Patents by Inventor Erik Scher

Erik Scher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240100477
    Abstract: Described herein are methods and systems for processing gas streams. The gas streams may comprise a methane-containing gas stream, such as an exhaust stream. The systems and methods of the present disclosure may process the methane-containing gas stream using one or more processing units including a biological filtration unit and a thermal oxidizer to generate an output stream which has a lower concentration of methane than the methane-containing gas stream.
    Type: Application
    Filed: August 17, 2023
    Publication date: March 28, 2024
    Inventors: Joshua A. Silverman, Erik Scher, Robert B. Jackson, Guido Radaelli
  • Publication number: 20230302405
    Abstract: Catalysts, catalytic materials, catalytic forms, methods for preparation the same, methods for using the same in catalytic combustion processes, and methods and systems for conducting such combustion processes are provided.
    Type: Application
    Filed: July 2, 2021
    Publication date: September 28, 2023
    Inventors: Guido RADAELLI, Luca PINAUDA, Erik SCHER
  • Publication number: 20220371983
    Abstract: Provided is a first process of producing an anhydride of an organic mono-acid comprising performing a transanhydridization reaction of an organic mono-acid and a thermally regenerable anhydride to produce the anhydride of the organic mono-acid and an acid of the thermally regenerable anhydride, wherein at least one of the organic mono-acid and thermally regenerable anhydride is provided by a preprocess that is integrated with the first process. An anhydride production system that is integrated with at least one preprocess, a wood acetylation process coupled to an acetic anhydride production process, a process of supplying an acetic acid reactant feed to a transanhydridization reaction unit, and an integrated wood acetylation and anhydride production system also are provided.
    Type: Application
    Filed: May 6, 2022
    Publication date: November 24, 2022
    Applicant: Hyconix, Inc.
    Inventors: Johnathan Gorke, Brian Hashiguchi, Michael Konnick, Jay Kouba, Erik Scher, Jeremy Patt, Mary Bjorklund
  • Publication number: 20220056620
    Abstract: The present disclosure relates to knits that can be used to make rip-resistant garments using an ultra-high molecular weight polyethylene (UHMWPE) fiber and a companion fiber such as a stretch fiber or a memory fiber. The UHMWPE fiber includes a monofilament or multiple microfilaments, each of the microfilaments has a denier of 5 or less.
    Type: Application
    Filed: April 6, 2021
    Publication date: February 24, 2022
    Inventors: Katherine Hague, Michael Zeppetelli, Zachary Homuth, Erik Scher
  • Patent number: 10332686
    Abstract: High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: June 25, 2019
    Assignee: Thin Film Electronics ASA
    Inventors: Arvind Kamath, Criswell Choi, Patrick Smith, Erik Scher, Jiang Li
  • Publication number: 20180155192
    Abstract: A method for generating hydrocarbon compounds containing at least two carbon atoms (C2+ compounds) comprises directing a natural gas feed stream from a non-Fischer Tropsch process and comprising methane and C2+ compounds to at least one separation unit to separate the methane from the C2+ compounds. The separated C2+ compounds are directed to a fractionation unit to separate the separated C2+ compounds into individual streams. The separated methane is directed to a synthesis gas (syngas) unit to partially oxidize the methane to hydrogen (H2) and carbon monoxide (CO), which are subsequently directed to a Fischer-Tropsch unit comprising a Fischer-Tropsch catalyst. In the Fischer-Tropsch unit, the hydrogen and carbon monoxide react to generate C2+ compounds in a Fischer-Tropsch process. The C2+ compounds are directed to the fractionation unit to separate the generated C2+ compounds into streams each comprising a subset of the generated C2+ compounds.
    Type: Application
    Filed: August 10, 2017
    Publication date: June 7, 2018
    Inventors: Rahul Iyer, Bipinkumar Patel, Erik Scher
  • Patent number: 9969660
    Abstract: The present disclosure provides natural gas and petrochemical processing systems including oxidative coupling of methane reactor systems that integrate process inputs and outputs to cooperatively utilize different inputs and outputs of the various systems in the production of higher hydrocarbons from natural gas and other hydrocarbon feedstocks.
