Patents by Inventor Ernst Feuchtinger

Ernst Feuchtinger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor wafer with improved flatness, and process for producing the semiconductor wafer
    Patent number: 6583050
    Abstract: A semiconductor wafer has a front surface and a back surface and flatness values based on partial areas of a surface grid on the front surface of the semiconductor wafer, which has a maximum local flatness value SFQRmax of less than or equal to 0.13 &mgr;m and individual SFQR values which in a peripheral area of the semiconductor wafer do not differ significantly from those in a central area of the semiconductor wafer. There is also a process for producing this semiconductor wafer, wherein the starting thickness of the semiconductor wafer is 20 to 200 &mgr;m greater than the thickness of the carrier and the semiconductor wafer is polished until the end thickness of the semiconductor wafer is 2 to 20 &mgr;m greater than the thickness of the carrier.
    Type: Grant
    Filed: August 13, 2002
    Date of Patent: June 24, 2003
    Assignee: Wacker Siltronic Gesellschaft F{dot over (u)}r Halbleitermaterialien AG
    Inventors: Guido Wenski, Thomas Altmann, Ernst Feuchtinger, Willibald Bernwinkler, Wolfgang Winkler, Gerhard Heier
  • Semiconductor wafer with improved flatness, and process for producing the semiconductor wafer
    Publication number: 20030045089
    Abstract: A semiconductor wafer has a front surface and a back surface and flatness values based on partial areas of a surface grid on the front surface of the semiconductor wafer, which has a maximum local flatness value SFQRmax of less than or equal to 0.13 &mgr;m and individual SFQR values which in a peripheral area of the semiconductor wafer do not differ significantly from those in a central area of the semiconductor wafer. There is also a process for producing this semiconductor wafer, wherein the starting thickness of the semiconductor wafer is 20 to 200 &mgr;m greater than the thickness of the carrier and the semiconductor wafer is polished until the end thickness of the semiconductor wafer is 2 to 20 &mgr;m greater than the thickness of the carrier.
    Type: Application
    Filed: August 13, 2002
    Publication date: March 6, 2003
    Applicant: Wacker Siltronic Gesellschaft Fur Halbleitermaterialien AG
    Inventors: Guido Wenski, Thomas Altmann, Ernst Feuchtinger, Willibald Bernwinkler, Wolfgang Winkler, Gerhard Heier
  • Semiconductor wafer with improved flatness, and process for producing the semiconductor wafer
    Patent number: 6458688
    Abstract: A semiconductor wafer has a front surface and a back surface and flatness values based on partial areas of a surface grid on the front surface of the semiconductor wafer, which has a maximum local flatness value SFQRmax of less than or equal to 0.13 &mgr;m and individual SFQR values which in a peripheral area of the semiconductor wafer do not differ significantly from those in a central area of the semiconductor wafer. There is also a process for producing this semiconductor wafer, wherein the starting thickness of the semiconductor wafer is 20 to 200 &mgr;m greater than the thickness of the carrier and the semiconductor wafer is polished until the end thickness of the semiconductor wafer is 2 to 20 &mgr;m greater than the thickness of the carrier.
    Type: Grant
    Filed: January 27, 2000
    Date of Patent: October 1, 2002
    Assignee: Wacker Siltronic Gesellschaft für Halbleiter-Materialien AG
    Inventors: Guido Wenski, Thomas Altmann, Ernst Feuchtinger, Willibald Bernwinkler, Wolfgang Winkler, Gerhard Heier
  • Method for manufacturing a semiconductor wafer which is coated on one side and provided with a finish
    Patent number: 6051498
    Abstract: A method for manufacturing a semiconductor wafer which is coated on one s and provided with a finish has a) the semiconductor wafer being subjected to a first treatment (double-sided finish) which produces a finish on both sides of the semiconductor wafer at the same time; has b) at least one coating being produced on one side of the semiconductor wafer; and has c) the semiconductor wafer being subjected to a second treatment which produces a double-sided finish.
    Type: Grant
    Filed: January 6, 1998
    Date of Patent: April 18, 2000
    Assignee: Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
    Inventors: Georg Pietsch, Bernd Sauter, Ernst Feuchtinger
  • Method and device for removing a semiconductor wafer from a flat substrate
    Patent number: 5952242
    Abstract: A means for removing a semiconductor wafer from a flat substrate uses a device for removing a semiconductor wafer from a polishing cloth of a double side polishing machine. The method has a liquid being pressed through the substrate against the semiconductor wafer lying on the substrate, such that the semiconductor wafer is lifted up from the substrate by the action of the liquid. Then the wafer is picked up by a pick-up device.
    Type: Grant
    Filed: October 21, 1997
    Date of Patent: September 14, 1999
    Assignee: Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
    Inventors: Georg Pietsch, Ernst Feuchtinger