Abstract: The deposition of thin films is carried out by a co-sputtering cathode technique particularly suited for deposition of doped thin films on large area substrates. A relatively large planar magnetron sputtering apparatus having a rectangular (picture frame shaped) plasma region is provided to obtain efficient sputtering of the host material. A vacant center area defined by the plasma region is provided for diode sputtering of the dopant. In RF sputtering, co-excitation of the power source is desired to prevent RF mode beating.

Abstract: A process and associated system for forming a thin film phosphor layer which is comprised of a host substance doped with an activator and which layer is formed by a sputtering process. Heat is applied to the substrate to elevate the temperature thereof while maintaining a vacuum in the sputtering chamber. The substrate is supported for movement in the chamber. Sputtering is accomplished within the chamber by causing a sputtering gas to flow therein while concurrently exciting host and activator targets to form a plasma in the chamber and maintaining this sputtering for a predetermined period of time.

Abstract: In an evaporation source for the vacuum deposition of sublimating material, the evaporant surrounds, and is spaced from, an axially disposed coiled tungsten heater. The evaporated material passes out of the source in an upward direction to deposit on a substrate located above the source.