Abstract: A transparent display includes a display including a transparent substrate and a patterned diamond layer formed on the transparent substrate to at least in part define a diamond waveguide. At least two electronic devices can be connected by the diamond waveguide, and can include a sensor, a transducer, or electronic circuitry, including communication, control, or data processing electronic circuitry.

Abstract: Disclosed herein is method for fabricating a graphene layer on a non-graphene carbon layer including steps of cleaning and seeding a substrate, depositing a crystalline diamond on the substrate, sputtering an aluminum layer on the crystalline diamond, where the aluminum layer is greater than 5 nanometers and less than 50 nanometers; and treating a surface of the aluminum layer with an ion beam resulting in a graphene layer on the crystalline diamond.

Abstract: A transparent display includes a display including a transparent substrate and a patterned diamond layer formed on the transparent substrate to at least in part define a diamond waveguide. At least two electronic devices can be connected by the diamond waveguide, and can include a sensor, a transducer, or electronic circuitry, including communication, control, or data processing electronic circuitry.

Abstract: A transparent display includes a display including a transparent substrate and a patterned diamond layer formed on the transparent substrate to at least in part define a diamond waveguide. At least two electronic devices can be connected by the diamond waveguide, and can include a sensor, a transducer, or electronic circuitry, including communication, control, or data processing electronic circuitry.

Abstract: Disclosed herein is method for fabricating a graphene layer on a non-graphene carbon layer including steps of cleaning and seeding a substrate, depositing a crystalline diamond on the substrate, sputtering an aluminum layer on the crystalline diamond, where the aluminum layer is greater than 5 nanometers and less than 50 nanometers; and treating a surface of the aluminum layer with an ion beam resulting in a graphene layer on the crystalline diamond.

Abstract: A transparent display includes a display including a transparent substrate and a patterned diamond layer formed on the transparent substrate to at least in part define a diamond waveguide. At least two electronic devices can be connected by the diamond waveguide, and can include a sensor, a transducer, or electronic circuitry, including communication, control, or data processing electronic circuitry.

Abstract: Disclosed herein is a system and method for transistor pathogen virus detector in which one embodiment may include a substrate layer, a silicon dioxide layer on the substrate layer, a nanocrystalline diamond layer on the silicon dioxide layer, a graphene oxide layer on the nanocrystalline diamond layer, fluorinated graphene oxide portions; and a linker layer, the linker layer including a plurality of pathogen receptors.

Abstract: Disclosed herein is method for fabricating a graphene layer on a non-graphene carbon layer including steps of cleaning and seeding a substrate, depositing a crystalline diamond on the substrate, sputtering an aluminum layer on the crystalline diamond, where the aluminum layer is greater than 5 nanometers and less than 50 nanometers; and treating a surface of the aluminum layer with an ion beam resulting in a graphene layer on the crystalline diamond.

Abstract: A broad band mirror system and method, wherein the system includes a mechanical substrate layer, a reflective metal layer on the mechanical substrate level, and a diamond layer, and the method includes the steps of selecting a sacrificial substrate layer, depositing a diamond layer on the substrate layer, smoothing a first surface of the diamond layer, depositing a reflective metal layer on the diamond layer, bonding a mechanical substrate to the diamond layer, removing the sacrificial substrate level, and smoothing a second diamond surface.

Abstract: Disclosed herein is a broad band mirror system and method, wherein the system includes a mechanical substrate layer, a reflective metal layer on the mechanical substrate level, and a diamond layer, and the method includes the steps of selecting a sacrificial substrate layer, depositing a diamond layer on the substrate layer, smoothing a first surface of the diamond layer, depositing a reflective metal layer on the diamond layer, bonding a mechanical substrate to the diamond layer, removing the sacrificial substrate level, and smoothing a second diamond surface.

Abstract: An adaptive power amplifier that may be used in a wireless communication device is configured to adjust its load line or output impedance, the number of active amplifier cells in each amplification stage, the bias of the active amplifiers, and the supply voltage input capacitive load in accordance with a supply voltage modulation type provided to the power amplifier. The supply voltage modulation types include ET, APT, DC-DC, dual, multi-state or fixed voltage supply voltages. A supply voltage converter, signaled by a baseband processor, generates the selected type of supply voltage modulation for the adaptive power amplifier. The baseband processor may also provide a control interface signal to a controller within the adaptive power amplifier.

Abstract: An adaptive power amplifier that may be used in a wireless communication device is configured to adjust its load line or output impedance, the number of active amplifier cells in each amplification stage, the bias of the active amplifiers, and the supply voltage input capacitive load in accordance with a supply voltage modulation type provided to the power amplifier. The supply voltage modulation types include ET, APT, DC-DC, dual, multi-state or fixed voltage supply voltages. A supply voltage converter, signaled by a baseband processor, generates the selected type of supply voltage modulation for the adaptive power amplifier. The baseband processor may also provide a control interface signal to a controller within the adaptive power amplifier.