    Type: Grant
    Filed: July 8, 2013
    Date of Patent: May 15, 2018
    Assignee: SILURIA TECHNOLOGIES, INC.
    Inventors: Rahul Iyer, Alex Tkachenko, Sam Weinberger, Erik Scher, Guido Radaelli, Hatem Harraz
  • Publication number: 20170098508
    Abstract: High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.
    Type: Application
    Filed: December 20, 2016
    Publication date: April 6, 2017
    Applicant: Thin Film Electronics ASA
    Inventors: Arvind KAMATH, Criswell CHOI, Patrick SMITH, Erik SCHER, Jiang LI
  • Patent number: 9580367
    Abstract: The present disclosure provides natural gas and petrochemical processing systems including oxidative coupling of methane reactor systems that integrate process inputs and outputs to cooperatively utilize different inputs and outputs of the various systems in the production of higher hydrocarbons from natural gas and other hydrocarbon feedstocks.
    Type: Grant
    Filed: July 8, 2013
    Date of Patent: February 28, 2017
    Assignee: SILURIA TECHNOLOGIES, INC.
    Inventors: Rahul Iyer, Alex Tkachenko, Sam Weinberger, Erik Scher, Guido Radaelli, Hatem Harraz, Fabio R. Zurcher, Joel Gamoras, Dmitry Karshtedt, Greg Nyce
  • Patent number: 9552924
    Abstract: High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: January 24, 2017
    Assignee: Thin Film Electronics ASA
    Inventors: Arvind Kamath, Criswell Choi, Patrick Smith, Erik Scher, Jiang Li
  • Publication number: 20150322350
    Abstract: A method for generating hydrocarbon compounds containing at least two carbon atoms (C2+ compounds) comprises directing a natural gas feed stream from a non-Fischer Tropsch process and comprising methane and C2+ compounds to at least one separation unit to separate the methane from the C2+ compounds. The separated C2+ compounds are directed to a fractionation unit to separate the separated C2+ compounds into individual streams. The separated methane is directed to a synthesis gas (syngas) unit to partially oxidize the methane to hydrogen (H2) and carbon monoxide (CO), which are subsequently directed to a Fischer-Tropsch unit comprising a Fischer-Tropsch catalyst. In the Fischer-Tropsch unit, the hydrogen and carbon monoxide react to generate C2+ compounds in a Fischer-Tropsch process. The C2+ compounds are directed to the fractionation unit to separate the generated C2+ compounds into streams each comprising a subset of the generated C2+ compounds.
    Type: Application
    Filed: May 8, 2015
    Publication date: November 12, 2015
    Inventors: Rahul Iyer, Bipinkumar Patel, Erik Scher
  • Patent number: 9045653
    Abstract: Embodiments relate to printing features from an ink containing a material precursor. In some embodiments, the material includes an electrically active material, such as a semiconductor, a metal, or a combination thereof. In another embodiment, the material includes a dielectric. The embodiments provide improved printing process conditions that allow for more precise control of the shape, profile and dimensions of a printed line or other feature. The composition(s) and/or method(s) improve control of pinning by increasing the viscosity and mass loading of components in the ink. An exemplary method thus includes printing an ink comprising a material precursor and a solvent in a pattern on the substrate; precipitating the precursor in the pattern to form a pinning line; substantially evaporating the solvent to form a feature of the material precursor defined by the pinning line; and converting the material precursor to the patterned material.
    Type: Grant
    Filed: August 23, 2013
    Date of Patent: June 2, 2015
    Assignee: Thin Film Electronics ASA
    Inventors: Erik Scher, Steven Molesa, Joerg Rockenberger, Arvind Kamath, Ikuo Mori, Wenzhuo Guo, Dmitry Karshtedt, Vladimir K. Dioumaev
  • Publication number: 20150146345
    Abstract: High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.
    Type: Application
    Filed: February 3, 2015
    Publication date: May 28, 2015
    Applicant: Thin Film Electronics ASA
    Inventors: Arvind KAMATH, Criswell CHOI, Patrick SMITH, Erik SCHER, Jiang LI
  • Patent number: 8973231
    Abstract: High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition are disclosed. The method generally includes the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. The methods provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.
