Patents by Inventor Erik Janzen
Erik Janzen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10403746Abstract: The present document discloses an AlxGa1?xN/GaN heterostructure, wherein x is 0.10<x<0.60, preferably 0.13<x<0.40, most preferably 0.15<x<0.25. The heterostructure comprises an AlxGa1?xN layer formed directly on a GaN layer. The heterostructure presents a room temperature 2DEG mobility of 1800 to 2300 cm2/Vs, preferably 1900 to 2300 cm2/Vs, most preferably 2000 to 2300 cm2/Vs, and a pinch-off voltage which differs by 0.3 V or less, preferably by 0.25 V or less, most preferably by 0.20 V or less from a theoretical value of the pinch-off voltage, wherein the theoretical value of the pinch-off voltage is estimated based on an electrostatic band diagram obtained by XRD, of the AlxGa1?xN/GaN heterostructure.Type: GrantFiled: March 31, 2015Date of Patent: September 3, 2019Assignee: SWEGAN ABInventors: Erik Janzén, Jr-Tai Chen
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Patent number: 10269565Abstract: The present document discloses a semiconductor device structure (1) comprising a SiC substrate (11), an Inx1Aly1Ga1-x1-y1N buffer layer (13), wherein x1=0-1, y1=0-1 and x1+y1=1, and an Inx2Aly2Ga1-x2-y2N nucleation layer (12), wherein x2=0-1, y2=0-1 and x2+y2=1, sandwiched between the SiC substrate (11) and the buffer layer (13). The buffer layer (13) presents a rocking curve with a (102) peak having a FWHM below 250 arcsec, and the nucleation layer (12) presents a rocking curve with a (105) peak having a FWHM below 200 arcsec, as determined by X-ray Diffraction (XRD). Methods of making such a semiconductor device structure are disclosed.Type: GrantFiled: January 9, 2015Date of Patent: April 23, 2019Assignee: SWEGAN ABInventors: Erik Janzén, Jr-Tai Chen
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Patent number: 10199222Abstract: The present document discloses a semiconductor device structure (1) comprising a SiC substrate (11), an Inx1Aly1Ga1-x1-y1N buffer layer (13), wherein x1=0-1, y1=0-1 and x1+y1=1, and an Inx2Aly2Ga1-x2-y2N nucleation layer (12), wherein x2=0-1, y2=0-1 and x2+y2=1, sandwiched between the SiC substrate (11) and the buffer layer (13). The buffer layer (13) presents a rocking curve with a (102) peak having a FWHM below 250 arcsec, and the nucleation layer (12) presents a rocking curve with a (105) peak having a FWHM below 200 arcsec, as determined by X-ray Diffraction (XRD). Methods of making such a semiconductor device structure are disclosed.Type: GrantFiled: January 9, 2015Date of Patent: February 5, 2019Assignee: SWEGAN ABInventors: Erik Janzén, Jr-Tai Chen
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Publication number: 20180358457Abstract: The present document discloses an AlxGa1-xN/GaN heterostructure, wherein x is 0.10<x<0.60, preferably 0.13<x<0.40, most preferably 0.15<x<0.25. The heterostructure comprises an AlxGa1-xN layer formed directly on a GaN layer. The heterostructure presents a room temperature 2DEG mobility of 1800 to 2300 cm2/Vs, preferably 1900 to 2300 cm2/Vs, most preferably 2000 to 2300 cm2/Vs, and a pinch-off voltage which differs by 0.3 V or less, preferably by 0.25 V or less, most preferably by 0.20 V or less from a theoretical value of the pinch-off voltage, wherein the theoretical value of the pinch-off voltage is estimated based on an electrostatic band diagram obtained by XRD, of the AlxGa1-xN/GaN heterostructure.Type: ApplicationFiled: March 31, 2015Publication date: December 13, 2018Inventors: Erik Janzén, Jr-Tai Chen
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Patent number: 10017877Abstract: A silicon carbide growth method for growing a silicon carbide crystal on a substrate in a hot wall reaction chamber heated to a temperature between 1600° C. and 2000° C. Process gases enter the reaction chamber utilizing at least a primary gas flow, a secondary gas flow, and a shower gas flow. The shower gas flow is fed substantially perpendicularly to the primary and secondary gas flows and is directed towards the substrate. The primary and secondary gas flows are oriented substantially parallel to the surface of the substrate. A silicon precursor gas is entered by the primary gas flow. A hydrocarbon precursor gas is entered in at least one of the primary gas flow, the secondary gas flow, or the shower gas flow. Hydrogen is entered primarily in the secondary flow and the shower head flow. A CVD reactor chamber for use in processing the method.Type: GrantFiled: January 29, 2013Date of Patent: July 10, 2018Assignee: EPILUVAC ABInventors: Erik Janzén, Olof Kordina
