Patents by Inventor Ernie J. Caine

Ernie J. Caine has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sub-pixel nBn detector
    Patent number: 9024359
    Abstract: A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a bather layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlPSb, AlGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area.
    Type: Grant
    Filed: January 5, 2012
    Date of Patent: May 5, 2015
    Assignee: Lockheed Martin Corporation
    Inventors: Jeffrey W. Scott, Colin E. Jones, Ernie J. Caine, Charles A. Cockrum
  • SUB-PIXEL NBN DETECTOR
    Publication number: 20130214373
    Abstract: A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a barrier layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlPSb, AlGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area.
    Type: Application
    Filed: January 5, 2012
    Publication date: August 22, 2013
    Inventors: Jeffrey W. SCOTT, Colin E. Jones, Ernie J. Caine, Charles A. Cockrum
  • Sub-pixel NBN detector
    Patent number: 8399910
    Abstract: A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a barrier layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlSb, AlGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area.
    Type: Grant
    Filed: June 3, 2011
    Date of Patent: March 19, 2013
    Assignee: Lockheed Martin Corporation
    Inventors: Jeffrey W. Scott, Colin E. Jones, Ernie J. Caine, Charles A. Cockrum
  • Sub-pixel nBn detector
    Patent number: 8362520
    Abstract: A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a barrier layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlPSb, AlGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area.
    Type: Grant
    Filed: June 1, 2011
    Date of Patent: January 29, 2013
    Assignee: Lockheed Martin Corporation
    Inventors: Jeffrey W. Scott, Colin E. Jones, Ernie J. Caine, Charles A. Cockrum
  • SUB-PIXEL NBN DETECTOR
    Publication number: 20120306039
    Abstract: A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a barrier layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlPSb, AlGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area.
    Type: Application
    Filed: January 5, 2012
    Publication date: December 6, 2012
    Inventors: Jeffrey W. SCOTT, Colin E. Jones, Ernie J. Caine, Charles A. Cockrum
  • SUB-PIXEL NBN DETECTOR
    Publication number: 20120001288
    Abstract: A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a barrier layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlPSb, AlGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area.
    Type: Application
    Filed: June 1, 2011
    Publication date: January 5, 2012
    Inventors: Jeffrey W. Scott, Colin E. Jones, Ernie J. Caine, Charles A. Cockrum
  • Sub-pixel nBn detector
    Patent number: 8044435
    Abstract: A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a barrier layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlPSb, AlGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area.
    Type: Grant
    Filed: November 13, 2007
    Date of Patent: October 25, 2011
    Assignee: Lockheed Martin Corporation
    Inventors: Jeffrey W. Scott, Colin E. Jones, Ernie J. Caine, Charles A. Cockrum
  • SUB-PIXEL NBN DETECTOR
    Publication number: 20110233709
    Abstract: A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a barrier layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlSb, AlGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area.
    Type: Application
    Filed: June 3, 2011
    Publication date: September 29, 2011
    Inventors: Jeffrey W. SCOTT, Colin E. Jones, Ernie J. Caine, Charles A. Cockrum
  • SUB-PIXEL NBN DETECTOR
    Publication number: 20080111152
    Abstract: A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a barrier layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlPSb, AlGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area.
    Type: Application
    Filed: November 13, 2007
    Publication date: May 15, 2008
    Applicant: Lockheed Martin Corporation
    Inventors: Jeffrey W. Scott, Colin E. Jones, Ernie J. Caine, Charles A. Cockrum