    Type: Grant
    Filed: April 23, 2013
    Date of Patent: March 10, 2015
    Assignee: Thin Film Electronics ASA
    Inventors: Arvind Kamath, Criswell Choi, Patrick Smith, Erik Scher, Jiang Li
  • Patent number: 8921256
    Abstract: Metal oxide catalysts comprising various dopants are provided. The catalysts are useful as heterogenous catalysts in a variety of catalytic reactions, for example, the oxidative coupling of methane to C2 hydrocarbons such as ethane and ethylene. Related methods for use and manufacture of the same are also disclosed.
    Type: Grant
    Filed: May 24, 2012
    Date of Patent: December 30, 2014
    Assignee: Siluria Technologies, Inc.
    Inventors: Joel M. Cizeron, Erik Scher, Fabio R. Zurcher, Wayne P. Schammel, Greg Nyce, Anja Rumplecker, Jarod McCormick, Marian Alcid, Joel Gamoras, Daniel Rosenberg, Erik-Jan Ras
  • Patent number: 8846507
    Abstract: Compositions and methods for controlled polymerization and/or oligomerization of hydrosilanes compounds including those of the general formulae SinH2n and SinH2n+2 as well as alkyl- and arylsilanes, to produce soluble silicon polymers as a precursor to silicon films having low carbon content.
    Type: Grant
    Filed: May 17, 2013
    Date of Patent: September 30, 2014
    Assignee: Thin Film Electronics ASA
    Inventors: Dmitry Karshtedt, Joerg Rockenberger, Fabio Zurcher, Brent Ridley, Erik Scher
  • Patent number: 8822301
    Abstract: The present invention relates to electrically active devices (e.g., capacitors, transistors, diodes, floating gate memory cells, etc.) having dielectric, conductor, and/or semiconductor layers with smooth and/or dome-shaped profiles and methods of forming such devices by depositing or printing (e.g., inkjet printing) an ink composition that includes a semiconductor, metal, or dielectric precursor. The smooth and/or dome-shaped cross-sectional profile allows for smooth topological transitions without sharp steps, preventing feature discontinuities during deposition and allowing for more complete step coverage of subsequently deposited structures. The inventive profile allows for both the uniform growth of oxide layers by thermal oxidation, and substantially uniform etching rates of the structures. Such oxide layers may have a uniform thickness and provide substantially complete coverage of the underlying electrically active feature.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: September 2, 2014
    Assignee: Thin Film Electronics ASA
    Inventors: Arvind Kamath, Erik Scher, Patrick Smith, Aditi Chandra, Steven Molesa
  • Publication number: 20140018589
    Abstract: The present disclosure provides natural gas and petrochemical processing systems including oxidative coupling of methane reactor systems that integrate process inputs and outputs to cooperatively utilize different inputs and outputs of the various systems in the production of higher hydrocarbons from natural gas and other hydrocarbon feedstocks.
    Type: Application
    Filed: July 8, 2013
    Publication date: January 16, 2014
    Applicant: Siluria Technologies, Inc.
    Inventors: Rahul Iyer, Alex Tkachenko, Sam Weinberger, Erik Scher, Guido Radaelli, Hatem Harraz
  • Publication number: 20140012053
    Abstract: Natural gas and petrochemical processing systems including oxidative coupling of methane reactor systems that integrate process inputs and outputs to cooperatively utilize different inputs and outputs of the various systems in the production of higher hydrocarbons from natural gas and other hydrocarbon feedstocks.
    Type: Application
    Filed: July 8, 2013
    Publication date: January 9, 2014
    Applicant: Siluria Technologies, Inc.
    Inventors: Rahul Iyer, Alex Takachenko, Sam Weinberger, Erik Scher
  • Patent number: 8617992
    Abstract: Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.
    Type: Grant
    Filed: March 22, 2012
    Date of Patent: December 31, 2013
    Assignee: Kovio, Inc.
    Inventors: Aditi Chandra, Arvind Kamath, James Montague Cleeves, Joerg Rockenberger, Mao Takashima, Erik Scher