Abstract: A transparent conductive film comprising at least one patterned region comprising a first concentration of at least one radiation absorbing compound and exhibiting a first surface resistivity, at least one unpatterned region comprising a second concentration of the at least one radiation absorbing compound and exhibiting a second surface resistivity, the second concentration being different from the first concentration and the second surface resistivity being different from the first surface resistivity, where the at least one patterned region and the at least one unpatterned region are indistinguishable from each other to the unaided human eye, and where the at least one radiation absorbing compound is capable of rendering the at least one patterned region and at least one unpatterned region distinguishable from each other to the unaided human eye when the at least one radiation absorbing compound is exposed to radiation within a defined band of wavelengths.

Abstract: A method for patterning a film, the film comprising conductive nanostructures dispersed in a matrix, the matrix comprising at least one first leachable compound, the method comprising leaching at least some of the at least one first leachable compound from the matrix to form at least one patterned region of the matrix, the at least one patterned region comprising at least some of the conductive nanostructures, where the film prior to leaching exhibits a first surface resistivity, a first total light transmittance, and a first percent haze, and the at least one patterned region exhibits a second surface resistivity that is less than the first surface resistivity.

Abstract: A method comprising etching a film comprising electrically conductive structures according to a pattern using an aqueous etching solution to provide an etched region having a first conductivity and an unetched region having a second conductivity, the second conductivity being greater than the first conductivity, wherein the aqueous etching solution either comprises 25 to 65% by weight of phosphoric acid and 1 to 18% by weight of nitric acid, or the aqueous etching solution comprises 65 to 75% by weight of nitric acid.