Abstract: The present invention generally relates to power electronic switching circuits and in particular to inverter modules employing two or more controlled switches that can be used with reactive loads. An inverter circuit is provided which includes first and second input terminals for being connected to a DC power source; first and second output terminals for outputting an AC voltage; at least one metal oxide semiconductor field effect transistor, MOSFET, having a parasitic body diode. The inverter circuit further includes at least one disabling element for disabling said body diode. This may result in an improved efficiency of the inverter circuit in combination with a reactive power capability. Further, a semiconductor switching device is disclosed, comprising at least one metal oxide semiconductor field effect transistor, MOSFET, and at least one insulated gate bipolar transistor, IGBT, wherein said MOSFET and said IGBT are connected in parallel.