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Publication number: 20180053649Abstract: A method to grow a semi insulating SiC layer. The method may include growing the semi insulating SiC layer on a substrate, and creating deep defects in the grown semi insulating SiC layer, whereby a semi insulating property is created in the grown semi insulating SiC layer. Alternatively, the method may include growing a semi insulating SiC layer, creating deep defects in the grown semi insulating SiC layer, whereby the semi insulating property is created in the grown semi insulating SiC layer, and using source material during the growth such that the semi insulating SiC layer is made isotope enriched.Type: ApplicationFiled: October 31, 2017Publication date: February 22, 2018Applicant: SweGaN ABInventors: Erik Janzén, Olof Kordina
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Publication number: 20170365469Abstract: The present document discloses a semiconductor device structure (1) comprising a SiC substrate (11), an Inx1Aly1Ga1?x1?y1N buffer layer (13), wherein x1=0?1, y1=0?1 and x1+y1=1, and an Inx2Aly2Ga1?x2?y2N nucleation layer (12), wherein x2=0?1, y2=0?1 and x2+y2=1, sandwiched between the SiC substrate (11) and the buffer layer (13). The buffer layer (13) presents a rocking curve with a (102) peak having a FWHM below 250 arcsec, and the nucleation layer (12) presents a rocking curve with a (105) peak having a FWHM below 200 arcsec, as determined by X-ray Diffraction (XRD). Methods of making such a semiconductor device structure are disclosed.Type: ApplicationFiled: January 9, 2015Publication date: December 21, 2017Inventors: Erik Janzén, Jr-Tai Chen
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Publication number: 20160133461Abstract: A method to grow a semi insulating SiC layer. The method may include growing the semi insulating SiC layer on a substrate, and creating deep defects in the grown semi insulating SiC layer, whereby a semi insulating property is created in the grown semi insulating SiC layer. Alternatively, the method may include growing a semi insulating SiC layer, creating deep defects in the grown semi insulating SiC layer, whereby the semi insulating property is created in the grown semi insulating SiC layer, and using source material during the growth such that the semi insulating SiC layer is made isotope enriched.Type: ApplicationFiled: June 27, 2014Publication date: May 12, 2016Inventors: Erik JANZÉN, Olof KORDINA
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Publication number: 20150013595Abstract: A silicon carbide growth method for growing a silicon carbide crystal on a substrate in a hot wall reaction chamber heated to a temperature between 1600° C. and 2000° C. Process gases enter the reaction chamber utilizing at least a primary gas flow, a secondary gas flow, and a shower gas flow. The shower gas flow is fed substantially perpendicularly to the primary and secondary gas flows and is directed towards the substrate. The primary and secondary gas flows are oriented substantially parallel to the surface of the substrate. A silicon precursor gas is entered by the primary gas flow. A hydrocarbon precursor gas is entered in at least one of the primary gas flow, the secondary gas flow, or the shower gas flow. Hydrogen is entered primarily in the secondary flow and the shower head flow. A CVD reactor chamber for use in processing the method.Type: ApplicationFiled: January 29, 2013Publication date: January 15, 2015Inventors: Erik Janzén, Olof Kordina
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Publication number: 20080149020Abstract: A method and a device to grow from the vapor phase, a single crystal of either SiC, a group III-nitride, or alloys thereof, at a growth rate and for a period of time sufficient to produce a crystal of preferably several centimeters length. The diameter of the growing crystal may be controlled. To prevent the formation of undesirable polycrystalline deposits on surfaces in the downstream vicinity of the single crystal growth area, the local supersaturation of at least one component of the material grown is lowered by introducing a separate gas flow comprising at least one halogen element or a combination of said halogen and hydrogen species.Type: ApplicationFiled: February 29, 2008Publication date: June 26, 2008Applicant: NORSTEL ABInventors: Erik Janzen, Peter Raback, Alexandre Ellison
