Abstract: A polarization-multiplexed radiator system, preferably including one or more electron splitters, undulator networks, electron combiners, and/or optics, and preferably integrated into a light source system that can include one or more accelerator modules and/or radiator modules. A method of operation, preferably including receiving high-energy electrons, separating electrons, and/or generating optical outputs S330, and optionally including separating outputs, providing the optical outputs, and/or outputting electrons.

Abstract: An EUV photoresist composition includes paramagnetic particles that are adapted to block EUV radiation. The magnetic manipulation of the paramagnetic particles within a deposited layer of EUV photoresist can beneficially impact focus control and the achievable line width roughness during subsequent photolithographic processing. A spin-coating apparatus for dispensing the EUV photoresist composition onto a substrate includes a plurality of concentric electromagnets located beneath the substrate that influence the distribution of the paramagnetic particles in the photoresist layer.

Abstract: An EUV photoresist composition includes paramagnetic particles that are adapted to block EUV radiation. The magnetic manipulation of the paramagnetic particles within a deposited layer of EUV photoresist can beneficially impact focus control and the achievable line width roughness during subsequent photolithographic processing. A spin-coating apparatus for dispensing the EUV photoresist composition onto a substrate includes a plurality of concentric electromagnets located beneath the substrate that influence the distribution of the paramagnetic particles in the photoresist layer.

Abstract: At least one method, apparatus and system for providing capturing synchrotron radiation for a metrology tool, are disclosed. A beam using a first light emitting device is provided. The first light emitting device comprises a first electron path bend. A first synchrotron radiation is provided from the first electron path bend to a first metrology tool configured to perform a metrology inspection using the first synchrotron radiation.

Abstract: Method and apparatus for in-situ EUV collector cleaning utilizing a cryogenic process and a magnetic trap are disclosed. Embodiments include providing a light source collector including a reflective surface; applying a cooling agent to a surface of the collector for accelerating transformations of characteristics of contaminants on the reflective surface; applying a purging agent to the reflective surface for dislodging the transformed contaminants; and removing the dislodged contaminants to a collection pod remote from the reflective surface.

Abstract: At least one method, apparatus and system for providing a plurality of optical beams, such as EUV beams. A first electron beam is received. The first electron beam is converted into at least a second electron beam and a third electron beam. The second and third second and third electron beams to an undulator. Using the undulator for generating a plurality of output beams using the at least second and third electron beams. The output beams respectively comprises a plurality of optical beam components and a plurality of electron beam component. A first optical beam component of the plurality of optical beam components is provided to a first processing tool.

Abstract: Methods for receiving a high-energy EUV beam and distributing EUV sub-beams to photolithography scanners and the resulting device are disclosed. Embodiments include receiving a high-energy primary EUV beam at a primary splitting optical assembly; splitting the primary EUV beam into primary EUV sub-beams; reflecting the primary EUV sub-beams to beam-splitting optical arrays; splitting the primary EUV sub-beams into secondary EUV sub-beams; reflecting the secondary EUV sub-beams to EUV distribution optical arrays; and distributing simultaneously the secondary EUV sub-beams to scanners.

Abstract: At least one method, apparatus and system for providing capturing synchrotron radiation for a metrology tool, are disclosed. A beam using a first light emitting device is provided. The first light emitting device comprises a first electron path bend. A first synchrotron radiation is provided from the first electron path bend to a first metrology tool configured to perform a metrology inspection using the first synchrotron radiation.

Abstract: Methods for receiving a high-energy EUV beam and distributing EUV sub-beams to photolithography scanners and the resulting device are disclosed. Embodiments include receiving a high-energy primary EUV beam at a primary splitting optical assembly; splitting the primary EUV beam into primary EUV sub-beams; reflecting the primary EUV sub-beams to beam-splitting optical arrays; splitting the primary EUV sub-beams into secondary EUV sub-beams; reflecting the secondary EUV sub-beams to EUV distribution optical arrays; and distributing simultaneously the secondary EUV sub-beams to scanners.

Abstract: At least one method, apparatus and system for providing an extreme ultraviolet beam for processing semiconductor wafers are disclosed. A level of the EUV beam is monitored. A determination is made as to whether the level of the EUV beam is below a predetermined level. In response to determining that the level of the EUV beam is below the predetermined level, a determination is made as to whether the output of at least one of the first or second laser devices has decreased from an initial level. The output of the at least one of the first or second laser devices is increased in response to determining that the output of at least one of the first or second laser devices has decreased from an initial level.

Abstract: At least one method, apparatus and system for providing an extreme ultraviolet beam for processing semiconductor wafers are disclosed. A level of the EUV beam is monitored. A determination is made as to whether the level of the EUV beam is below a predetermined level. In response to determining that the level of the EUV beam is below the predetermined level, a determination is made as to whether the output of at least one of the first or second laser devices has decreased from an initial level. The output of the at least one of the first or second laser devices is increased in response to determining that the output of at least one of the first or second laser devices has decreased from an initial level.