Abstract: A method of calcining a raw material to obtain a cementitious material, includes providing a flow of raw material containing a metal carbonate, such as CaCO3 to a calcination system, introducing the flow of raw material into a first thermal reactor and at least partially decarbonating the raw material in the first thermal reactor by subjecting the raw material to a first heat treatment at a first temperature of at least 650° C. in order to obtain an at least partly decarbonated material and CO2, wherein the first thermal reactor is heated by electrical energy, and obtaining the cementitious material as a result of the first heat treatment.

Abstract: A method of producing clinker from cement raw meal, includes preheating cement raw meal in a preheater string, the preheater string including a plurality of preheater stages, pre-calcining preheated raw meal in a pre-calciner to obtain a pre-calcined product, introducing the pre-calcined product into a rotary kiln for calcining the pre-calcined product to obtain cement clinker, wherein a partial flow of at least partly preheated raw meal is diverted from the preheater string, introduced into a calcination device and at least partially decarbonated in the calcination device in order to obtain an at least partially decarbonated product and CO2, wherein the calcination device is heated by electrical energy, and wherein the at least partially decarbonated product is fed into the rotary kiln and the CO2 is drawn off from the calcination device.

Abstract: A method of producing a supplementary cementitious material, includes providing at least one waste material selected from quarry sludge, aggregate washing sludge and road cleaning sludge, removing excess water from said waste material so as to provide a dry waste material, and either: mixing the dry waste material with a source of calcium sulphate to obtain a raw material mixture, and calcining the raw material mixture at a temperature of 700-900° C. to obtain the supplementary cementitious material, or: calcining the dry waste material at a temperature of 700-900° C. to obtain a calcined waste material, and mixing the calcined waste material with a calcined source of calcium sulphate to obtain the supplementary cementitious material.

Abstract: A method of producing cement clinker and a second calcined material, wherein the cement clinker is produced in a first production line and the second calcined material is produced from a raw material in a second production line by carrying out the following procedures e) optionally drying the raw material in a dryer, g) calcining the optionally dried raw material in a rotary kiln to obtain the second calcined material, wherein the sensible heat of a hot gas in the first production line is used as a heat source in the calcining step g) for calcining the raw material, and wherein the rotary kiln exhaust gas coming from the calcining step g) is introduced into the first production line for the secondary combustion of the rotary kiln exhaust gas.

Abstract: A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.

Abstract: A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.

Abstract: A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.

Abstract: A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.

Abstract: A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.

Abstract: A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.