Abstract: Semiconductor structures and fabrication methods thereof are provided. The semiconductor includes a substrate; a gate structure on the substrate; and a dielectric layer on the substrate and covering sidewall surfaces of the gate structure. The dielectric layer includes an opening passing through the gate structure along a direction perpendicular to an extending direction of the gate structure. The semiconductor structure also includes a first isolation layer in the opening and with a top surface lower than a top surface of the gate structure.

Abstract: Semiconductor structures and fabrication methods thereof are provided. The semiconductor includes a substrate; a gate structure on the substrate; and a dielectric layer on the substrate and covering sidewall surfaces of the gate structure. The dielectric layer includes an opening passing through the gate structure along a direction perpendicular to an extending direction of the gate structure. The semiconductor structure also includes a first isolation layer in the opening and with a top surface lower than a top surface of the gate structure.

Abstract: The present invention provides method of manufacturing dual gate oxide devices. The method comprises coating photoresist on the substrate which is deposited by an oxide thin film; removing some of the photoresist by exposure and development to divide the oxide thin film into a first area to be etched and a second area coated by the remained photoresist; coating RELACS material on the remained photoresist and heating to form a protective film based on the crosslinking reaction between the RELACS material and the high molecular compounds in the photoresist; performing UV radiation to strengthen and cure the protective film; removing the oxide thin film in the first area by etching and removing the remained photoresist; and depositing again an oxide firm to form an oxide layer of different thickness in the first area and the second area so as to form a dual gate oxide structure.

Abstract: The present invention provides method of manufacturing dual gate oxide devices. The method comprises coating photoresist on the substrate which is deposited by an oxide thin film; removing some of the photoresist by exposure and development to divide the oxide thin film into a first area to be etched and a second area coated by the remained photoresist; coating RELACS material on the remained photoresist and heating to form a protective film based on the crosslinking reaction between the RELACS material and the high molecular compounds in the photoresist; performing UV radiation to strengthen and cure the protective film; removing the oxide thin film in the first area by etching and removing the remained photoresist; and depositing again an oxide film to form an oxide layer of different thickness in the first area and the second area so as to form a dual gate oxide structure.