Patents by Inventor Erika HANSEN
Erika HANSEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11959169Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.Type: GrantFiled: September 30, 2022Date of Patent: April 16, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Kartik Shah, Hansel Lo, Tobin Kaufman-Osborn, Rene George, Lara Hawrylchak, Erika Hansen
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Publication number: 20230133402Abstract: The present disclosure relates to a gas injection module for a process chamber. The process chamber includes a chamber body, a rotatable substrate support disposed inside a process volume of the chamber body, the substrate support configured to have a rotational spin rate; an inlet port formed in the chamber body, and an injection module coupled to the inlet port. The injection module includes a body, one or more gas inlets coupled to the body, and a plurality of nozzles formed in a supply face of the body, the supply face configured to face inside the chamber body, and gas exiting from the injection module is configured to have a flow rate; the process chamber also includes a controller configured to operate the process chamber such that the ratio of the flow rate to the rotational spin rate is between about 1/3 and 3.Type: ApplicationFiled: October 18, 2022Publication date: May 4, 2023Inventors: Christopher S. OLSEN, Kartik Bhupendra SHAH, Chaitanya Anjaneyalu PRASAD, Vishwas Kumar PANDEY, AnilKumar BODEPUDI, Erika HANSEN
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Publication number: 20230028054Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.Type: ApplicationFiled: September 30, 2022Publication date: January 26, 2023Inventors: Eric Kihara SHONO, Vishwas Kumar PANDEY, Christopher S. OLSEN, Kartik SHAH, Hansel LO, Tobin KAUFMAN-OSBORN, Rene GEORGE, Lara HAWRYLCHAK, Erika HANSEN
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Publication number: 20220411927Abstract: Embodiments described herein generally relate to a processing system and a method of delivering a reactant gas. The processing system includes a substrate support system, an injection cone, and an intake. The injection cone includes a linear rudder. The linear rudder is disposed such that the flow of reactant gas through the injection cone results in film growth on a specific portion of a substrate. The method includes flowing the gas through the injection cone and delivering the gas onto the substrate below. The localization of the reactant gas, allows for film growth on a specific portion of the substrate.Type: ApplicationFiled: September 9, 2020Publication date: December 29, 2022Inventors: Vishwas Kumar PANDEY, Christopher OLSEN, Rene GEORGE, Eric SHONO, Lara HAWRYLCHAK, Erika HANSEN, Tobin KAUFMAN-OSBORN, Hansel LO, Kartik SHAH
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Patent number: 11486038Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions do not intersect a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.Type: GrantFiled: January 29, 2020Date of Patent: November 1, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Kartik Shah, Hansel Lo, Tobin Kaufman-Osborn, Rene George, Lara Hawrylchak, Erika Hansen
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Publication number: 20220165547Abstract: Provided herein is a gas source comprising a flow conduit having an interior volume and an open end, a remote plasma source fluidly coupled to the flow conduit, a secondary gas source extending inwardly of the interior volume of the flow conduit, the secondary gas source including at least one gas port therein positioned to flow a secondary gas inwardly of the interior volume of the flow conduit.Type: ApplicationFiled: November 24, 2020Publication date: May 26, 2022Inventors: Vishwas Kumar PANDEY, Eric Kihara SHONO, Christopher S. OLSEN, Tobin KAUFMAN-OSBORN, Erika HANSEN, Rene GEORGE, Lara HAWRYLCHAK, Hansel LO, Kartik Bhupendra SHAH
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Patent number: 11322347Abstract: Embodiments described herein generally relate to conformal oxidation processes for flash memory devices. In conventional oxidation processes for gate structures, growth rates have become too fast, ultimately creating non-conformal films. To create a preferred growth rate for SiO2 on SiNx films, embodiments in this disclosure use a thermal combustion of a ternary mixture of H2+O2+N2O to gain SiO2 out of Si containing compounds. Using this mixture provides a lower growth in comparison with using only H2 and O2, resulting in a lower sticking coefficient. The lower sticking coefficient allows an optimal amount of atoms to reach the bottom of the gate, improving the conformality in 3D NAND SiO2 oxidation layers, specifically for ONO replacement tunneling gate formation.Type: GrantFiled: October 22, 2019Date of Patent: May 3, 2022Assignee: Applied Materials, Inc.Inventors: Johanes F. Swenberg, Taewan Kim, Christopher S. Olsen, Erika Hansen
