Abstract: Disclosed is a method of making InP-based DFB lasers that can reliably mitigate or substantially prevent erosion of the grating during overgrowth. The method comprises contacting, prior to overgrowth, the grating with a sulfurcontaining aqueous medium, e.g., 80 parts by weight H.sub.2 O/20 parts by weight ammonium sulfide.

Abstract: A novel gallium arsenide precursor has the formula R.sub.2 GaAs(SiR').sub.2 wherein R is selected from the group consisting of alkyl substituted cycloaliphatic group and alkyl substituted aromatic group and R' is alkyl. Preferably, R is pentamethylcyclopentadienyl and R' is methyl. The precursor is reacted with an alcohol, preferably ethanol or t-butanol at a temperature ranging from -20.degree. C. to 60.degree. C., preferably at room temperature, under water free conditions to form solid gallium arsenide and by-products which are liquid under the reaction conditions. The gallium arsenide forming reaction may be aided by a catalyst providing amount of a substance which is considered to react with excess alcohol reactant to generate a catalytic amount of HCl, e.g., (CH.sub.3).sub.3 SiCl or [R(Cl)GaAs(SiR'.sub.3).sub.2 ].sub.n wherein R is pentamethylcyclopentadienyl and R' is methyl and in solution in benzene n is 1 and 3.

Abstract: A novel gallium arsenide precursor has the formula R.sub.2 GaAs(SiR').sub.2 wherein R is selected from the group consisting of alkyl substituted cycloaliphatic group and alkyl substituted aromatic group and R' is alkyl. Preferably, R is pentamethylcyclopentadienyl and R' is methyl. The precursor is reacted with an alcohol, preferably ethanol or t-butanol at a temperature ranging from -20.degree. to 60.degree. C., preferably at room temperature, under water free conditions to form solid gallium arsenide and byproducts which are liquid under the reaction conditions. The gallium arsenide forming reaction may be aided by a catalyst providing amount of a substance which is considered to react with excess alcohol reactant to generate a catalytic amount of HCl, e.g., (CH.sub.3).sub.3 SiCl or [R(Cl)GaAs(SiR'.sub.3).sub.2 ].sub.n wherein R is pentamethylcyclopentadienyl and R' is methyl and in solution in benzene n is 1 and 3.

Abstract: A novel gallium arsenide precursor has the formula R.sub.2 GaAs(SiR').sub.2 wherein R is selected from the group consisting of alkyl substituted cycloaliphatic group and alkyl substituted aromatic group and R' is alkyl. Preferably, R is pentamethylclopentadienyl and R' is methyl. The precursor is reacted with an alcohol, preferably ethanol or t-butanol at a temperature ranging from -20.degree. C. to 60.degree. C., preferably at room temperature, under water free conditions to form solid gallium arsenide and by-products which are liquid under the reaction conditions.