Abstract: An integrated circuit device and a method for providing distributed voltage regulation. The device includes a plurality of memory cell arrays and access circuitry dependent on one or more regulated voltages generated on the device and a plurality of pulsed digital distributed output units configured to generate the one or more regulated voltages. The device also includes a voltage regulator control logic configured to generate one or more control signals to control the distributed output units based, at least in part, on a comparison between one or more reference voltages and the one or more regulated voltages.

Abstract: An integrated circuit includes a decoupling capacitor configured to be enabled in response to the decoupling capacitor not increasing a standby current of the integrated circuit and disabled in response to the decoupling capacitor increasing the standby current of the integrated circuit.

Abstract: A method of testing internal signals of a memory for timing marginalities which may result in unstable operation includes: delaying internal address signals of the memory by an amount great enough so that data cannot be validly written to and read from memory locations which are accessed by address signals having timing marginalities which are delayed but small enough so that data can be validly written to and read from memory locations which are accessed by address signals not having such timing marginalities which are delayed. Data is then written to and read from memory locations which are accessed by delayed address signals, and a determination is made as to whether the data read from any memory location does not correspond with the data written to such memory location.

Abstract: A system includes a charge pump configured to provide a boosted voltage, a voltage source configured to provide a voltage less than the boosted voltage, and a load. The system includes a coupling capacitance coupled to the load, a first switch coupled between the charge pump and the load, and a second switch coupled between the voltage source and the load.

Abstract: A method of testing internal signals of a memory for timing marginalities which may result in unstable operation includes: delaying internal address signals of the memory by an amount great enough so that data cannot be validly written to and read from memory locations which are accessed by address signals having timing marginalities which are delayed but small enough so that data can be validly written to and read from memory locations which are accessed by address signals not having such timing marginalities which are delayed. Data is then written to and read from memory locations which are accessed by delayed address signals, and a determination is made as to whether the data read from any memory location does not correspond with the data written to such memory location.

Abstract: An integrated circuit chip including a first delay circuit and a second delay circuit. The first delay circuit has a first delay circuit topology configured to delay a signal a first delay. The second delay circuit has a second delay circuit topology configured to provide a second delay in a circuit loop that is configured to be monitored and provide an oscillating signal. The second delay circuit topology is substantially the same as the first delay circuit topology and the first delay circuit is configured to be trimmed to adjust the first delay based on the second delay and the oscillating signal.

Abstract: An integrated circuit chip including a first delay circuit and a second delay circuit. The first delay circuit has a first delay circuit topology configured to delay a signal a first delay. The second delay circuit has a second delay circuit topology configured to provide a second delay in a circuit loop that is configured to be monitored and provide an oscillating signal. The second delay circuit topology is substantially the same as the first delay circuit topology and the first delay circuit is configured to be trimmed to adjust the first delay based on the second delay and the oscillating signal.

Abstract: A reference circuit that includes a first circuit configured to provide a temperature dependent current, a second circuit configured to provide a first current, and a third circuit. The third circuit is configured to provide a temperature dependent voltage based on the first current and the temperature dependent current. The temperature dependent voltage has a voltage versus temperature slope established by the third circuit and a voltage level established by the first current.

Abstract: A semiconductor packaging arrangement, or module, includes a printed circuit board having an electrical interconnect thereon and a semiconductor package mounted to the printed circuit board. The semiconductor package includes a fractional portion of a semiconductor wafer having a plurality of integrated circuit chips thereon, such chips being separated by regions in the fractional portion of the wafer. The fractional portion of the wafer has a plurality of electrical contacts electrically connected to the chips. The package also includes a dielectric member having an electrical conductor thereon. The electrical conductor are electrically connected to the plurality of electrical contacts of the plurality of chips to electrically interconnect such plurality of chips with portions of the electrical conductor spanning the regions in the fractional portion of the wafer.

Abstract: A semiconductor packaging arrangement, or module, includes a printed circuit board having an electrical interconnect thereon and a semiconductor package mounted to the printed circuit board. The semiconductor package includes a fractional portion of a semiconductor wafer having a plurality of integrated circuit chips thereon, such chips being separated by regions in the fractional portion of the wafer. The fractional portion of the wafer has a plurality of electrical contacts electrically connected to the chips. The package also includes a dielectric member having an electrical conductor thereon. The electrical conductor are electrically connected to the plurality of electrical contacts of the plurality of chips to electrically interconnect such plurality of chips with portions of the electrical conductor spanning the regions in the fractional portion of the wafer.

Abstract: A semiconductor packaging arrangement, or module, includes a printed circuit board having an electrical interconnect thereon and a semiconductor package mounted to the printed circuit board. The semiconductor package includes a fractional portion of a semiconductor wafer having a plurality of integrated circuit chips thereon, such chips being separated by regions in the fractional portion of the wafer. The fractional portion of the wafer has a plurality of electrical contacts electrically connected to the chips. The package also includes a dielectric member having an electrical conductor thereon. The electrical conductor are electrically connected to the plurality of electrical contacts of the plurality of chips to electrically interconnect such plurality of chips with portions of the electrical conductor spanning the regions in the fractional portion of the wafer.

Abstract: A memory device and method of manufacturing thereof having a voltage regulator with distributed output transistor. A novel approach for the bitline high voltage (VBLH) generation is used to save chip area by allowing narrower power bussing. The output transistor is distributed along the array edge. In addition, the transistor is divided into sections with different channel widths to compensate for current drive losses due to voltage drops along the VDD power bus. The IR-drop on the VBLH line is eliminated, and a constant output voltage is provided along the array edge.

Abstract: A semiconductor packaging arrangement, or module, includes a printed circuit board having an electrical interconnect thereon and a semiconductor package mounted to the printed circuit board. The semiconductor package includes a fractional portion of a semiconductor wafer having a plurality of integrated circuit chips thereon, such chips being separated by regions in the fractional portion of the wafer. The fractional portion of the wafer has a plurality of electrical contacts electrically connected to the chips. The package also includes a dielectric member having an electrical conductor thereon. The electrical conductor are electrically connected to the plurality of electrical contacts of the plurality of chips to electrically interconnect such plurality of chips with portions of the electrical conductor spanning the regions in the fractional portion of the wafer.

Abstract: A memory device and method of manufacturing thereof having a voltage regulator with distributed output transistors. A novel approach for the bitline high voltage (VBLH) generation is used to save chip area by allowing narrower power bussing. The output transistor is distributed along the array edge. In addition, the transistor is divided into sections with different channel widths to compensate for current drive losses due to voltage drops along the VDD power bus. The IR-drop on the VBLH line is eliminated, and a constant output voltage is provided along the array edge.