Abstract: A particle detector. The particle detector comprises one or more light sources, an optical sensor, and a controller. The one or more light sources are collectively operable to simultaneously produce at least two wavelength ranges of emitted light. The optical sensor is configured to sense light of the at least two wavelength ranges emitted by the one or more light sources and to distinguish each range. The controller is configured to detect particles based on the light sensed by the optical sensor.

Abstract: An optical detector (1) on an application specific integrated circuit (ASIC) comprises at least one photodiode (5) for receiving incident light and configured to provide at least one diode signal, a modulator (2) configured to provide an AC drive signal and to provide a reference signal associated with the AC drive signal; and a lock-in amplifier (6) configured to receive said at least one diode signal from said at least one photodiode (5) and to receive the reference signal from the modulator (2), and to determine at least one of a phase and an amplitude of said at least one diode signal using the reference signal.

Abstract: An integrated optical transducer for detecting dynamic pressure changes comprises a micro-electro-mechanical system, MEMS, die having a MEMS diaphragm with a first side exposed to the dynamic pressure changes and a second side. The transducer further comprises an application specific integrated circuit, ASIC, die having an evaluation circuit configured to detect a deflection of the MEMS diaphragm, in particular of the second side of the MEMS diaphragm. The MEMS die is arranged with respect to the ASIC die such that a gap with a gap height is formed between the second side of the diaphragm and a first surface of the ASIC die and the MEMS diaphragm, the ASIC die and a suspension structure of the MEMS die delineate a back volume of the integrated optical transducer.

Abstract: A gas sensor comprises an electrochemical film, a plurality of electrodes coupled with the electrochemical film and a semiconductor wafer coupled with the plurality of electrodes. A passivation layer is formed between the electrochemical firm and the semiconductor wafer and a dielectric layer is coupled between the electrochemical film and the semiconductor wafer.

Abstract: A micro-electro-mechanical system, MEMS, microphone assembly comprises an enclosure defining a first cavity, and a MEMS microphone arranged inside the first cavity. The microphone comprises a first die with bonding structures and a MEMS diaphragm, and a second die having an application specific integrated circuit, ASIC. The second die is bonded to the bonding structures such that a gap is formed between a first side of the diaphragm and the second die, with the gap defining a second cavity. The first side of the diaphragm is interfacing with the second cavity and a second side of the diaphragm is interfacing with the environment via an acoustic inlet port of the enclosure. The bonding structures are arranged such that pressure ventilation openings are formed that connect the first cavity and the second cavity.

Abstract: A particle detector. The particle detector comprises one or more light sources, an optical sensor, and a controller. The one or more light sources are collectively operable to simultaneously produce at least two wavelength ranges of emitted light. The optical sensor is configured to sense light of the at least two wavelength ranges emitted by the one or more light sources and to distinguish each range. The controller is configured to detect particles based on the light sensed by the optical sensor.

Abstract: Apparatus for reading a test region (6, 7) of an assay, e.g. on a lateral flow test strip (5), the apparatus comprising: an optical detector (2, 4; FIG. 1c), comprising an optical input for receiving light emitted from the test region (6, 7) of the assay and an electrical output; an electrical signal processor, electrically coupled to the electrical output; and a plurality of spectral filters (FIG. 1b) substantially transparent to a plurality of different wavelengths.

Abstract: A gas sensor comprises an electrochemical film, a plurality of electrodes coupled with the electrochemical film and a semiconductor wafer coupled with the plurality of electrodes. A passivation layer is formed between the electrochemical firm and the semiconductor wafer and a dielectric layer is coupled between the electrochemical film and the semiconductor wafer.

Abstract: An integrated circuit and a method of making the same. The integrated circuit includes a semiconductor substrate having a major surface. The integrated circuit also includes a directional light sensor. The directional light sensor includes a plurality of photodetectors located on the major surface. The directional light sensor also includes one or more barriers, wherein each barrier is positioned to shade one or more of the photodetectors from light incident upon the integrated circuit from a respective direction. The directional light sensor is operable to determine a direction of light incident upon the integrated circuit by comparing an output signal of at least two of the photodetectors.

