Abstract: Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing materials as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.

Abstract: A method of making an achromatic gradient index singlet lens comprising utilizing a gradient index material with a curved front surface in which light does not follow a straight line as it travels through the material and wherein different color rays traverse different curved paths, utilizing the natural dispersion of the curved front surface as a strong positive lens, and developing a weakly diverging GRIN distribution within the lens to balance the chromatic aberrations of the curved front surface.

Abstract: A method and system is provided for performing high-resolution image assembly regardless of observed scene content. An imaging system, including a focal plane array and lenslet array can be calibrated to account for subimage shifts. A calibration module can determine the subimage shifts by calculating an average point source position reference point coordinates for each of the subimages, and then determining the difference between the average point source position and the reference point coordinates for each subimage. The imaging system can then be calibrated utilizing the subimage shifts for each of the plurality of subimages. Finally, an assembly module can perform a high-resolution image assembly with the calibrated imaging system.

Abstract: A method of making an achromatic gradient index singlet lens comprising utilizing a gradient index material with a curved front surface in which light does not follow a straight line as it travels through the material and wherein different color rays traverse different curved paths, utilizing the natural dispersion of the curved front surface as a strong positive lens, and developing a weakly diverging GRIN distribution within the lens to balance the chromatic aberrations of the curved front surface.

Abstract: Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing materials as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.

Abstract: A method and system is provided for performing high-resolution image assembly regardless of observed scene content. An imaging system, including a focal plane array and lenslet array can be calibrated to account for subimage shifts. A calibration module can determine the subimage shifts by calculating an average point source position reference point coordinates for each of the subimages, and then determining the difference between the average point source position and the reference point coordinates for each subimage. The imaging system can then be calibrated utilizing the subimage shifts for each of the plurality of subimages. Finally, an assembly module can perform a high-resolution image assembly with the calibrated imaging system.

Abstract: Nano-particles are provided with control circuitry to form a programmable mask. The optical characteristics of the nano-particles change to provide patterned light. Such patterned light can be used for example to expose a photoresist on a semiconductor wafer for photolithography.

Abstract: Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing materials as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.

Abstract: Semiconductor nano-particles, due to their specific physical properties, can be used as reversible photo-bleachable materials for a wide spectrum, from far infrared to deep UV. Applications include, reversible contrast enhancement layer (R-CEL) in optical lithography, lithography mask inspection and writing and optical storage technologies.

Abstract: Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing materials as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.

Abstract: Semiconductor nano-particles, due to their specific physical properties, can be used as reversible photo-bleachable materials for a wide spectrum, from far infrared to deep UV. Applications include, reversible contrast enhancement layer (R-CEL) in optical lithography, lithography mask inspection and writing and optical storage technologies.

Abstract: Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing materials as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.

Abstract: Nano-particles are provided with control circuitry to form a programmable mask. The optical characteristics of the nano-particles change to provide patterned light. Such patterned light can be used for example to expose a photoresist on a semiconductor wafer for photolithography.

Abstract: Semiconductor nano-particles, due to their specific physical properties, can be used as reversible photo-bleachable materials for a wide spectrum, from far infrared to deep UV. Applications include, reversible contrast enhancement layer (R-CEL) in optical lithography, lithography mask inspection and writing and optical storage technologies.

Abstract: Two programmable masks are used for the exposure of three-dimensional patterns in a photosensitive material. This exposure technique takes advantages of symmetries and repeating structures in the exposure pattern to reduce the exposure time, while maintaining the flexibility to produce complicated three-dimensional shapes.