Abstract: The present invention relates to formulations of dengue virus vaccine comprising at least one live, attenuated dengue virus or live, attenuated chimeric flavivirus, a buffer, a sugar, a cellulose derivative, a glycol or sugar alcohol, optionally an alkali or alkaline salt and an amino acid; and formulations of dengue virus vaccine comprising at least one live, attenuated dengue virus or live, attenuated chimeric flavivirus, a buffer, a sugar of at least 150 mg/ml, a carrier, and optionally an alkali or alkaline salt and an amino acid.

Abstract: The invention relates to the stimulation of appetite and treatment of such appetite-suppressed conditions as cachexia, and in particular to an intranasal route of administration for appetite-stimulating agents such as peptide compounds and fragments related to or comprising the Agouti-Related Peptide (AgRP).

Abstract: A process for the recovery of nickel and/or cobalt from an impure nickel, cobalt or mixed nickel/cobalt material including the steps of: a) providing a nickel, cobalt or mixed nickel/cobalt material; and b) contacting the nickel, cobalt or mixed nickel/cobalt material with a feed ammoniacal ammonium carbonate solution and a reductant in a leach step.

Abstract: A double-gate transistor has front (upper) and back gates aligned laterally by a process of forming symmetric sidewalls in proximity to the front gate and then oxidizing the back gate electrode at a temperature of at least 1000 degrees for a time sufficient to relieve stress in the structure, the oxide penetrating from the side of the transistor body to thicken the back gate oxide on the outer edges, leaving an effective thickness of gate oxide at the center, aligned with the front gate electrode. Optionally, an angled implant from the sides of an oxide enhancing species encourages relatively thicker oxide in the outer implanted areas and an oxide-retarding implant across the transistor body retards oxidation in the vertical direction, thereby permitting increase of the lateral extent of the oxidation.

Abstract: A double gated silicon-on-insulator (SOI) MOSFET is fabricated by forming epitaxially grown channels, followed by a damascene gate. The double gated MOSFET features narrow channels, which increases current drive per layout width and provides low out conductance.

Abstract: A structure and method of fabrication for MOSFET devices with a polycrystalline SiGe junction is disclosed. Ge is selectively grown on Si while Si is selectively grown on Ge. Alternating depositions of Ge and Si layers yield the SiGe junction. The deposited layers are doped, and subsequently the dopants outdiffused into the device body. A thin porous oxide layer between the polycrystalline Ge and Si layers enhances the isotropy of the SiGe junctions.

Abstract: Described is a wet chemical surface treatment involving NH4OH that enables extremely strong direct bonding of two wafer such as semiconductors (e.g., Si) to insulators (e.g., SiO2) at low temperatures (less than or equal to 400° C.). Surface energies as high as ˜4835±675 mJ/m2 of the bonded interface have been achieved using some of these surface treatments. This value is comparable to the values reported for significantly higher processing temperatures (less than 1000° C.). Void free bonding interfaces with excellent yield and surface energies of ˜2500 mJ/m2 have also be achieved herein.

Abstract: A structure and method of fabrication for MOSFET devices with a polycrystalline SiGe junction is disclosed. Ge is selectively grown on Si while Si is selectively grown on Ge. Alternating depositions of Ge and Si layers yield the SiGe junction. The deposited layers are doped, and subsequently the dopants outdiffused into the device body. A thin porous oxide layer between the polycrystalline Ge and Si layers enhances the isotropy of the SiGe junctions.

Abstract: A double-gate transistor has front (upper) and back gates aligned laterally by a process of forming symmetric sidewalls in proximity to the front gate and then oxidizing the back gate electrode at a temperature of at least 1000 degrees for a time sufficient to relieve stress in the structure, the oxide penetrating from the side of the transistor body to thicken the back gate oxide on the outer edges, leaving an effective thickness of gate oxide at the center, aligned with the front gate electrode. Optionally, an angled implant from the sides of an oxide enhancing species encourages relatively thicker oxide in the outer implanted areas and an oxide-retarding implant across the transistor body retards oxidation in the vertical direction, thereby permitting increase of the lateral extent of the oxidation.

Abstract: A method of fabricating a SOI wafer having a gate-quality, thin buried oxide region is provided. The wafer is fabricating by forming a substantially uniform thermal oxide on a surface of a Si-containing layer of a SOI substrate which includes a buried oxide region positioned between the Si-containing layer and a Si-containing substrate layer. Next, a cleaning process is employed to form a hydrophilic surface on the thermal oxide. A carrier wafer having a hydrophilic surface is provided and positioned near the substrate such that the hydrophilic surfaces adjoin each other. Room temperature bonding is then employed to bond the carrier wafer to the substrate. An annealing step is performed and thereafter, the Si-containing substrate of the silicon-on-insulator substrate and the buried oxide region are selectively removed to expose the Si-containing layer.

Abstract: A double gated silicon-on-insulator (SOI) MOSFET is fabricated by forming epitaxially grown channels, followed by a damascene gate. The double gated MOSFET features narrow channels, which increases current drive per layout width and provides low out conductance.

Abstract: An emulsion adhesion composition comprising a polyvinyl alcohol stabilized polymer emulsion; the polymer comprising 40 to 94.5% by weight of a vinyl ester of an C.sub.1 -C.sub.13 alkanoic acid, 5 to 40% by weight ethylene and 0.5 to 10% by weight N-vinyl formamide or N-vinyl pyrrolidone, the adhesive being characterized by superior adhesion and heat resistance.

Abstract: The use of C.sub.1 -C.sub.5 alkyl butyrates, d-limonene, ethylene glycol monobutyl ether and C.sub.5 -C.sub.20 petroleum distillates and normal paraffins in place of methyl chloroform (1,1,1-trichloroethane) in conventional waterborne packaging and converting adhesives provides comparable or better adhesive products with reduced environmental and health related problems.