Abstract: One example discloses an interferometer device, including: a first side, having a first reflectivity; a second side, having a second reflectivity; a cavity disposed between the first and second sides, and having an opening configured to receive a substance; an electromagnetic source input region configured to receive an electromagnetic signal; and an electromagnetic detector output region configured to output the electromagnetic signal modulated in response to the substance in the cavity.

Abstract: The invention provides a semiconductor device (11) for radiation detection, which comprises a substrate region (1) of a substrate semiconductor material, such as silicon, and a detection region (3) at a surface of the semiconductor device (11), in which detection region (3) charge carriers of a first conductivity type, such as electrons, are generated and detected upon incidence of electromagnetic radiation (L) on the semiconductor device (11). The semiconductor device (11) further comprises a barrier region (2,5,14) of a barrier semiconductor material or an isolation material, which barrier region (2,5,14) is an obstacle between the substrate region (1) and the detection region (3) for charge carriers that are generated in the substrate region (1) by penetration of ionizing radiation (X), such as X-rays, into the substrate region (1).

Abstract: The spatial light modulator device (SLM) for providing a spatial light pattern which is alterable in response to an electric signal comprises a first modulator element (ME1) and a second modulator element (ME2). The first light beam (LB1) processed by the first modulator element (ME1) and the second light beam (LB2) processed by the second modulator element (ME2) can be superimposed for forming the spatial light pattern. In this way a defect in the first modulator element (ME1) can be compensated a corresponding pixel of the second modulator element (ME2). The spatial light pattern provided by the first modulator element (ME1) and the second modulator element (ME2) are complementary and combine to the desired spatial light pattern. The spatial light modulator device (SLM) may be used in a lithography apparatus (LA) or a display device (DD).

Abstract: The invention provides a semiconductor device (11) for radiation detection, which comprises a substrate region (1) of a substrate semiconductor material, such as silicon, and a detection region (3) at a surface of the semiconductor device (11), in which detection region (3) charge carriers of a first conductivity type, such as electrons, are generated and detected upon incidence of electromagnetic radiation (L) on the semiconductor device (11). The semiconductor device (11) further comprises a barrier region (2,5,14) of a barrier semiconductor material or an isolation material, which barrier region (2,5,14) is an obstacle between the substrate region (1) and the detection region (3) for charge carriers that are generated in the substrate region (1) by penetration of ionizing radiation (X), such as X-rays, into the substrate region (1).

Abstract: The spatial light modulator device (SLM) for providing a spatial light pattern which is alterable in response to an electric signal comprises a first modulator element (ME1) and a second modulator element (ME2). The first light beam (LB1) processed by the first modulator element (ME1) and the second light beam (LB2) processed by the second modulator element (ME2) can be superimposed for forming the spatial light pattern. In this way a defect in the first modulator element (ME1) can be compensated a corresponding pixel of the second modulator element (ME2). The spatial light pattern provided by the first modulator element (ME1) and the second modulator element (ME2) are complementary and combine to the desired spatial light pattern. The spatial light modulator device (SLM) may be used in a lithography apparatus (LA) or a display device (DD).

Abstract: The invention relates to a semiconductor device comprising bond pad structure, which bond pad structure comprises a bond pad disposed above at least one layered stricture, but preferably a stack of layered structures, wherein the layered structure comprises a metal layer and a layer of a dielectric material. In the layer of dielectric material via lines are present and arranged in such a way that the metal layers and the via lines form isolated areas filled with the dielectric material.

Abstract: A method of manufacturing a semiconductor device, in which a surface (1) of a semiconductor body (2) is provided with a first metallization layer comprising conductor tracks (3, 4), among which a number having a width w an a number having a greater width. On this structure an insulating layer (5) is deposited by means of a process in which the thickness of the formed insulating layer (5) is dependent on the width of the subjacent conductor tracks (3, 4), after which a capping layer (6) is deposited on the insulating layer (5). Then the silicon oxide layer is planarized by means of a polishing process. In this method, the conductor tracks having a width greater than w are split up into a number of parallel strips (10) having a width w, which strips are locally connected to one another.

Abstract: The invention relates to a semiconductor device comprising a bond pad structure, which bond pad structure comprises a bond pad disposed above at least one layered structure, but preferably a stack of layered structures, wherein the layered structure comprises a metal layer and a layer of a dielectric material. In the layer of dielectric material via lines are present and arranged in such a way that the metal layers and the via lines form isolated areas filled with the dielectric material.