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Patent number: 11081340Abstract: Methods for conformal radical oxidation of structures are provided. The method comprises positioning a substrate in a processing region of a processing chamber. The method further comprises flowing hydrogen gas into a precursor activator at a first flow rate, wherein the precursor activator is fluidly coupled with the processing region. The method further comprises flowing oxygen gas into the precursor activator at a second flow rate. The method further comprises flowing argon gas into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the hydrogen gas, oxygen gas, and argon gas. The method further comprises flowing the plasma into the processing region. The method further comprises exposing the substrate to the plasma to form an oxide film on the substrate, wherein a growth rate of the oxide film is controlled by adjusting the third flow rate.Type: GrantFiled: April 15, 2020Date of Patent: August 3, 2021Assignee: Applied Materials, Inc.Inventors: Hansel Lo, Christopher S. Olsen, Eric Kihara Shono, Johanes S. Swenberg, Erika Hansen, Taewan Kim, Lara Hawrylchak
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Publication number: 20200251331Abstract: Methods for conformal radical oxidation of structures are provided. The method comprises positioning a substrate in a processing region of a processing chamber. The method further comprises flowing hydrogen gas into a precursor activator at a first flow rate, wherein the precursor activator is fluidly coupled with the processing region. The method further comprises flowing oxygen gas into the precursor activator at a second flow rate. The method further comprises flowing argon gas into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the hydrogen gas, oxygen gas, and argon gas. The method further comprises flowing the plasma into the processing region. The method further comprises exposing the substrate to the plasma to form an oxide film on the substrate, wherein a growth rate of the oxide film is controlled by adjusting the third flow rate.Type: ApplicationFiled: April 15, 2020Publication date: August 6, 2020Inventors: Hansel LO, Christopher S. OLSEN, Eric Kihara SHONO, Johanes S. SWENBERG, Erika HANSEN, Taewan KIM, Lara HAWRYLCHAK
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Publication number: 20200240014Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions do not intersect a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.Type: ApplicationFiled: January 29, 2020Publication date: July 30, 2020Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Kartik Shah, Hansel Lo, Tobin Kaufman-Osborn, Rene George, Lara Hawrylchak, Erika Hansen
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Publication number: 20200194251Abstract: Embodiments described herein generally relate to conformal oxidation processes for flash memory devices. In conventional oxidation processes for gate structures, growth rates have become too fast, ultimately creating non-conformal films. To create a preferred growth rate for SiO2 on SiNx films, embodiments in this disclosure use a thermal combustion of a ternary mixture of H2+O2+N2O to gain SiO2 out of Si containing compounds. Using this mixture provides a lower growth in comparison with using only H2 and O2, resulting in a lower sticking coefficient. The lower sticking coefficient allows an optimal amount of atoms to reach the bottom of the gate, improving the conformality in 3D NAND SiO2 oxidation layers, specifically for ONO replacement tunneling gate formation.Type: ApplicationFiled: October 22, 2019Publication date: June 18, 2020Inventors: Johanes F. SWENBERG, Taewan KIM, Christopher S. OLSEN, Erika HANSEN
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Patent number: 10636650Abstract: Methods for conformal radical oxidation of structures are provided. In one implementation, the method comprises flowing hydrogen into a processing chamber at a first flow rate, wherein the processing chamber has a substrate positioned therein. The method further comprises flowing oxygen into a precursor activator at a second flow rate. The method further comprises flowing argon into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the oxygen and argon. The method further comprises flowing the plasma into the processing chamber, wherein the plasma mixes with the hydrogen gas to create an activated processing gas. The method further comprises exposing the substrate to the activated gas to form an oxide film on the substrate. A growth rate of the oxide film is controlled by adjusting the third flow rate.Type: GrantFiled: December 20, 2018Date of Patent: April 28, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Hansel Lo, Christopher S. Olsen, Eric Kihara Shono, Johanes S. Swenberg, Erika Hansen, Taewan Kim, Lara Hawrylchak
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Publication number: 20190221427Abstract: Methods for conformal radical oxidation of structures are provided. In one implementation, the method comprises flowing hydrogen into a processing chamber at a first flow rate, wherein the processing chamber has a substrate positioned therein. The method further comprises flowing oxygen into a precursor activator at a second flow rate. The method further comprises flowing argon into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the oxygen and argon. The method further comprises flowing the plasma into the processing chamber, wherein the plasma mixes with the hydrogen gas to create an activated processing gas. The method further comprises exposing the substrate to the activated gas to form an oxide film on the substrate. A growth rate of the oxide film is controlled by adjusting the third flow rate.Type: ApplicationFiled: December 20, 2018Publication date: July 18, 2019Inventors: Hansel LO, Christopher S. OLSEN, Eric Kihara SHONO, Johanes S. SWENBERG, Erika HANSEN, Taewan KIM, Lara HAWRYLCHAK