Patents by Inventor Ernest Bassous
Ernest Bassous has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6156484Abstract: Disclosed is a sculpted probe pad and a gray scale etching process for making arrays of such probe pads on a thin flexible interposer for testing the electrical integrity of microelectronic devices at terminal metallurgy. Also used in the etching process is a novel fixture for holding the substrate and a novel mask for 1-step photolithographic exposure. The result of the invention is an array of test probes of preselected uniform topography, which make ohmic contact at all points to be tested simultaneously and nondestructively.Type: GrantFiled: February 11, 1998Date of Patent: December 5, 2000Assignee: International Business Machines CorporationInventors: Ernest Bassous, Gobinda Das, Frank Daniel Egitto, Natalie Barbara Feilchenfeld, Elizabeth F. Foster, Stephen Joseph Fuerniss, James Steven Kamperman, Donald Joseph Mikalsen, Michael Roy Scheuermann, David Brian Stone
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Patent number: 5525828Abstract: Silicon-VLSI-compatible photodetectors, in the form of a metal-semiconductor-metal photodetector (MSM-PD) or a lateral p-i-n photodetector (LPIN-PD), are disclosed embodying interdigitated metallic electrodes on a silicon surface. The electrodes of the MSM-PD have a moderate to high electron and hole barrier height to silicon, for forming the Schottky barriers, and are fabricated so as to be recessed in the surface semiconducting layer of silicon through the use of self-aligned metallization either by selective deposition or by selective reaction and etching, in a manner similar to the SALICIDE concept. Fabrication is begun by coating the exposed Si surface of a substrate with a transparent oxide film, such that the Si/oxide interface exhibits low surface recombination velocity.Type: GrantFiled: August 23, 1994Date of Patent: June 11, 1996Assignee: International Business Machines CorporationInventors: Ernest Bassous, Jean-Marc Halbout, Subramanian S. Iyer, Rajiv V. Joshi, Vijay P. Kesan, Michael R. Scheuermann, Massimo A. Ghioni
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Patent number: 5501787Abstract: A system for making porous silicon on blank and patterned Si substrates by "immersion scanning", particularly suitable for fabricating light-emitting Si devices and utilizing an open electrolytic cell having a cathode and an opposing anode consisting of a Si substrate on which the porous silicon is to be formed, both disposed, with their opposing surfaces in parallel, in an aqueous HF solution electrolyte contained in the cell. The substrate anode is mounted to be movable relative to the electrolyte so as to be mechanically cycled or scanned in and out of the electrolyte at a programmable rate during anodization. The uniformity, thickness and porosity of the resulting anodized layer on the substrate are determined by the scanning speed, number of cycles, current density, and HF-based electrolyte parameters of the system, and the Si substrate resistivity, conductivity type, and crystal orientation.Type: GrantFiled: February 27, 1995Date of Patent: March 26, 1996Assignee: International Business Machines CorporationInventors: Ernest Bassous, Jean-Marc Halbout, Subramanian S. Iyer, Vijay P. Kesan
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Patent number: 5458756Abstract: A system for making porous silicon on blank and patterned Si substrates by "immersion scanning", particularly suitable for fabricating light-emitting Si devices and utilizing an open electolytic cell having a cathode and an opposing anode consisting of a Si substrate on which the porous silicon is to be formed, both disposed, with their opposing surfaces in parallel, in an aqueous HF solution electrolyte contained in the cell. The substrate anode is mounted to be movable relative to the electrolyte so as to be mechanically cycled or scanned in and out of the electrolyte at a programmable rate during anodization. The uniformity, thickness and porosity of the resulting anodized layer on the substrate are determined by the scanning speed, number of cycles, current density, and HF-based electrolyte parameters of the system, and the Si substrate resistivity, conductivity type, and crystal orientation.Type: GrantFiled: June 27, 1994Date of Patent: October 17, 1995Assignee: International Business Machines CorporationInventors: Ernest Bassous, Jean-Marc Halbout, Subramanian S. Iyer, Vijay P. Kesan
