Patents by Inventor Ernest Demaray
Ernest Demaray has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240088344Abstract: Embodiments of the present invention are in the field of materials, apparatus, process, methods, and designs for manufacture of a thin film energy storage devices with a capacity greater then 1 mA-hr-cm2 including thin film Lithium metal and Li+ ion batteries and capacitors having high energy density and high cycle life due to the incorporation of at least one vacuum thin film with respect to protection and electrical conductivity of the electrodes, and at least one vacuum thin film electrolyte for electrical insulation of the electrodes and ion conduction after assembly for low self discharge and high cycle life battery cells.Type: ApplicationFiled: October 23, 2023Publication date: March 14, 2024Inventors: R. Ernest DEMARAY, James KASCHMITTER, Pavel KHOKHLOV
-
Patent number: 11824183Abstract: Embodiments of the present invention are in the field of materials, apparatus, process, methods, and designs for manufacture of a thin film energy storage devices with a capacity greater then 1 mA-hr-cm?2 including thin film Lithium metal and Li+ ion batteries and capacitors having high energy density and high cycle life due to the incorporation of at least one vacuum thin film with respect to protection and electrical conductivity of the electrodes, and at least one vacuum thin film electrolyte for electrical insulation of the electrodes and ion conduction after assembly for low self discharge and high cycle life battery cells.Type: GrantFiled: October 22, 2020Date of Patent: November 21, 2023Assignee: DEMARAY, LLCInventors: R. Ernest Demaray, James Kaschmitter, Pavel Khokhlov
-
Publication number: 20210151734Abstract: Embodiments of the present invention are in the field of materials, apparatus, process, methods, and designs for manufacture of a thin film energy storage devices with a capacity greater then 1 mA-hr-cm?2 including thin film Lithium metal and Li+ ion batteries and capacitors having high energy density and high cycle life due to the incorporation of at least one vacuum thin film with respect to protection and electrical conductivity of the electrodes, and at least one vacuum thin film electrolyte for electrical insulation of the electrodes and ion conduction after assembly for low self discharge and high cycle life battery cells.Type: ApplicationFiled: October 22, 2020Publication date: May 20, 2021Inventors: R. Ernest DEMARAY, James KASCHMITTER, Pavel KHOKHLOV
-
Patent number: 10818909Abstract: Embodiments of the present invention are in the field of materials, apparatus, process, methods, and designs for manufacture of a thin film energy storage devices with a capacity greater then 1 mA-hr-cm?2 including thin film Lithium metal and Li+ ion batteries and capacitors having high energy density and high cycle life due to the incorporation of at least one vacuum thin film with respect to protection and electrical conductivity of the electrodes, and at least one vacuum thin film electrolyte for electrical insulation of the electrodes and ion conduction after assembly for low self discharge and high cycle life battery cells.Type: GrantFiled: May 9, 2017Date of Patent: October 27, 2020Assignee: DEMARAY, LLCInventors: R. Ernest Demaray, James Kaschmitter, Pavel Khokhlov
-
Publication number: 20180331349Abstract: In accordance with the present invention, deposition of LiCoO2 layers in a pulsed-dc physical vapor deposition process is presented. Such a deposition can provide a low-temperature, high deposition rate deposition of a crystalline layer of LiCoO2 with a desired <101> or <003> orientation. Some embodiments of the deposition address the need for high rate deposition of LiCoO2 films, which can be utilized as the cathode layer in a solid state rechargeable Li battery, Embodiments of the process according to the present invention can eliminate the high temperature (>700° C.) anneal step that is conventionally needed to crystallize the LiCoO2 layer.Type: ApplicationFiled: February 2, 2018Publication date: November 15, 2018Applicant: DEMARAY, LLCInventors: Hongmei Zhang, R. Ernest Demaray
-
Patent number: 10120130Abstract: A solar cell includes a waveguide core for receiving light, a first layer formed on the waveguide core, a second layer formed on the first layer, a third layer formed on the second layer, first metalization coupled to the first layer, and second metalization coupled to the third layer. The first layer comprises a first optical film which varies in an index of refraction in a lateral direction between a first input end where the light is received and a first output end where the light is emitted. In some embodiments, wherein one or more of the first, second, or third layers has a tapered lateral thickness. In some embodiments, the first, second, and third layers form a PIN device. In some embodiments, the waveguide core has a first index of refraction that is lower than respective indexes of refraction for the first, second, and third layers.Type: GrantFiled: May 23, 2018Date of Patent: November 6, 2018Assignee: DEMARAY, LLCInventor: R. Ernest Demaray
-
Publication number: 20180275341Abstract: A solar cell includes a waveguide core for receiving light, a first layer formed on the waveguide core, a second layer formed on the first layer, a third layer formed on the second layer, first metallization coupled to the first layer, and second metallization coupled to the third layer. The first layer comprises a first optical film which varies in an index of refraction in a lateral direction between a first input end where the light is received and a first output end where the light is emitted. In some embodiments, wherein one or more of the first, second, or third layers has a tapered lateral thickness. In some embodiments, the first, second, and third layers form a PIN device. In some embodiments, the waveguide core has a first index of refraction that is lower than respective indexes of refraction for the first, second, and third layers.Type: ApplicationFiled: May 23, 2018Publication date: September 27, 2018Applicant: DEMARAY, LLCInventor: R. Ernest Demaray
