Patents by Inventor Ernst Eiper

Ernst Eiper has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12142527
    Abstract: Speed of plasma etching is regulated in regions prone to over-etching by providing an etch resistant structure, such as a metal saw bow, in the region. By adjusting dimensions, such as the length and width of the saw bow legs and an area defined by the saw bow legs, as well as a shape of the etch region through techniques such as chamfering, plasma etch speed in the region can be controlled with an intent to match the speed of etching in non-over-etched regions.
    Type: Grant
    Filed: June 14, 2023
    Date of Patent: November 12, 2024
    Assignee: NXP B.V.
    Inventors: Antonius Hendrikus Jozef Kamphuis, Ernst Eiper, Johannes Cobussen, Chantal Claude Dijkstra
  • Publication number: 20230326796
    Abstract: Speed of plasma etching is regulated in regions prone to over-etching by providing an etch resistant structure, such as a metal saw bow, in the region. By adjusting dimensions, such as the length and width of the saw bow legs and an area defined by the saw bow legs, as well as a shape of the etch region through techniques such as chamfering, plasma etch speed in the region can be controlled with an intent to match the speed of etching in non-over-etched regions.
    Type: Application
    Filed: June 14, 2023
    Publication date: October 12, 2023
    Inventors: Antonius Hendrikus Jozef Kamphuis, Ernst Eiper, Johannes Cobussen, Chantal Claude Dijkstra
  • Patent number: 11721586
    Abstract: Speed of plasma etching is regulated in regions prone to over-etching by providing an etch resistant structure, such as a metal saw bow, in the region. By adjusting dimensions, such as the length and width of the saw bow legs and an area defined by the saw bow legs, as well as a shape of the etch region through techniques such as chamfering, plasma etch speed in the region can be controlled with an intent to match the speed of etching in non-over-etched regions.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: August 8, 2023
    Assignee: NXP B.V.
    Inventors: Antonius Hendrikus Jozef Kamphuis, Ernst Eiper, Johannes Cobussen, Chantal Dijkstra
  • Publication number: 20210193524
    Abstract: Speed of plasma etching is regulated in regions prone to over-etching by providing an etch resistant structure, such as a metal saw bow, in the region. By adjusting dimensions, such as the length and width of the saw bow legs and an area defined by the saw bow legs, as well as a shape of the etch region through techniques such as chamfering, plasma etch speed in the region can be controlled with an intent to match the speed of etching in non-over-etched regions.
    Type: Application
    Filed: December 19, 2019
    Publication date: June 24, 2021
    Applicant: NXP B.V.
    Inventors: Antonius Hendrikus Jozef Kamphuis, Ernst Eiper, Johannes Cobussen, Chantal Dijkstra
  • Patent number: 9536188
    Abstract: Dual-interface Integrated Circuit (IC) card components and methods for manufacturing the dual-interface IC card components are described. In an embodiment, a dual-interface IC card component includes a single-sided contact base structure, which includes a substrate with an electrical contact layer. On the single-sided contact base structure, one or more antenna contact leads are attached to the single-sided contact base structure to form a dual-interface contact structure by applying an adhesive material to partially cover an overlapping area of the at least one antenna contact and the substrate, which is a component of a dual-interface IC card. Other embodiments are also described.
    Type: Grant
    Filed: April 2, 2015
    Date of Patent: January 3, 2017
    Assignee: NXP B.V.
    Inventors: Patrick Schoengrundner, Ernst Eiper, Christian Zenz
  • Publication number: 20150278674
    Abstract: Dual-interface Integrated Circuit (IC) card components and methods for manufacturing the dual-interface IC card components are described. In an embodiment, a dual-interface IC card component includes a single-sided contact base structure, which includes a substrate with an electrical contact layer. On the single-sided contact base structure, one or more antenna contact leads are attached to the single-sided contact base structure to form a dual-interface contact structure by applying an adhesive material to partially cover an overlapping area of the at least one antenna contact and the substrate, which is a component of a dual-interface IC card. Other embodiments are also described.
    Type: Application
    Filed: April 2, 2015
    Publication date: October 1, 2015
    Applicant: NXP B.V.
    Inventors: Patrick Schoengrundner, Ernst Eiper, Christian Zenz
  • Patent number: 8884415
    Abstract: Various aspects of the disclosure are directed to integrated circuit (IC) die leadframe packages. In accordance with one or more embodiments, a stainless steel leadframe apparatus has a polymer-based layer that adheres to both stainless steel and IC die encapsulation, with the stainless steel conducting signals/data between respective surfaces for communicating with the packaged IC die. In some embodiments, the apparatus includes the IC die adhered to the polymer-based layer via an adhesive, wire bonds coupled to the stainless steel leadframe for passing the signals/data, and an encapsulation epoxy that encapsulates the IC die and wire bonds.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: November 11, 2014
    Assignee: NXP B.V.
    Inventors: Peeradech Khunpukdee, Bodin Kasemset, Ernst Eiper, Christian Zenz
  • Publication number: 20140239471
    Abstract: Various aspects of the disclosure are directed to integrated circuit (IC) die leadframe packages. In accordance with one or more embodiments, a stainless steel leadframe apparatus has a polymer-based layer that adheres to both stainless steel and IC die encapsulation, with the stainless steel conducting signals/data between respective surfaces for communicating with the packaged IC die. In some embodiments, the apparatus includes the IC die adhered to the polymer-based layer via an adhesive, wire bonds coupled to the stainless steel leadframe for passing the signals/data, and an encapsulation epoxy that encapsulates the IC die and wire bonds.
    Type: Application
    Filed: February 28, 2013
    Publication date: August 28, 2014
    Applicant: NXP B.V.
    Inventors: Peeradech Khunpukdee, Bodin Kasemset, Ernst Eiper, Christian Zenz