Abstract: The method for doping a semiconductor includes the following steps in the following order: separation layer deposition step, in which a separation layer is deposited on the surface of a substrate, a mixture material source layer deposition step, in which a mixture material source layer including a mixture material is deposited on the separation layer, the mixture material of the mixture material source layer including a dopant substance, and annealing the substrate, the separation layer, and the mixture material source layer in an annealing step to arrange diffusion of dopant substance from the mixture material source layer to the substrate and to the separation layer.

Abstract: A material comprising a first layer of matrix material doped with a dopant metal is disclosed. The matrix material comprises a rare-earth metal, oxygen, and one or both of sulfur and selenium. In the first layer of matrix material doped with the dopant metal, the rare-earth metal has an oxidation state of +3 and the dopant metal has an oxidation state of +2. Further is disclosed a method for fabricating the material and a device comprising the material.