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Patent number: 5357899Abstract: The subject invention provides a silicon membrane material made from silicon that is epitaxially deposited at low temperatures greater than or equal to 500.degree. C. and doped with controlled amounts of boron and germanium. A silicon membrane structure is provided and made by one or more layers of ultra thin epitaxially deposited silicon layers that are precisely controlled in both thickness and composition. At least one of the layers is doped with boron in a concentration range greater than 2.times.10.sup.20 atoms of boron per cubic centimeter of silicon, or with germanium in a concentration range greater than 5.times.10.sup.20 atoms of germanium per cubic centimeter of silicon, or with a combination of boron and germanium in these concentration ranges. A silicon membrane fabrication process is also provided which requires no additional masking film to protect the membrane surface during KOH etching of the bulk silicon substrate.Type: GrantFiled: September 13, 1993Date of Patent: October 25, 1994Assignee: International Business Machines CorporationInventors: Ernest Bassous, Bernard S. Meyerson, Kevin J. Uram
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Patent number: 5340753Abstract: The present invention is directed to a method for forming a self-aligned epitaxial base transistor in a double polysilicon type process using non-selective low temperature epitaxy (LTE) to form the base layer. The present invention utilizes a thin very heavily doped LTE layer that is both a conductive etch stop and a diffusion source for doping the extrinsic base of the transistor. The deposition of the non-selective LTE base layer is followed immediately by the deposition of the conductive etch stop layer. A layer of undoped polycrystalline semiconductor is deposited on the conductive etch stop layer and subsequently ion implanted. Oxide and nitride insulating layers are deposited and the structure is patterned using a highly directional reactive ion etch to form the emitter window leaving a thin layer of the polycrystalline layer. The thin polycrystalline layer is selectively removed in a KOH solution leaving the conductive etch stop layer.Type: GrantFiled: April 14, 1993Date of Patent: August 23, 1994Assignee: International Business Machines Corp.Inventors: Ernest Bassous, Gary L. Patton, Johannes M. C. Stork
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Patent number: 5273829Abstract: The subject invention provides a silicon membrane material made from silicon that is epitaxially deposited at low temperatures greater than or equal to 500.degree. C. and doped with controlled amounts of boron and germanium. A silicon membrane structure is provided and made by one or more layers of ultra thin epitaxially deposited silicon layers that are precisely controlled in both thickness and composition. At least one of the layers is doped with boron in a concentration range greater than 2.times.10.sup.20 atoms of boron per cubic centimeter of silicon, or with germanium in a concentration range greater than 5.times.10.sup.20 atoms of germanium per cubic centimeter of silicon, or with a combination of boron and germanium in these concentration ranges. A silicon membrane fabrication process is also provided which requires no additional masking film to protect the membrane surface during KOH etching of the bulk silicon substrate.Type: GrantFiled: October 8, 1991Date of Patent: December 28, 1993Assignee: International Business Machines CorporationInventors: Ernest Bassous, Bernard S. Meyerson, Kevin J. Uram
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Patent number: 4978421Abstract: The method of fabrication of a monolithic silicon membrane structure in which the membrane and its supporting framework are constructed from a single ultra thick body of silicon. The fabrication sequence includes the steps of providing a doped membrane layer on the silicon body, forming an apertured mask on the silicon body, and removal of an unwanted silicon region by mechanical grinding and chemical etching to provide a well opening in the silicon body terminating in the doped membrane.Type: GrantFiled: November 13, 1989Date of Patent: December 18, 1990Assignee: International Business Machines CorporationInventors: Ernest Bassous, Joseph M. Blum, Kevin K. Chan, Angela C. Lamberti, Constantino Lapadula, Istvan Lovas, Alan D. Wilson
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Patent number: 4592628Abstract: A mirror array light valve is described comprising a transparent substrate, a plurality of post members arranged in a regular array on said substrate, and a plurality of deflectable square, rectangular, hexagonal or the like light-reflecting elements arranged in a regular array on said post members such that a post member is positioned under a corresponding corner of each element; methods for making the mirror array light valve are also described.Type: GrantFiled: July 1, 1981Date of Patent: June 3, 1986Assignee: International Business MachinesInventors: Carl Altman, Ernest Bassous, Carlton M. Osburn, Peter Pleshko, Arnold Reisman, Marvin B. Skolnik