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Patent number: 7361222Abstract: A method and a device to grow from the vapor phase, a single crystal of either SiC, a group III-nitride, or alloys thereof, at a growth rate and for a period of time sufficient to produce a crystal of preferably several centimeters length. The diameter of the growing crystal may be controlled. To prevent the formation of undesirable polycrystalline deposits on surfaces in the downstream vicinity of the single crystal growth area, the local supersaturation of at least one component of the material grown is lowered by introducing a separate gas flow comprising at least one halogen element or a combination of said halogen and hydrogen species.Type: GrantFiled: April 23, 2004Date of Patent: April 22, 2008Assignee: Norstel ABInventors: Erik Janzén, Peter Råback, Alexandre Ellison
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Patent number: 7018597Abstract: The purpose of the invention is to provide a high resistivity silicon carbide substrate with electrical properties and structural quality suitable for subsequent device manufacturing, such as for example high frequency devices, so that the devices can exhibit stable and linear characteristics and to provide a high resistivity silicon carbide substrate having a low density of structural defects and a substantially controlled uniform radial distribution of its resistivity.Type: GrantFiled: October 28, 2002Date of Patent: March 28, 2006Assignee: Norstel ABInventors: Alexandre Ellison, Nguyen Tien Son, Björn Magnusson, Erik Janzén
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Publication number: 20050000406Abstract: A method and a device to grow from the vapor phase, a single crystal of either SiC, a group III-nitride, or alloys thereof, at a growth rate and for a period of time sufficient to produce a crystal of preferably several centimeters length. The diameter of the growing crystal may be controlled. To prevent the formation of undesirable polycrystalline deposits on surfaces in the downstream vicinity of the single crystal growth area, the local supersaturation of at least one component of the material grown is lowered by introducing a separate gas flow comprising at least one halogen element or a combination of said halogen and hydrogen species.Type: ApplicationFiled: April 23, 2004Publication date: January 6, 2005Applicant: OKMETIC OYJInventors: Erik Janzen, Peter Raback, Alexandre Ellison
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Publication number: 20030079676Abstract: The purpose of the invention is to provide a high resistivity silicon carbide substrate with electrical properties and structural quality suitable for subsequent device manufacturing, such as for example high frequency devices, so that the devices can exhibit stable and linear characteristics and to provide a high resistivity silicon carbide substrate having a low density of structural defects and a substantially controlled uniform radial distribution of its resistivity. (FIG. 2).Type: ApplicationFiled: October 28, 2002Publication date: May 1, 2003Inventors: Alexandre Ellison, Nguyen Tien Son, Bjorn Magnusson, Erik Janzen
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Patent number: 6096627Abstract: A method for introducing an impurity dopant into a semiconductor layer of SiC is provided. Ions are implanted into the semiconductor layer so that a near surface of the semiconductor layer becomes doped and amorphous. The semiconductor layer is then annealed at a temperature so that the dopant diffuses into a non-implanted sublayer of the semiconductor layer below the near surface layer.Type: GrantFiled: July 15, 1998Date of Patent: August 1, 2000Assignee: ABB Research Ltd.Inventors: Christopher Harris, Andrei Konstantinov, Erik Janzen
