Abstract: An incisionless fully endoscopic method of reducing the capacity of the stomach is provided to surgically treat obesity. The method is directed to endoluminal tissue approximation of a portion of the stomach, including at least a portion of the greater curvature thereof. The method includes a pattern of stitching in which a portion of the stomach is closed off. One stitching pattern causes the lateral portion of the stomach to be drawn to reduce the usable volume of the stomach while maintaining a pathway from the esophagus to the pylorus. As the stitching pattern advances, the fundus is automatically drawn downward so that it may be endoscopically approached for stitching in a facilitated manner According to another aspect of the invention, another stitching pattern extends from the antrum to the fundus between the anterior and posterior portions of the stomach.

Abstract: An incisionless fully endoscopic method of reducing the capacity of the stomach is provided to surgically treat obesity. The method is directed to endoluminal tissue approximation of a portion of the stomach, including at least a portion of the greater curvature thereof. The method includes a pattern of stitching in which a portion of the stomach is closed off. One stitching pattern causes the lateral portion of the stomach to be drawn to reduce the usable volume of the stomach while maintaining a pathway from the esophagus to the pylorus. As the stitching pattern advances, the fundus is automatically drawn downward so that it may be endoscopically approached for stitching in a facilitated manner. According to another aspect of the invention, another stitching pattern extends from the antrum to the fundus between the anterior and posterior portions of the stomach.

Abstract: A method is provided comprising: detecting a connection between an electronic device and a battery charger; transmitting to the battery charger a first request for at least one of a first voltage level and a first current level; receiving from the battery charger a signal; and charging a battery of the electronic device with the signal.

Abstract: A method is provided comprising: detecting a connection between an electronic device and a battery charger; transmitting to the battery charger a first request for at least one of a first voltage level and a first current level; receiving from the battery charger a signal; and charging a battery of the electronic device with the signal.

Abstract: An incisionless fully endoscopic method of reducing the capacity of the stomach is provided to surgically treat obesity. The method is directed to endoluminal tissue approximation of a portion of the stomach, including at least a portion of the greater curvature thereof. The method includes a pattern of stitching in which a portion of the stomach is closed off. One stitching pattern causes the lateral portion of the stomach to be drawn to reduce the usable volume of the stomach while maintaining a pathway from the esophagus to the pylorus. As the stitching pattern advances, the fundus is automatically drawn downward so that it may be endoscopically approached for stitching in a facilitated manner. According to another aspect of the invention, another stitching pattern extends from the antrum to the fundus between the anterior and posterior portions of the stomach.

Abstract: A method is provided comprising: detecting a connection between an electronic device and a battery charger; transmitting to the battery charger a first request for at least one of a first voltage level and a first current level; receiving from the battery charger a signal; and charging a battery of the electronic device with the signal.

Abstract: A method is provided comprising: detecting a connection between an electronic device and a battery charger; transmitting to the battery charger a first request for at least one of a first voltage level and a first current level; receiving from the battery charger a signal; and charging a battery of the electronic device with the signal.

Abstract: An electrically conductive interconnect is provided through an opening in a dielectric layer, electrically connecting two conductive layers. In one embodiment, the interconnect is formed by ruthenium entirely filling the opening in the dielectric layer. In another embodiment, an adhesion layer of titanium is provided in the opening prior to providing the ruthenium. In using this approach, an aspect ratio (i.e., the ratio of the length of the interconnect to the width thereof) of 20:1 or greater is achievable.

Abstract: A method is provided comprising: detecting a connection between an electronic device and a battery charger; transmitting to the battery charger a first request for at least one of a first voltage level and a first current level; receiving from the battery charger a signal; and charging a battery of the electronic device with the signal.

Abstract: An incisionless fully endoscopic method of reducing the capacity of the stomach is provided to surgically treat obesity. The method is directed to endoluminal tissue approximation of a portion of the stomach, including at least a portion of the greater curvature thereof. The method includes a pattern of stitching in which a portion of the stomach is closed off. One stitching pattern causes the lateral portion of the stomach to be drawn to reduce the usable volume of the stomach while maintaining a pathway from the esophagus to the pylorus. As the stitching pattern advances, the fundus is automatically drawn downward so that it may be endoscopically approached for stitching in a facilitated manner. According to another aspect of the invention, another stitching pattern extends from the antrum to the fundus between the anterior and posterior portions of the stomach.

