Patents by Inventor Ernst-Otto Andersen

Ernst-Otto Andersen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method of making same
    Patent number: 9299712
    Abstract: A semiconductor device and method of making a semiconductor device are disclosed. A semiconductor body, a floating gate poly and a source/drain region are provided. A metal interconnect region with a control gate node is provided that capacitively couples to the floating gate poly.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: March 29, 2016
    Assignee: Infineon Technologies AG
    Inventors: Georg Tempel, Ernst-Otto Andersen, Achim Gratz
  • Semiconductor Device and Method of Making Same
    Publication number: 20150129950
    Abstract: A semiconductor device and method of making a semiconductor device are disclosed. A semiconductor body, a floating gate poly and a source/drain region are provided. A metal interconnect region with a control gate node is provided that capacitively couples to the floating gate poly.
    Type: Application
    Filed: December 19, 2014
    Publication date: May 14, 2015
    Inventors: Georg Tempel, Ernst-Otto Andersen, Achim Gratz
  • Method of making semiconductor device
    Patent number: 8940603
    Abstract: A semiconductor device and method of making a semiconductor device are disclosed. A semiconductor body, a floating gate poly and a source/drain region are provided. A metal interconnect region with a control gate node is provided that capacitively couples to the floating gate poly.
    Type: Grant
    Filed: July 20, 2012
    Date of Patent: January 27, 2015
    Assignee: Infineon Technologies AG
    Inventors: Georg Tempel, Ernst-Otto Andersen, Achim Gratz
  • Semiconductor Device and Method of Making Same
    Publication number: 20120289010
    Abstract: A semiconductor device and method of making a semiconductor device are disclosed. A semiconductor body, a floating gate poly and a source/drain region are provided. A metal interconnect region with a control gate node is provided that capacitively couples to the floating gate poly.
    Type: Application
    Filed: July 20, 2012
    Publication date: November 15, 2012
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Georg Tempel, Ernst-Otto Andersen, Achim Gratz
  • Semiconductor device and method of making same
    Patent number: 8247861
    Abstract: A semiconductor device and method of making a semiconductor device are disclosed. A semiconductor body, a floating gate poly and a source/drain region are provided. A metal interconnect region with a control gate node is provided that capacitively couples to the floating gate poly.
    Type: Grant
    Filed: July 18, 2007
    Date of Patent: August 21, 2012
    Assignee: Infineon Technologies AG
    Inventors: Georg Tempel, Ernst-Otto Andersen, Achim Gratz
  • Semiconductor Device and Method of Making Same
    Publication number: 20090020800
    Abstract: A semiconductor device and method of making a semiconductor device are disclosed. A semiconductor body, a floating gate poly and a source/drain region are provided. A metal interconnect region with a control gate node is provided that capacitively couples to the floating gate poly.
    Type: Application
    Filed: July 18, 2007
    Publication date: January 22, 2009
    Inventors: Georg Tempel, Ernst-Otto Andersen, Achim Gratz