Abstract: A substrate cleaning device includes a rotation mechanism that rotates the substrate, a first cleaning solution supply nozzle that discharges a cleaning solution to which ultrasonic vibration is applied to the surface of the substrate, and a swing mechanism that swings the first cleaning solution supply nozzle from a vicinity of a rotation center of the substrate toward an outer peripheral edge of the substrate in a range narrower than a half-surface of the substrate.

Abstract: A substrate cleaning device and a substrate polishing device are provided. The substrate cleaning device is provided in a substrate polishing device, which includes a polishing table having a polishing surface for polishing a substrate and a top ring holding the substrate with a membrane while surrounding an outer peripheral part of the substrate with a retainer ring, and cleaning the surface after polishing. The top ring is freely movable between a substrate polishing position above the table and a substrate handover position at a side of the table. The substrate cleaning device is provided corresponding to a cleaning position between the polishing and handover positions, and includes a first spray unit including cleaning nozzles for spraying cleaning liquid on the substrate, membrane, and retainer ring at the cleaning position; and a second spray unit including a substrate rinse nozzle spraying rinse liquid onto the substrate at the cleaning position.

Abstract: A substrate cleaning device includes a rotation mechanism that rotates the substrate, a first cleaning solution supply nozzle that discharges a cleaning solution to which ultrasonic vibration is applied to the surface of the substrate, and a swing mechanism that swings the first cleaning solution supply nozzle from a vicinity of a rotation center of the substrate toward an outer peripheral edge of the substrate in a range narrower than a half-surface of the substrate.

Abstract: Provided is an apparatus and a method that allow a control of a removal amount at an atomic level and allow a selective removal from a projecting portion of a process target. According to one embodiment, a substrate processing apparatus is provided, and the substrate processing apparatus includes: a table for holding a substrate; a nozzle for supplying a process liquid to a top of the substrate held onto the table; a head for holding a photocatalyst; a conditioner for conditioning the photocatalyst; a first moving mechanism for moving the head in a direction perpendicular to a surface of the table; and a second moving mechanism for moving the head between the table and the conditioner.

Abstract: To perform both buff cleaning of a substrate surface and cleaning of an edge part of the substrate, a cleaning module includes: a rotary table configured to support a circular substrate and have a diameter smaller than a diameter of the substrate; a buff cleaning portion configured to buff clean a front side of the substrate while contacting the front side of the substrate supported by the rotary table; a buff cleaning portion movement mechanism configured to move the buff cleaning portion with respect to the substrate; a buff cleaning portion control mechanism configured to control an operation of the buff cleaning portion movement mechanism; and an edge cleaning portion configured to clean an edge part of the substrate while contacting the edge part of the substrate supported by the rotary table.

Abstract: An even step elimination performance is obtained even when steps of various dimensions exist which are caused due to pattern structures existing in a chip or film forming methods. A planarizing apparatus is provided which is configured to planarize a surface of a substrate, and this planarizing apparatus includes a surface roughening unit configured to roughen a target processing surface of the substrate by use of roughening particles and a CMP unit configured to polish chemically and mechanically (CMP) the roughened target processing surface of the substrate.