-
Patent number: 9989701Abstract: Methods of depositing materials to provide for efficient coupling of light from a first device to a second device are disclosed. In general, these methods include mounting one or more wafers on a rotating table that is continuously rotated under one or more source targets. A process gas can be provided and one or more of the source targets powered while the wafers are biased to deposit optical dielectric films on the one or more wafers. In some embodiments, a shadow mask can be laterally translated across the one or more wafers during deposition. In some embodiments, deposited films can have lateral and/or horizontal variation in index of refraction and/or lateral variation in thickness.Type: GrantFiled: October 23, 2017Date of Patent: June 5, 2018Assignee: DEMARAY, LLCInventor: R. Ernest Demaray
-
Publication number: 20180045886Abstract: Methods of depositing materials to provide for efficient coupling of light from a first device to a second device are disclosed. In general, these methods include mounting one or more wafers on a rotating table that is continuously rotated under one or more source targets. A process gas can be provided and one or more of the source targets powered while the wafers are biased to deposit optical dielectric films on the one or more wafers. In some embodiments, a shadow mask can be laterally translated across the one or more wafers during deposition. In some embodiments, deposited films can have lateral and/or horizontal variation in index of refraction and/or lateral variation in thickness.Type: ApplicationFiled: October 23, 2017Publication date: February 15, 2018Inventor: R. Ernest Demaray
-
Patent number: 9887414Abstract: In accordance with the present invention, deposition of LiCoO2 layers in a pulsed-dc physical vapor deposition process is presented. Such a deposition can provide a low-temperature, high deposition rate deposition of a crystalline layer of LiCoO2 with a desired <101> or <003> orientation. Some embodiments of the deposition address the need for high rate deposition of LiCoO2 films, which can be utilized as the cathode layer in a solid state rechargeable Li battery. Embodiments of the process according to the present invention can eliminate the high temperature (>700° C.) anneal step that is conventionally needed to crystallize the LiCoO2 layer.Type: GrantFiled: December 20, 2013Date of Patent: February 6, 2018Assignee: DEMARAY, LLCInventors: Hongmei Zhang, R. Ernest Demaray
-
Publication number: 20180006293Abstract: Embodiments of the present invention are in the field of materials, apparatus, process, methods, and designs for manufacture of a thin film energy storage devices with a capacity greater then 1 mA-hr-cm?2 including thin film Lithium metal and Li+ ion batteries and capacitors having high energy density and high cycle life due to the incorporation of at least one vacuum thin film with respect to protection and electrical conductivity of the electrodes, and at least one vacuum thin film electrolyte for electrical insulation of the electrodes and ion conduction after assembly for low self discharge and high cycle life battery cells.Type: ApplicationFiled: May 9, 2017Publication date: January 4, 2018Inventors: R. Ernest DEMARAY, James KASCHMITTER, Pavel KHOKHLOV
-
Patent number: 9798082Abstract: Methods of depositing materials to provide for efficient coupling of light from a first device to a second device are disclosed. In general, these methods include mounting one or more wafers on a rotating table that is continuously rotated under one or more source targets. A process gas can be provided and one or more of the source targets powered while the wafers are biased to deposit optical dielectric films on the one or more wafers. In some embodiments, a shadow mask can be laterally translated across the one or more wafers during deposition. In some embodiments, deposited films can have lateral and/or horizontal variation in index of refraction and/or lateral variation in thickness.Type: GrantFiled: May 9, 2016Date of Patent: October 24, 2017Assignee: DEMARAY, LLCInventor: R. Ernest Demaray
-
Publication number: 20160266312Abstract: Methods of depositing materials to provide for efficient coupling of light from a first device to a second device are disclosed. In general, these methods include mounting one or more wafers on a rotating table that is continuously rotated under one or more source targets. A process gas can be provided and one or more of the source targets powered while the wafers are biased to deposit optical dielectric films on the one or more wafers. In some embodiments, a shadow mask can be laterally translated across the one or more wafers during deposition. In some embodiments, deposited films can have lateral and/or horizontal variation in index of refraction and/or lateral variation in thickness.Type: ApplicationFiled: May 9, 2016Publication date: September 15, 2016Inventor: R. Ernest DEMARAY
-
Publication number: 20160181066Abstract: Systems and methods using PVD for producing materials, for example nitrides, are disclosed. The present application also relates to use of the materials for electrode materials.Type: ApplicationFiled: October 16, 2013Publication date: June 23, 2016Inventors: Daniel Brors, Richard Ernest DeMaray, David Slutz, Richard Clark
