Patents by Inventor Erik K. Duerr
Erik K. Duerr has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10636929Abstract: An avalanche photodiode detector is provided with a substrate including an array of avalanche photodiodes. An optical interface surface of the substrate is arranged for accepting external input radiation. There is provided at least one cross-talk blocking layer of material including apertures positioned to allow external input radiation to reach photodiodes and including material regions positioned for attenuating radiation in the substrate that is produced by photodiodes in the array. Alternatively at least one cross-talk blocking layer of material is disposed on the optical interface surface of the substrate to allow external input radiation to reach photodiodes and attenuate radiation in the substrate that is produced by photodiodes in the array. At least one cross-talk filter layer of material can be disposed in the substrate adjacent to the photodiode structures, including a material that absorbs radiation in the substrate that is produced by photodiodes in the array.Type: GrantFiled: April 30, 2010Date of Patent: April 28, 2020Assignee: Massachusetts Institute of TechnologyInventors: K. Alexander McIntosh, David C. Chapman, Joseph P. Donnelly, Douglas C. Oakley, Antonio Napoleone, Erik K. Duerr, Simon Verghese, Richard D. Younger
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Patent number: 10361334Abstract: An avalanche photodiode detector is provided with a substrate including an array of avalanche photodiodes. An optical interface surface of the substrate is arranged for accepting external input radiation. There is provided at least one cross-talk blocking layer of material including apertures positioned to allow external input radiation to reach photodiodes and including material regions positioned for attenuating radiation in the substrate that is produced by photodiodes in the array. Alternatively at least one cross-talk blocking layer of material is disposed on the optical interface surface of the substrate to allow external input radiation to reach photodiodes and attenuate radiation in the substrate that is produced by photodiodes in the array. At least one cross-talk filter layer of material can be disposed in the substrate adjacent to the photodiode structures, including a material that absorbs radiation in the substrate that is produced by photodiodes in the array.Type: GrantFiled: December 31, 2014Date of Patent: July 23, 2019Assignee: Massachusetts Institute of TechnologyInventors: K. Alexander McIntosh, David C. Chapman, Joseph P. Donnelly, Douglas C. Oakley, Antonio Napoleone, Erik K. Duerr, Simon Verghese, Richard D. Younger
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Patent number: 10109671Abstract: There is provided an avalanche photodiode array that includes a plurality of avalanche photodiodes. Each avalanche photodiode in the array includes a stack of active photodiode materials. The stack of active photodiode materials includes a first electrical contact layer, a second electrical contact layer; an absorber material layer and an avalanche material layer each disposed between the first electrical contact layer and the second electrical contact layer; and an optical interface surface to the avalanche photodiode. The optical interface surface consists of an exposed surface of the first electrical contact layer, arranged for incident external radiation to directly enter the first electrical contact layer. Each avalanche photodiode stack of active photodiode materials is laterally isolated from the other avalanche photodiodes in the photodiode array.Type: GrantFiled: May 23, 2017Date of Patent: October 23, 2018Assignee: Massachusetts Institute of TechnologyInventors: Joseph P Donnelly, K Alexander McIntosh, Erik K Duerr, William D Goodhue, Robert J Bailey, Lisa A Wright
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Publication number: 20180040663Abstract: There is provided an avalanche photodiode array that includes a plurality of avalanche photodiodes. Each avalanche photodiode in the array includes a stack of active photodiode materials. The stack of active photodiode materials includes a first electrical contact layer, a second electrical contact layer; an absorber material layer and an avalanche material layer each disposed between the first electrical contact layer and the second electrical contact layer; and an optical interface surface to the avalanche photodiode. The optical interface surface consists of an exposed surface of the first electrical contact layer, arranged for incident external radiation to directly enter the first electrical contact layer. Each avalanche photodiode stack of active photodiode materials is laterally isolated from the other avalanche photodiodes in the photodiode array.Type: ApplicationFiled: May 23, 2017Publication date: February 8, 2018Applicant: Massachusetts Institute of TechnologyInventors: Joseph P. Donnelly, K. Alexander McIntosh, Erik K. Duerr, William D. Goodhue, Robert J. Bailey, Lisa A. Wright
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Publication number: 20160181458Abstract: An avalanche photodiode detector is provided with a substrate including an array of avalanche photodiodes. An optical interface surface of the substrate is arranged for accepting external input radiation. There is provided at least one cross-talk blocking layer of material including apertures positioned to allow external input radiation to reach photodiodes and including material regions positioned for attenuating radiation in the substrate that is produced by photodiodes in the array. Alternatively at least one cross-talk blocking layer of material is disposed on the optical interface surface of the substrate to allow external input radiation to reach photodiodes and attenuate radiation in the substrate that is produced by photodiodes in the array. At least one cross-talk filter layer of material can be disposed in the substrate adjacent to the photodiode structures, including a material that absorbs radiation in the substrate that is produced by photodiodes in the array.Type: ApplicationFiled: December 31, 2014Publication date: June 23, 2016Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGYInventors: K. Alexander McIntosh, David C. Chapman, Joseph P. Donnelly, Douglas C. Oakley, Antonio Napoleone, Erik K. Duerr, Simon Verghese, Richard D. Younger
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Publication number: 20110169117Abstract: An avalanche photodiode detector is provided with a substrate including an array of avalanche photodiodes. An optical interface surface of the substrate is arranged for accepting external input radiation. There is provided at least one cross-talk blocking layer of material including apertures positioned to allow external input radiation to reach photodiodes and including material regions positioned for attenuating radiation in the substrate that is produced by photodiodes in the array. Alternatively at least one cross-talk blocking layer of material is disposed on the optical interface surface of the substrate to allow external input radiation to reach photodiodes and attenuate radiation in the substrate that is produced by photodiodes in the array. At least one cross-talk filter layer of material can be disposed in the substrate adjacent to the photodiode structures, including a material that absorbs radiation in the substrate that is produced by photodiodes in the array.Type: ApplicationFiled: April 30, 2010Publication date: July 14, 2011Applicant: Massachusetts Institute of TechnologyInventors: K. Alexander McIntosh, David C. Chapman, Joseph P. Donnelly, Douglas C. Oakley, Antonio Napoleone, Erik K. Duerr, Simon Verghese, Richard D. Younger