Abstract: Radio Frequency Identification (RFID) tags are provided, along with apparatuses and methods for making. In some embodiments, the RFID tags include an RFID tag chip that is attached to an inlay and/or a strap. The inlay or strap has one or more contact bumps formed thereon. In some of these embodiments, the RFID tag chip includes pads for electrical contacts, but not chip-bumps, thanks to the contact bump.

Abstract: Radio Frequency Identification (RFID) tags are provided, along with apparatuses and methods for making. In some embodiments, the RFID tags include an RFID tag chip that is attached to an inlay and/or a strap. The inlay or strap has one or more contact bumps formed thereon. In some of these embodiments, the RFID tag chip includes pads for electrical contacts, but not chip-bumps, thanks to the contact bump.

Abstract: One Time Programmable (OTP) memory structures and methods for pretesting the support circuitry are provided. A group of dedicated test cells associated with one or more groups of regular OTP cells are used to test the support circuitry for the regular OTP cells. The dedicated cells are programmed and read. The read values are compared to the programmed values or expected values. As a result of the comparison, failing memories may be designated “Not Usable”, while regular OTP cells of passing memories can be programmed for their purpose resulting in elimination of wasted memories during test.

Abstract: According to one embodiment, a method of testing an integrated circuit is provided. The quiescent current measuring of an integrated circuit is measured at two voltages. The functional relationship between the current measurements is determined and compared against a predetermined functional relationship to determine whether a defect exists in the integrated circuit.

Abstract: According to one embodiment, a method of testing an integrated circuit is provided. A reference voltage is coupled to each of a first and second comparator integrated on the chip. A supply voltage is compared to the reference voltage in a comparator to determine overvoltage or undervoltage conditions. The results of the comparison are stored and sizing and placing of at least one decoupling circuit in the circuit design is made based on the stored determinations.

Abstract: A method of manufacturing a semiconductor integrated circuit includes providing a fabricated integrated circuit on a wafer. A test fixture is connected to unencapsulated pads on the integrated circuit to monitor an operating parameter for the circuit and to determine a unique identifier for the die. The parameter is analyzed in post processing.

Abstract: A structure for programming a memory cell on an integrated circuit provides access at multiple mask levels of the integrated circuit to each of the programming voltages which may be used to program the memory cell. In an embodiment, the structure includes a conductive signal path extending through multiple horizontally conductive layers of the integrated circuit from a programming voltage pad (or node) to an input of the memory cell. The conductive signal path includes portions selected from multiple alternate path portions formed within the multiple horizontally conductive layers through which the signal path extends. An embodiment of a method for making a mask includes selecting one of multiple configurations of the programming structure portion to be formed using the mask. A computer-usable carrier medium may include digital representations of the alternative configurations for a programming structure portion from which a programming structure pattern may be selected.

Abstract: A circuit that provides for digitally programmable high voltage drive, as well as fast current limiting capability for testing of integrated circuits. The circuit also provides for digitally programmable slew rate control for controlling the rise and fall times of an output voltage. Integrated circuits requiring low voltage and high voltage tests at different speeds and with different current limiting conditions, or low and high current forcing with different voltage clamp levels, or a mixture of the two can be tested in a single continuous test pattern using the circuit of the present invention.