Abstract: A method for stripping material from a microelectronic workpiece is described. The method includes receiving a workpiece having a surface exposing a layer composed of silicon and organic material, and placing the workpiece in a wet clean chamber. In the wet clean chamber, the layer composed of silicon and organic material is removed from the workpiece by exposing the surface of the workpiece to a first stripping agent containing a sulfuric acid composition, and then optionally exposing the surface of the workpiece to a second stripping agent containing dilute hydrofluoric acid (dHF).

Abstract: The present invention provides treatment strategies that reduce contamination on wafer surfaces that are treated with acid chemistries. The strategies are suitable for use with a wide variety of wafers, including those including sensitive microelectronic features or precursors thereof. These strategies involve a combination of neutralizing and rinsing strategies that quickly and effectively remove residual acid and acid by-products from both the front side of workpiece(s) as well as from other processing chamber surfaces that can be causes of contamination.