Abstract: A plasma processing system for cleaning a substrate is provided. The plasma processing system includes a process chamber that includes: a chamber body enclosing an interior volume; and a substrate support disposed in the interior volume. The plasma processing system includes a vacuum pump; a first exhaust line fluidly coupled between the interior volume of the process chamber and the vacuum pump; and a second exhaust line fluidly coupled between the interior volume of the process chamber and the vacuum pump. The first exhaust line and the second exhaust line are arranged to provide alternative paths for the exhaust between the interior volume and the vacuum pump, and the first exhaust line has an internal diameter that is at least 50% smaller than the internal diameter of the second exhaust line.

Abstract: Apparatus for processing a substrate are described herein. More specifically, embodiments described herein relate to separate pre-clean process modules and pre-clean control modules coupled to a cluster tool assembly. Each pre-clean process module and each pre-clean control module are connected by a cable conduit which is configured to have power and control cables passing therethrough between the pre-clean process module and the ore-clean control module. A maintenance passage is formed through the cluster tool assembly. Each of a purge gas source, a process gas source, a manometer, an isolation port, and a throttle valve are all accessible from one side of the pre-clean process module.