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Patent number: 4173818Abstract: A method, including a sequence of process steps, for fabricating insulated gate field effect transistors having very short effective channel lengths. In a first version of the method, the source and drain regions of the device are opened in one process step and self-alignment of the source and the drain to the gate is achieved in one masking step. The drain region is then masked and the source side of the channel is implanted to adjust the threshold voltage of the high threshold voltage channel region. In a second version of the method, the source region is opened and self-aligned with the gate prior to the opening of drain region. Implantation to adjust the threshold voltage of the high threshold voltage channel region takes place before the drain region is opened, and then the drain region is opened and self-aligned with the gate in a further masking step. In either version, the threshold voltage is adjustable and the channel length is controlled to be a small value.Type: GrantFiled: May 30, 1978Date of Patent: November 13, 1979Assignee: International Business Machines CorporationInventors: Ernest Bassous, Tak H. Ning, Carlton M. Osburn
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Patent number: 4113551Abstract: A family of etchants for polycrystalline silicon based upon an aqueous solution of NR.sub.4 OH, where R is an alkyl group, has a relatively low etching rate enabling the exercise of better control over the delineation of fine structures.Type: GrantFiled: December 16, 1977Date of Patent: September 12, 1978Assignee: International Business Machines CorporationInventors: Ernest Bassous, Cheng-Yih Liu
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Patent number: 4047184Abstract: A charge electrode array for use in an ink jet printing apparatus is formed by anisotropic etching of apertures through a single crystal silicon substrate of (110) orientation. Conductive diffusion layers in the walls of and adjacent to the apertures permit a charge to be placed on a jet stream passing through the apertures. Contacts can be formed on the adjacent diffusion layers to provide connection to an externally located charging circuit or the contacts may be omitted when the charging circuit is formed in the substrate itself and connected by diffusion or a metal layer to each adjacent diffusion layer. Jet nozzles and synchronization electrodes are shown incorporated in the charge electrode array to form a monolithic structure capable of performing a plurality of functions. Substrate contacts are also provided for biasing.Type: GrantFiled: January 28, 1976Date of Patent: September 6, 1977Assignee: International Business Machines CorporationInventors: Ernest Bassous, Lawrence Kuhn
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Patent number: 4007464Abstract: In an ink jet printing system, a single nozzle or an array of nozzles are etched in a semiconductor material such as silicon. Each nozzle has polygonal or N-sided entrance and exit apertures of different cross-sectional area. Preferably, the nozzle is in the shape of a truncated pyramid with the entrance and exit apertures being substantially square in cross-section. The corners of the apertures and wall interfaces may be rounded to reduce stress concentrations.Type: GrantFiled: January 23, 1975Date of Patent: February 8, 1977Assignee: International Business Machines CorporationInventors: Ernest Bassous, Lawrence Kuhn, Arnold Reisman, Howard H. Taub
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Jet nozzle structure for electrohydrodynamic droplet formation and ink jet printing system therewith
Patent number: 3949410Abstract: The practice of this disclosure obtains a monolithic structure useful for electrohydrodynamically synchronizing the formation of droplets in a jet stream exiting from a jet nozzle. The monolithic structure is primarily adaptable for ink jet printing. The jet nozzle structure provided by the practice of this disclosure includes a jet nozzle design in a crystalline semiconductor block, e.g., of silicon (Si), germanium (Ge) or gallium arsenide (GaAs), with an electrode structure which is integrally incorporated therewith whereby a variable electric field is established proximate to the orifice of the jet nozzle structure. The electric field electrohydrodynamically perturbs the jet stream emitting from the jet nozzle structure so that formation of drops in the jet stream is controllably achieved, e.g., synchronously when the variable electric field is oscillating with a given periodicity.Type: GrantFiled: January 23, 1975Date of Patent: April 6, 1976Assignee: International Business Machines CorporationInventors: Ernest Bassous, Lawrence Kuhn, Howard H. Taub