Abstract: Methods, systems, and devices for persistent health monitoring for volatile memory devices are described. A memory device may determine that an operating condition associated with an array of memory cells on the device, such as a temperature, current, voltage, or other metric of health status is outside of a range associated with a risk of device degradation. The memory device may monitor a duration over which the operating condition is outside of the range, and may determine whether the duration satisfies a threshold. In some cases, the memory device may store an indication of when (e.g., each time) the duration satisfied the threshold. The memory device may store the one or more indications in one or more non-volatile storage elements, such as fuses, which may enable the memory device to maintain a persistent indication of a cumulative duration over which the memory device is operated with operating conditions outside of the range.

Abstract: Methods, systems, and devices for persistent health monitoring for volatile memory devices are described. A memory device may determine that an operating condition associated with an array of memory cells on the device, such as a temperature, current, voltage, or other metric of health status is outside of a range associated with a risk of device degradation. The memory device may monitor a duration over which the operating condition is outside of the range, and may determine whether the duration satisfies a threshold. In some cases, the memory device may store an indication of when (e.g., each time) the duration satisfied the threshold. The memory device may store the one or more indications in one or more non-volatile storage elements, such as fuses, which may enable the memory device to maintain a persistent indication of a cumulative duration over which the memory device is operated with operating conditions outside of the range.

Abstract: Methods, systems, and devices for a memory error indicator related to high-reliability applications are described. A memory device may perform error detection procedures to monitor trends in the quantity of bit errors as an indication of the health of the memory device. A memory device may perform error detection procedures concurrently with refresh procedures to detect a quantity of errors (e.g., in a memory array) without degrading the performance of the device or the memory array. The memory device may compare a quantity of errors detected (e.g., in the memory array) with one or more previously detected quantities of errors to determine one or more differences in the quantities of errors. The memory device may generate an error metric based on the differences, and may determine whether the error metric satisfies a threshold. The memory device may output a status indicator (e.g., to a host device) based on whether the error metric satisfies the threshold.

Abstract: Methods, systems, and devices for a memory error indicator related to high-reliability applications are described. A memory device may perform error detection procedures to monitor trends in the quantity of bit errors as an indication of the health of the memory device. A memory device may perform error detection procedures concurrently with refresh procedures to detect a quantity of errors (e.g., in a memory array) without degrading the performance of the device or the memory array. The memory device may compare a quantity of errors detected (e.g., in the memory array) with one or more previously detected quantities of errors to determine one or more differences in the quantities of errors. The memory device may generate an error metric based on the differences, and may determine whether the error metric satisfies a threshold. The memory device may output a status indicator (e.g., to a host device) based on whether the error metric satisfies the threshold.

Abstract: Methods, systems, and devices for a memory error indicator related to high-reliability applications are described. A memory device may perform error detection procedures to monitor trends in the quantity of bit errors as an indication of the health of the memory device. A memory device may perform error detection procedures concurrently with refresh procedures to detect a quantity of errors (e.g., in a memory array) without degrading the performance of the device or the memory array. The memory device may compare a quantity of errors detected (e.g., in the memory array) with one or more previously detected quantities of errors to determine one or more differences in the quantities of errors. The memory device may generate an error metric based on the differences, and may determine whether the error metric satisfies a threshold. The memory device may output a status indicator (e.g., to a host device) based on whether the error metric satisfies the threshold.

Abstract: Methods, systems, and devices for a memory error indicator related to high-reliability applications are described. A memory device may perform error detection procedures to monitor trends in the quantity of bit errors as an indication of the health of the memory device. A memory device may perform error detection procedures concurrently with refresh procedures to detect a quantity of errors (e.g., in a memory array) without degrading the performance of the device or the memory array. The memory device may compare a quantity of errors detected (e.g., in the memory array) with one or more previously detected quantities of errors to determine one or more differences in the quantities of errors. The memory device may generate an error metric based on the differences, and may determine whether the error metric satisfies a threshold. The memory device may output a status indicator (e.g., to a host device) based on whether the error metric satisfies the threshold.

Abstract: Methods, systems, and devices for persistent health monitoring for volatile memory devices are described. A memory device may determine that an operating condition associated with an array of memory cells on the device, such as a temperature, current, voltage, or other metric of health status is outside of a range associated with a risk of device degradation. The memory device may monitor a duration over which the operating condition is outside of the range, and may determine whether the duration satisfies a threshold. In some cases, the memory device may store an indication of when (e.g., each time) the duration satisfied the threshold. The memory device may store the one or more indications in one or more non-volatile storage elements, such as fuses, which may enable the memory device to maintain a persistent indication of a cumulative duration over which the memory device is operated with operating conditions outside of the range.