Patents by Inventor Eriko Mizuno

Eriko Mizuno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ambipolar organic thin-film field-effect transistor and making method
    Patent number: 7507613
    Abstract: In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.
    Type: Grant
    Filed: August 1, 2007
    Date of Patent: March 24, 2009
    Assignees: Osaka University, Shin-Etsu Chemical Co., Ltd.
    Inventors: Tomoji Kawai, Masateru Taniguchi, Eriko Mizuno, Ikuo Fukui
  • Ambipolar organic thin-film field-effect transistor and making method
    Publication number: 20070281412
    Abstract: In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.
    Type: Application
    Filed: August 1, 2007
    Publication date: December 6, 2007
    Inventors: Tomoji Kawai, Masateru Taniguchi, Eriko Mizuno, Ikuo Fukui
  • Ambipolar organic thin-film field-effect transistor and making method
    Patent number: 7265380
    Abstract: In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.
    Type: Grant
    Filed: March 23, 2006
    Date of Patent: September 4, 2007
    Assignees: Osaka University, Shin-Etsu Chemical Co., Ltd.
    Inventors: Tomoji Kawai, Masateru Taniguchi, Eriko Mizuno, Ikuo Fukui
  • Ambipolar organic thin-film field-effect transistor and making method
    Publication number: 20060214162
    Abstract: In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.
    Type: Application
    Filed: March 23, 2006
    Publication date: September 28, 2006
    Inventors: Tomoji Kawai, Masateru Taniguchi, Eriko Mizuno, Ikuo Fukui