-
Patent number: 9366816Abstract: Methods of depositing materials to provide for efficient coupling of light from a first device to a second device are disclosed. In general, these methods include mounting one or more wafers on a rotating table that is continuously rotated under one or more source targets. A process gas can be provided and one or more of the source targets powered while the wafers are biased to deposit optical dielectric films on the one or more wafers. In some embodiments, a shadow mask can be laterally translated across the one or more wafers during deposition. In some embodiments, deposited films can have lateral and/or horizontal variation in index of refraction and/or lateral variation in thickness.Type: GrantFiled: November 12, 2013Date of Patent: June 14, 2016Assignee: DEMARAY, LLCInventor: R. Ernest Demaray
-
Publication number: 20140332371Abstract: A method of deposition of a transparent conductive film from a metallic target is presented. A method of forming a transparent conductive oxide film according to embodiments of the present invention include depositing the transparent conductive oxide film in a pulsed DC reactive ion process with substrate bias, and controlling at least one process parameter to affect at least one characteristic of the conductive oxide film. The resulting transparent oxide film, which in some embodiments can be an indium-tin oxide film, can exhibit a wide range of material properties depending on variations in process parameters. For example, varying the process parameters can result in a film with a wide range of resistive properties and surface smoothness of the film.Type: ApplicationFiled: May 20, 2014Publication date: November 13, 2014Inventors: R. Ernest Demaray, Mukundan Narasimhan
-
Publication number: 20140140659Abstract: Methods of depositing materials to provide for efficient coupling of light from a first device to a second device are disclosed. In general, these methods include mounting one or more wafers on a rotating table that is continuously rotated under one or more source targets. A process gas can be provided and one or more of the source targets powered while the wafers are biased to deposit optical dielectric films on the one or more wafers. In some embodiments, a shadow mask can be laterally translated across the one or more wafers during deposition. In some embodiments, deposited films can have lateral and/or horizontal variation in index of refraction and/or lateral variation in thickness.Type: ApplicationFiled: November 12, 2013Publication date: May 22, 2014Applicant: Demaray LLCInventor: R. Ernest Demaray
-
Publication number: 20140102878Abstract: In accordance with the present invention, deposition of LiCoO2 layers in a pulsed-dc physical vapor deposition process is presented. Such a deposition can provide a low-temperature, high deposition rate deposition of a crystalline layer of LiCoO2 with a desired <101> or <003> orientation. Some embodiments of the deposition address the need for high rate deposition of LiCoO2 films, which can be utilized as the cathode layer in a solid state rechargeable Li battery. Embodiments of the process according to the present invention can eliminate the high temperature (>700° C.) anneal step that is conventionally needed to crystallize the LiCoO2 layer.Type: ApplicationFiled: December 20, 2013Publication date: April 17, 2014Inventors: Hongmei Zhang, R. Ernest Demaray
-
Patent number: 8173482Abstract: Methods for protecting a cadmium sulfide layer on a substrate are provided. The method can include sputtering a cadmium sulfide layer onto a substrate from a cadmium sulfide target at a sputtering pressure (e.g., about 10 mTorr to about 150 mTorr), and sputtering a cap layer directly on the cadmium sulfide layer. The cap layer can be sputtered directly onto the cadmium sulfide layer without breaking vacuum of the sputtering pressure. Methods are also provided for manufacturing a cadmium telluride based thin film photovoltaic device through depositing a cadmium sulfide layer on a substrate, depositing a cap layer directly on the cadmium sulfide layer, heating the substrate to sublimate at least a portion of the cap layer from the cadmium sulfide layer, and then depositing a cadmium telluride layer on the cadmium sulfide layer. An intermediate substrate for forming a cadmium telluride based thin-film photovoltaic device is also provided.Type: GrantFiled: April 30, 2010Date of Patent: May 8, 2012Assignee: PrimeStar Solar, Inc.Inventors: Jennifer Ann Drayton, Richard Ernest Demaray
-
Publication number: 20110269261Abstract: Methods for protecting a cadmium sulfide layer on a substrate are provided. The method can include sputtering a cadmium sulfide layer onto a substrate from a cadmium sulfide target at a sputtering pressure (e.g., about 10 mTorr to about 150 mTorr), and sputtering a cap layer directly on the cadmium sulfide layer. The cap layer can be sputtered directly onto the cadmium sulfide layer without breaking vacuum of the sputtering pressure. Methods are also provided for manufacturing a cadmium telluride based thin film photovoltaic device through depositing a cadmium sulfide layer on a substrate, depositing a cap layer directly on the cadmium sulfide layer, heating the substrate to sublimate at least a portion of the cap layer from the cadmium sulfide layer, and then depositing a cadmium telluride layer on the cadmium sulfide layer. An intermediate substrate for forming a cadmium telluride based thin-film photovoltaic device is also provided.Type: ApplicationFiled: April 30, 2010Publication date: November 3, 2011Applicant: PRIMESTAR SOLAR, INC.Inventors: Jennifer Ann Drayton, Richard Ernest Demaray