Abstract: A method and apparatus for inducing a localised optical transmission loss in an optical fiber cable is described, which is particularly well suited for use with optical time-domain reflectometry (OTDR) equipment to aid in locating faults in an optical fiber cable. A small portion of the optical fiber cable is cooled, such as by immersion in a cryogenic liquid like liquid nitrogen, and fibres in the cooled cable portion exhibit localised optical transmission loss which can be detected as a point loss (26) with the OTDR trace (24). The technique of inducing the point loss is non-invasive, and the localised transmission loss disappears when the cable portion returns to the ambient temperature, without damage to the cable.

Abstract: A voltage regulator with load pole stabilization is disclosed. The voltage regulator consists of an error amplifier, an integrator which includes a switched capacitor, a pass transistor, and a feed back circuit. In one embodiment, the integrator circuit includes an amplifier, a capacitor, and a switched capacitor which is driven by a voltage controlled oscillator. The voltage controlled oscillator changes its frequency of oscillation proportional to the output current. In another embodiment, the switched capacitor is driven by a current controlled oscillator whose frequency of oscillation is also proportional to the output current of the voltage regulator. When the output current demand is large, the controlled oscillators increase the frequency which decreases the effective resistance of the switched capacitor thereby changing the frequency of the zero to respond to the change in the load pole.

Abstract: A spring biased jig or the like for holding an electrical connector and a flat cable in position to terminate the cable.

Abstract: In a dual hydraulic master cylinder assembly both pressure spaces are connected by a transfer passage incorporating a transfer valve which is open when both master cylinders are operated simultaneously, and the transfer valve comprises an unsprung valve member for engagement with one of a pair of spaced valve seatings to cut-off communication between the pressure spaces when one master cylinder is operated on its own.

Abstract: An SI.sub.1 I.sub.2 M (semiconductor-insulator.sub.1 -insulator.sub.2 -metal) memory structure, containing an impurity such as tungsten concentrated in a region including the interface ("I.sub.1 I.sub.2 ") region between the I.sub.1 and I.sub.2 region, is fabricated by depositing an oxide of the impurity, such as tungsten trioxide, on the then exposed, I.sub.1 layer prior to fabricating the I.sub.2 layer. The oxide of the impurity, such as tungsten trioxide, can be advantageously deposited by means of reactive evaporation.