Abstract: During semiconductor fabrication homogeneous gap-filling is achieved by depositing a thin dielectric layer into the gap, post deposition curing, and then repeating deposition and post deposition curing until gap-filling is completed. Embodiments include depositing a layer of low deposition temperature gap-fill dielectric into a high aspect ratio opening, such as a shallow trench or a gap between closely spaced apart gate electrode structures, as at a thickness of about 10 ? to about 500 ?, curing after deposition, as by UV radiation or by heating at a temperature of about 400° C. to about 1000° C., depositing another layer of low deposition temperature gap-filled dielectric, and curing after deposition. Embodiments include separately depositing and separately curing multiple layers.

Abstract: A method for forming a single damascene and/or dual damascene, contact and interconnect structure, comprising: performing front end processing, depositing copper including a copper barrier, annealing the copper in at least 90% N2 with less than 10% H2, performing planarization, performing in-situ low-H NH3 plasma treatment and low Si—H SiN etch stop layer deposition, and performing remaining back end processing.

Abstract: Data retention in flash memory devices, such as mirrorbit devices, is improved by reducing the generation and/or diffusion of hydrogen ions during back end processing, such as annealing inlaid Cu. Embodiments include annealing inlaid Cu in an N2 atmosphere containing low H2 or no H2, and at temperatures less than 200° C., e.g., 100° C. to 150° C.

Abstract: During semiconductor fabrication homogeneous gap-filling is achieved by depositing a thin dielectric layer into the gap, post deposition curing, and then repeating deposition and post deposition curing until gap-filling is completed. Embodiments include depositing a layer of low deposition temperature gap-fill dielectric into a high aspect ratio opening, such as a shallow trench or a gap between closely spaced apart gate electrode structures, as at a thickness of about 10 ? to about 500 ?, curing after deposition, as by UV radiation or by heating at a temperature of about 400° C. to about 1000° C., depositing another layer of low deposition temperature gap-filled dielectric, and curing after deposition. Embodiments include separately depositing and separately curing multiple layers.

Abstract: A modular seat frame for a school bus seat includes riser assemblies for supporting the seat fabricated from a moldable material reinforced locally by attachment and reinforcement members.

Abstract: An electrically conductive interconnect is provided through an opening in a dielectric layer, electrically connecting two conductive layers. In one embodiment, the interconnect is formed by ruthenium entirely filling the opening in the dielectric layer. In another embodiment, an adhesion layer of titanium is provided in the opening prior to providing the ruthenium. In using this approach, an aspect ratio (i.e., the ratio of the length of the interconnect to the width thereof) of 20:1 or greater is achievable.

Abstract: Cu interconnects are formed with composite capping layers for reduced electromigration, improved adhesion between Cu and the capping layer, and reduced charge loss in associated non-volatile transistors. Embodiments include depositing a first relatively thin silicon nitride layer having a relatively high concentration of Si—H bonds on the upper surface of a layer of Cu for improved adhesion and reduced electromigration, and depositing a second relatively thick silicon nitride layer having a relatively low concentration of Si—H bonds on the first silicon nitride layer for reduced charge loss.

Abstract: Data retention in flash memory devices, such as mirrorbit devices, is improved by reducing the generation and/or diffusion of hydrogen ions during back end processing, such as annealing inlaid Cu. Embodiments include annealing inlaid Cu in an N2 atmosphere containing low H2 or no H2, and at temperatures less than 200° C., e.g., 100° C. to 150° C.

Abstract: Gap filling between features which are closely spaced is significantly improved by initially depositing a thin conformal layer followed by depositing a layer of gap filling dielectric material. Embodiments include depositing a thin conformal layer of silicon nitride or silicon oxide, as by atomic layer deposition or pulsed layer deposition, into the gap between adjacent gate electrode structures such that it flows into undercut regions of dielectric spacers on side surfaces of the gate electrode structures, and then depositing a layer of BPSG or P-HDP oxide on the thin conformal layer into the gap. Embodiments further include depositing the layers at a temperature less than 430° C., as by depositing a P-HDP oxide after depositing the conformal liner when the gate electrode structures include a layer of nickel silicide.

Abstract: The invention involves a seat system with a movable and immovable portions that may be maintained and still operate during transients as required under the federal regulations. There is a quick release serviceability latch for a school bus passenger seat with integrated restraints. The inner and outer seat backs must be quickly detached from one another to facilitate repair or replacement of damaged seat components. A movable plunger is rigidly attached to the inner seat back frame. Another bracket with hole to accept the plunger is rigidly attached to the back pan of the outer back. The attachment of inner to outer seat backs must be strong enough so that they can't be pulled apart by hand but at the same time be detachable in the event of a crash. A tab that engages the plunger separates upon a rapid deceleration event.