field of view encompasses at least a first portion of a first surface of the substrate. The light source is oriented toward the field of view at a first angle ? relative to the first surface of the substrate. A method for inspecting a substrate is also included.Type: ApplicationFiled: June 2, 2008Publication date: November 6, 2008Inventors: Aleksander Owczarz, Jaroslaw W. Winniczek, Luai Nasser, Alan Schoepp, Fred C. Redeker, Erik Edelberg
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Publication number: 20080188082Abstract: A method for selectively etching an ultra high aspect ratio feature dielectric layer through a carbon based mask in an etch chamber is provided. A flow of an etch gas is provided, comprising a fluorocarbon containing molecule and an oxygen containing molecule to the etch chamber. A pulsed bias RF signal is provided. An energizing RF signal is provided to transform the etch gas to a plasma.Type: ApplicationFiled: February 5, 2007Publication date: August 7, 2008Inventors: Kyeong-Koo Chi, Erik A. Edelberg
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Publication number: 20080188081Abstract: A method for etching an ultra high aspect ratio feature in a dielectric layer through a carbon based mask is provided. The dielectric layer is selectively etched with respect to the carbon based mask, wherein the selective etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask. The selective etch is stopped. The fluorocarbon polymer is selectively removed with respect to the carbon based mask, so that the carbon based mask remains, using a trimming. The selectively removing the fluorocarbon polymer is stopped. The dielectric layer is again selectively etched with respect to the carbon based mask, wherein the second selectively etching provides a net deposition of a fluorocarbon based polymer on the carbon based mask.Type: ApplicationFiled: February 5, 2007Publication date: August 7, 2008Inventors: Kyeong-Koo Chi, Erik A. Edelberg
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Publication number: 20080182422Abstract: Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including a fluorine-containing gas, an oxygen-containing gas, and a hydrocarbon gas, and one or more optional components to generate a plasma effective to etch the carbon-rich layer with low removal of the inorganic layer. The carbon-rich layer can be removed in the same processing chamber, or alternatively can be removed in a different processing chamber, as used to remove the bulk photoresist.Type: ApplicationFiled: November 5, 2007Publication date: July 31, 2008Applicant: Lam Research CorporationInventors: Erik A. Edelberg, Robert P. Chebi, Alex F. Panchula
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Patent number: 7397555Abstract: A system for inspecting a substrate includes a camera and a light source. The camera is oriented toward a field of view. The field of view encompasses at least a first portion of a first surface of the substrate. The light source is oriented toward the field of view at a first angle ? relative to the first surface of the substrate. A method for inspecting a substrate is also included.Type: GrantFiled: December 17, 2004Date of Patent: July 8, 2008Assignee: Lam Research CorporationInventors: Aleksander Owczarz, Jaroslaw W. Winniczek, Luai Nasser, Alan Schoepp, Fred C. Redeker, Erik Edelberg