Abstract: Using a photolithographic projection apparatus a mask having a pattern is imaged on a photosensitive layer coating a semiconductor substrate by a projection lens. To improve the resolving capability and to obviate adverse effects, e.g. standing waves and inhomogeneous exposure, the space between the substrate and the adjacent boundary face of a projection lens is filled during exposure with a transparent liquid having the same refractive index as the photosensitive layer.

Abstract: An arrangement for projection copying of masks onto a workpiece, in particular onto a semiconductor substrate for producing integrated circuits, wherein the images of the patterns of the masks are formed by a projection lens on a photosensitive layer on the workpiece. The projection lens is completely corrected at the exposure wavelength used, and alignment patterns of the mask are aligned relative to adjustment marks on the workpiece, after images of the alignment pattern and the adjustment mark have been formed in the same plane, with adjustment exposure, by the projection lens and possibly an auxiliary optical means.

Abstract: In a photolithographic method for the manufacture of integrated circuits a mask having a pattern is imaged on a photosensitive layer coating a semiconductor substrate by a projection lens. To improve the resolving capability and to obviate adverse effects, e.g. standing waves and inhomogeneous exposure, the space between the substrate and the adjacent boundary face of a projection lens is filled during exposure with a transparent liquid having the same refractive index as the photosensitive layer.