Patents by Inventor Ernult Franck Gerard

Ernult Franck Gerard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11659779
    Abstract: Various embodiments may provide a memory cell. The memory cell may include an active electrode including an active electrode material. The memory cell may also include a first noble electrode contact with the active electrode, the first noble electrode being a patterned electrode including a noble electrode material. The memory cell may further include a resistive switching layer in contact with the active electrode and the first noble electrode. The memory cell may additionally include a second noble electrode including a noble electrode material, the second noble electrode in contact with the resistive switching layer.
    Type: Grant
    Filed: March 8, 2019
    Date of Patent: May 23, 2023
    Assignees: Agency for Science, Technology and Research, National University of Singapore
    Inventors: Wen Xiao, Wendong Song, Jun Ding, Ernult Franck Gerard
  • Publication number: 20210013407
    Abstract: Various embodiments may provide a memory cell. The memory cell may include an active electrode including an active electrode material. The memory cell may also include a first noble electrode contact with the active electrode, the first noble electrode being a patterned electrode including a noble electrode material. The memory cell may further include a resistive switching layer in contact with the active electrode and the first noble electrode. The memory cell may additionally include a second noble electrode including a noble electrode material, the second noble electrode in contact with the resistive switching layer.
    Type: Application
    Filed: March 8, 2019
    Publication date: January 14, 2021
    Inventors: Wen Xiao, Wendong Song, Jun Ding, Ernult Franck Gerard