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Patent number: 6048398Abstract: In a method for epitaxially growing objects of SiC, a Group III-nitride or alloys thereof on a substrate (13) received in a susceptor (7) having circumferential walls (8) these walls and by that the substrate and a source material (24) for the growth are heated above a temperature level from which sublimation of the material grown starts to increase considerably. The carrier gas flow is fed into the susceptor towards the substrate for carrying said source material to the substrate for said growth. At least a part of said source material for said growth is added to the carrier gas flow upstream the susceptor (7) and carried by the carrier gas flow to the susceptor in one of a) a solid state and b) a liquid state for being brought to a vapor state in a container comprising said susceptor by said heating and carried in a vapor state to said substrate for said growth.Type: GrantFiled: October 16, 1995Date of Patent: April 11, 2000Assignees: ABB Research Ltd., Okmetic Ltd.Inventors: Asko Erkki Vehanen, Rositza Todorova Yakimova, Marko Tuominen, Olle Kordina, Christer Hallin, Erik Janzen
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Patent number: 6039812Abstract: A device for epitaxially growing objects of for instance SiC by Chemical Vapor Deposition on a substrate has a first conduit (24) arranged to conduct substantially only a carrier gas to a room (18) receiving the substrate and a second conduit (25) received in the first conduit, having a smaller cross-section than the first conduit and extending in the longitudinal direction of the first conduit with a circumferential space separating it from inner walls of the first conduit. The second conduit is adapted to conduct substantially the entire flow of reactive gases and it ends as seen in the direction of the flows, and emerges into the first conduit at a distance from said room.Type: GrantFiled: October 28, 1997Date of Patent: March 21, 2000Assignees: ABB Research Ltd., Okmetic Ltd.Inventors: Alex Ellison, Olle Kordina, Chun-Yuan Gu, Christer Hallin, Erik Janzen, Marko Tuominen
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Patent number: 6030661Abstract: A method for epitaxially growing objects of SiC, a Group III-nitride or alloys thereof by Chemical Vapor Deposition on a substrate received in a susceptor having circumferential walls, the method comprises heating the circumferential susceptor walls, and thereby the substrate and a gas mixture led to the substrate for the growth, above a temperature level at which sublimination of the material grown starts to considerably increase, and feeding the gas mixture into the susceptor with a composition and at a rate that ensures a positive growth.Type: GrantFiled: August 25, 1997Date of Patent: February 29, 2000Assignees: ABB Research Ltd., Okmetic Ltd.Inventors: Olle Kordina, Christer Hallin, Erik Janzen
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Patent number: 5900648Abstract: A semiconductor device comprises a semiconductor layer of SiC and an insulating layer thereon for insulating the SiC layer with respect to a metal plate constituting a gate and connectable to a voltage for creating a conducting surface channel at a SiC layer-insulating layer interface, wherein at least a portion of the insulating layer closest to the interface is made of a crystalline material which is substantially lattice-matched to SiC and has substantially the same coefficient of thermal expansion as SiC; and wherein the material has AlN as the only component or as a major component of an alloy with insulating properties.Type: GrantFiled: March 28, 1997Date of Patent: May 4, 1999Assignee: ABB Research Ltd.Inventors: Christopher Harris, Andrei Konstantinov, Erik Janzen
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Patent number: RE49285Abstract: The present document discloses a semiconductor device structure (1) comprising a SiC substrate (11), an Inx1Aly1Ga1-x1-y1N buffer layer (13), wherein x1=0-1, y1=0-1 and x1+y1=1, and an Inx2Aly2Ga1-x2-y2N nucleation layer (12), wherein x2=0-1, y2=0-1 and x2+y2=1, sandwiched between the SiC substrate (11) and the buffer layer (13). The buffer layer (13) presents a rocking curve with a (102) peak having a FWHM below 250 arcsec, and the nucleation layer (12) presents a rocking curve with a (105) peak having a FWHM below 200 arcsec, as determined by X-ray Diffraction (XRD). Methods of making such a semiconductor device structure are disclosed.Type: GrantFiled: December 28, 2020Date of Patent: November 8, 2022Assignee: SWEGAN ABInventors: Erik Janzén, Jr-Tai Chen