Abstract: A method in a wireless communication transmitter including a baseband processor (310) that configures the transmitter for a particular signal configuration, and a headroom controller (350) for adjusting transmitter headroom based on the particular signal configuration. In one embodiment, the headroom is controlled based on a power metric, for example, a 3rd order polynomial or a peak to average ratio (PAR) metric, that is a function of the signal configuration. In another embodiment, the headroom is adjusted using information in a look up table.

Abstract: An apparatus and method for transmission power amplifier bias control in an enhanced data rate for global system mobile evolution mobile communication device. The apparatus can include a transmitter configured to transmit information on an enhanced data rate for global system mobile evolution network at a first transmitter output power. The transmitter can include a modulator configured to receive an input signal and map information in the input signal to symbols represented by eight phase offsets and a power amplifier configured to provide the first transmitter output power for transmitting the symbols represented by eight phase offsets. The apparatus can also include a controller configured to adjust a first bias condition of the power amplifier to a second bias condition based on a changed parameter of operation related to the data stored in a memory.

Abstract: A power amplification circuit (10) includes a scalable power amplifier (20) to produce an RF output signal (50) at an output of the power amplification circuit (10), and a variable impedance circuit (30) coupled to the output of the power amplification circuit (10). The scalable power amplifier (20) includes a plurality of selectively activated amplifier elements (22), (24), (26) to produce the RF output signal (50) in accordance with a desired RF output signal power level. The power amplification circuit (10) selectively activates individual amplifier elements by, for example reducing power or increasing power to at least one amplifier element. The variable impedance circuit (30) varies an impedance of the variable impedance circuit (30) to dynamically load the output of the scalable power amplifier (20).

Abstract: A method in a wireless communication transmitter including a baseband processor (310) that dynamically configures the transmitter for a particular signal configuration, and a headroom controller (350) for adjusting transmitter headroom based on the particular signal configuration. In one embodiment, the PA headroom is controlled based on a power metric, for example, a 3rd order polynomial or peak to average ratio (PAR) metric, that is a function of the signal configuration. In another embodiment the PA headroom is adjusted using information in a look up table.

Abstract: A method for fabricating an RF enhancement mode FET (30) having improved gate properties is provided. The method comprises the steps of providing (131) a substrate (31) having a stack of semiconductor layers (32-35) formed thereon, the stack including a cap layer (35) and a central layer (33) defining a device channel, forming (103) a photoresist pattern (58) over the cap layer, thereby defining a masked region and an unmasked region, and, in any order, (a) creating (105) an implant region (36, 37) in the unmasked region, and (b) removing (107) the cap layer from the unmasked region. By forming the implant region and cap region with no overlap, a device with low current leakage may be achieved.

Abstract: A power amplification circuit (10) includes a scalable power amplifier (20) to produce an RF output signal (50) at an output of the power amplification circuit (10), and a variable impedance circuit (30) coupled to the output of the power amplification circuit (10). The scalable power amplifier (20) includes a plurality of selectively activated amplifier elements (22), (24), (26) to produce the RF output signal (50) in accordance with a desired RF output signal power level. The power amplification circuit (10) selectively activates individual amplifier elements by, for example reducing power or increasing power to at least one amplifier element. The variable impedance circuit (30) varies an impedance of the variable impedance circuit (30) to dynamically load the output of the scalable power amplifier(20).

Abstract: An apparatus and method for transmission power amplifier bias control in an enhanced data rate for global system mobile evolution mobile communication device. The apparatus can include a transmitter configured to transmit information on an enhanced data rate for global system mobile evolution network at a first transmitter output power. The transmitter can include a modulator configured to receive an input signal and map information in the input signal to symbols represented by eight phase offsets and a power amplifier configured to provide the first transmitter output power for transmitting the symbols represented by eight phase offsets. The apparatus can also include a controller configured to adjust a first bias condition of the power amplifier to a second bias condition based on a changed parameter of operation related to the data stored in a memory.

Abstract: A method for fabricating an RF enhancement mode FET (30) having improved gate properties is provided. The method comprises the steps of providing (131) a substrate (31) having a stack of semiconductor layers (32-35) formed thereon, the stack including a cap layer (35) and a central layer (33) defining a device channel, forming (103) a photoresist pattern (58) over the cap layer, thereby defining a masked region and an unmasked region, and, in any order, (a) creating (105) an implant region (36, 37) in the unmasked region, and (b) removing (107) the cap layer from the unmasked region. By forming the implant region and cap region with no overlap, a device with low current leakage may be achieved.