Patents by Inventor Ernesto Gallardo

Ernesto Gallardo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Effect of substrate surface treatment on 193 NM resist processing
    Patent number: 6746973
    Abstract: One aspect of the present invention relates to a system and method for mitigating surface abnormalities on a semiconductor structure. The method involves exposing the layer to a first plasma treatment in order to mitigate surface interactions between the layer and a subsequently formed photoresist without substantially etching the layer, the first plasma comprising oxygen and nitrogen; forming a patterned photoresist over the treated layer, the patterned photoresist being formed using 193 nm or lower radiation; and etching the treated layer through openings of the patterned photoresist. The system and method also includes a monitor processor for determining whether the plasma treatment has been administered and for adjusting the plasma treatment components. The monitor processor transmits a pulse, receives a reflected pulse response and analyzes the response.
    Type: Grant
    Filed: August 5, 2002
    Date of Patent: June 8, 2004
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Catherine B. Labelle, Ernesto Gallardo, Ramkumar Subramanian, Jacques Bertrand
  • Anti-reflective coating layer for semiconductor device
    Patent number: 6191030
    Abstract: In a photo-lithographic step for providing contact points to lower layers of a semiconductor device, an anti-reflective coating (ARC) layer, such as FLARE 2.0™, is used to provide a good contact points to an underlayer. After the contact points are made, the anti-reflective coating layer is removed, with the removal being performed in a same step in which a photo-resist is removed from the semiconductor device. In an alternative configuration, the ARC layer remains in the semiconductor device after the fabrication process is competed, thereby acting as an interlayer dielectric during operation of the semiconductor device.
    Type: Grant
    Filed: November 5, 1999
    Date of Patent: February 20, 2001
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Ramkumar Subramanian, Suzette K. Pangrle, John G. Pellerin, Ernesto A. Gallardo
  • Anti-reflective coating layer for semiconductor device
    Patent number: 5986344
    Abstract: In a photo-lithographic step for providing contact points to lower layers of a semiconductor device, an anti-reflective coating (ARC) layer, such as FLARE 2.0.TM., is used to provide a good contact points to an underlayer. After the contact points are made, the anti-reflective coating layer is removed, with the removal being performed in a same step in which a photo-resist is removed from the semiconductor device. In an alternative configuration, the ARC layer remains in the semiconductor device after the fabrication process is competed, thereby acting as an interlayer dielectric during operation of the semiconductor device.
    Type: Grant
    Filed: April 14, 1998
    Date of Patent: November 16, 1999
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Ramkumar Subramanion, Suzette K. Pangrle, John G. Pellerin, Ernesto A. Gallardo