Abstract: An electroetching process of the present invention uses a multiphase environment for planarizing a wafer with conductive surface having a non-uniform topography. The multiphase environment includes a high resistance phase and an etching solution phase. The conductive surface to be planarized is placed in the high resistance phase and adjacent a phase interface between the high resistance phase and the etching solution phase. A wiper is used to mechanically move the thin high resistance phase covering the conductive surface so that the raised regions of the non-planar conductive surface is briefly exposed to etching solution phase. The mechanical action of the wiper does not disturb the high resistivity phase filling the rescessed regions of the surface. As the raised surface locations are exposed, the etching solution phase contacts and electroetch the exposed regions of the raised regions until the surface planarized.

Abstract: A method for removing gas bubbles from a surface of a wafer is provided. Removal process is performed as the wafer surface is placed into a process solution for an electrochemical process. As the wafer surface is placed into the solution and moved towards a pressure barrier placed into the solution, a process solution flow between the wafer surface and the pressure barrier is induced to remove gas bubbles from the wafer surface.

Abstract: An electroetching process of the present invention uses a multiphase environment for planarizing a wafer with conductive surface having a non-uniform topography. The multiphase environment includes a high resistance phase and an etching solution phase. The conductive surface to be planarized is placed in the high resistance phase and adjacent a phase interface between the high resistance phase and the etching solution phase. A wiper is used to mechanically move the thin high resistance phase covering the conductive surface so that the raised regions of the non-planar conductive surface is briefly exposed to etching solution phase. The mechanical action of the wiper does not disturb the high resistivity phase filling the rescessed regions of the surface. As the raised surface locations are exposed, the etching solution phase contacts and electroetch the exposed regions of the raised regions until the surface planarized.