Patents by Inventor Erik Henri Adriaan DELVIGNE
Erik Henri Adriaan DELVIGNE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11782349Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: January 24, 2023Date of Patent: October 10, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Patent number: 11774862Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.Type: GrantFiled: October 14, 2021Date of Patent: October 3, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Hakki Ergün Cekli, Masashi Ishibashi, Wendy Johanna Martina Van De Ven, Willem Seine Christian Roelofs, Elliott Gerard McNamara, Rizvi Rahman, Michiel Kupers, Emil Peter Schmitt-Weaver, Erik Henri Adriaan Delvigne
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Patent number: 11592753Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: April 7, 2022Date of Patent: February 28, 2023Assignee: ASML Netherlands B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Publication number: 20220229373Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: April 7, 2022Publication date: July 21, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc HAUPTMANN, Michiel KUPERS, Lydia Marianna VERGAIJ-HUIZER, Erik Johannes Maria WALLERBOS, Erik Henri Adriaan DELVIGNE, Willem Seine Christian ROELOFS, Hakki Ergün CEKLI, Stefan Cornelis Theodorus VAN DER SANDEN, Cédric Désiré GROUWSTRA, David Frans Simon DECKERS, Manuel GIOLLO, Iryna DOVBUSH
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Patent number: 11327407Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: November 24, 2020Date of Patent: May 10, 2022Assignee: ASML Netherlands B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Publication number: 20220035259Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.Type: ApplicationFiled: October 14, 2021Publication date: February 3, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Hakki Ergün CEKLI, Masashi ISHIBASHI, Wendy Johanna Martina VAN DE VEN, Willem Seine Christian ROELOFS, Elliott Gerard MC NAMARA, Rizvi RAHMAN, Michiel KUPERS, Emil Peter SCHMITT-WEAVER, Erik Henri Adriaan DELVIGNE
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Patent number: 11175591Abstract: Measurements are obtained from locations across a substrate before or after performing a lithographic process step. Examples of such measurements include alignment measurements made prior to applying a pattern to the substrate, and measurements of a performance parameter such as overlay, after a pattern has been applied. A set of measurement locations is selected from among all possible measurement locations. At least a subset of the selected measurement locations are selected dynamically, in response to measurements obtained using a preliminary selection of measurement locations. Preliminary measurements of height can be used to select measurement locations for alignment. In another aspect, outlier measurements are detected based on supplementary data such as height measurements or historic data.Type: GrantFiled: April 21, 2017Date of Patent: November 16, 2021Assignee: ASML Netherlands B.V.Inventors: Hakki Ergün Cekli, Masashi Ishibashi, Wendy Johanna Martina Van De Ven, Willem Seine Christian Roelofs, Elliott Gerard McNamara, Rizvi Rahman, Michiel Kupers, Emil Peter Schmitt-Weaver, Erik Henri Adriaan Delvigne
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Publication number: 20210080836Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: November 24, 2020Publication date: March 18, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc HAUPTMANN, Michiel KUPERS, Lydia Marianna VERGAIJ-HUIZER, Erik Johannes Maria WALLERBOS, Erik Henri Adriaan DELVIGNE, Willem Seine Christian ROELOFS, Hakki Ergün CEKLI, Stefan Cornelis Theodorus VAN DER SANDEN, Cédric Désiré GROUWSTRA, David Frans Simon DECKERS, Manuel GIOLLO, Iryna DOVBUSH
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Patent number: 10877381Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: September 28, 2017Date of Patent: December 29, 2020Assignee: ASML Netherlands B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Publication number: 20200019067Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: September 28, 2017Publication date: January 16, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc HAUPTMANN, Michiel KUPERS, Lydia Marianna VERGAIJ-HUIZER, Erik Johannes Maria WALLERBOS, Erik Henri Adriaan DELVIGNE, Willem Seine Christian ROELOFS, Hakki Ergün CEKLI, Stefan Cornelis Theodorus VAN DER SANDEN, Cedric Desire GROUWSTRA, David Frans Simon DECKERS, Manuel GIOLLO, Iryna DOVBUSH