Abstract: A method for improving the toughness of a CBN product made by a high temperature/high pressure (HP/HT) process commences by forming a blend of an oxygen getter and CBN product-forming feedstock. The blend is subjected to a CBN high temperature/high pressure (HP/HT) process for forming a CBN product. The amount of oxygen getter in the blend is sufficient to improve the toughness of the CBN product. The resulting CBN product desirably has an oxygen content of less than about 300 ppm. Oxygen getters include Al, Si, and Ti. The HP/HT process is conducted in the absence or presence of catalytic materials.

Abstract: A resin bond grinding element is composed of a resin bond matrix containing superabrasive particles. The superabrasive particles are an at least 1:1 volume mixture of tough and weak particles, wherein there is at least about 10% difference in toughness between the tough particles and the weak particles. The corresponding method involves grinding a workpiece with a resin bond grinding element composed of a resin bond matrix containing an at least 1:1 volume mixture of tough and weak superabrasive particles, wherein there is at least about 10% difference in toughness between the tough particles and the weak particles. The mixture of tough and weak superabrasive particles also can be used in metal bond and vitreous bond grinding elements.

Abstract: A method for improving the toughness of a CBN product made by a high temperature/high pressure (HP/HT) process commences by forming a blend of an oxygen getter and CBN product-forming feedstock. The blend is subjected to a CBN high temperature/high pressure (HP/HT) process for forming a CBN product. The amount of oxygen getter in the blend is sufficient to improve the toughness of the CBN product. The resulting CBN product desirably has an oxygen content of less than about 300 ppm. Oxygen getters include Al, Si, and Ti. The HP/HT process is conducted in the absence or presence of catalytic materials.

Abstract: The present invention is addressed to improving a blank for a wire drawing die formed from an annular cemented metal carbide support component having a lengthwise extent from an entrance end to an exit end and extending radially about a central longitudinal axis to define a cylindrical internal bore through the lengthwise extent, and a cylindrical sintered polycrystalline compact component received within the bore of the support component and bonded thereto at an interface surface extending a radial distance from and along the longitudinal axis from a wire drawing entrance end to a wire drawing exit end. The compact component is adapted to receive an aperture extending through its lengthwise extent about the central longitudinal axis and is configured with an entrance zone at the die entrance end which tapers inwardly therefrom to a reduction zone whereat a wire to be drawn through the aperture makes initial contact with the compact component, and thence to a bearing zone and an exit zone.

Abstract: The present invention is addressed to improving a blank for a wire drawing die formed from an annular cemented metal carbide support component having a lengthwise extent from an entrance end to an exit end and extending radially about a central longitudinal axis to define a cylindrical internal bore through the lengthwise extent, and a cylindrical sintered polycrystalline compact component received within the bore of the support component and bonded thereto at an interface surface extending a radial distance from and along the longitudinal axis from a wire drawing entrance end to a wire drawing exit end. The compact component is adapted to receive an aperture extending through its lengthwise extent about the central longitudinal axis and is configured with an entrance zone at the die entrance end which tapers inwardly therefrom to a reduction zone whereat a wire to be drawn through the aperture makes initial contact with the compact component, and thence to a bearing zone and an exit zone.

Abstract: A continuous diamond structure deposited by chemical vapor deposition is disclosed having at least two thermal conductivity diamond layers controlled by the diamond growth rate where one thermal conductivity diamond layer is grown at a high growth rate of at least one micron per hour for hot filament chemical vapor deposition and at least 2-3 microns per hour for microwave plasma assisted chemical vapor deposition, on a substrate such as molybdenum in a chemical vapor deposition chamber and at a substrate temperature that promotes the high growth rate, and the other thermal conductivity diamond layer is grown at a growth rate and substrate temperature lower than the high growth rate diamond layer. High growth rate and low growth rate diamond layers can be deposited in any sequence to obtain a continuous diamond structure that does not show distinguishable, separate, crystalline columnar layers, having improved thermal conductivity.

Abstract: A method is disclosed for producing continuous CVD diamond films with at least two controlled diamond thermal conductivity layers having improved thermal conductivity in the direction parallel to the diamond film plane to increasing the lateral heat spreading ability of the diamond film. Also, disclosed is a method to decrease the time to deposit high thermal conducting diamond by chemical vapor deposition.

Abstract: Temperature uniformity and control in apparatus for chemical vapor deposition of diamond is improved by contacting the rear of the substrate assembly, which may be a substrate or a holder containing substrates, with a thermal spreader, preferably of copper and preferably having heating means embedded therein or associated therewith. The thermal spreader contacts a thermal resistance unit, preferably of stainless steel, which in turn is in contact with a cooling element that preferably has coolant passages therein.