Patents by Inventor Erol Girt

Erol Girt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10446208
    Abstract: A magnetic device comprising having a first magnetic layer having a first magnetization direction, a second magnetic layer having a second magnetization direction, a first coupling layer interposed between the first and second magnetic layers, a third magnetic layer having a third magnetization direction, a first magnetoresistive layer interposed between the third magnetic layer and the second magnetic layer, and a circuit connected to one or more of the layers of the magnetic device by at least a pair of leads. The circuit is configured to determine a change in resistance between the pair of leads. The change in resistance is based at least in part on a change in an angular relationship between the third magnetization direction and the second magnetization direction caused by an external magnetic field or a current passing through at least a portion of the device.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: October 15, 2019
    Assignee: Simon Fraser University
    Inventors: Zachary Raymond Nunn, Erol Girt
  • Publication number: 20190221246
    Abstract: A magnetic device comprising having a first magnetic layer having a first magnetization direction, a second magnetic layer having a second magnetization direction, a first coupling layer interposed between the first and second magnetic layers, a third magnetic layer having a third magnetization direction, a first magnetoresistive layer interposed between the third magnetic layer and the second magnetic layer, and a circuit connected to one or more of the layers of the magnetic device by at least a pair of leads. The circuit is configured to determine a change in resistance between the pair of leads. The change in resistance is based at least in part on a change in an angular relationship between the third magnetization direction and the second magnetization direction caused by an external magnetic field or a current passing through at least a portion of the device.
    Type: Application
    Filed: December 20, 2018
    Publication date: July 18, 2019
    Inventors: Zachary Raymond NUNN, Erol GIRT
  • Patent number: 10204671
    Abstract: A magnetic device comprising having a first magnetic layer having a first magnetization direction, a second magnetic layer having a second magnetization direction, a first coupling layer interposed between the first and second magnetic layers, a third magnetic layer having a third magnetization direction, a first magnetoresistive layer interposed between the third magnetic layer and the second magnetic layer, and a circuit connected to one or more of the layers of the magnetic device by at least a pair of leads. The circuit is configured to determine a change in resistance between the pair of leads. The change in resistance is based at least in part on a change in an angular relationship between the third magnetization direction and the second magnetization direction caused by an external magnetic field or a current passing through at least a portion of the device.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: February 12, 2019
    Assignee: Simon Fraser University
    Inventors: Zachary Raymond Nunn, Erol Girt
  • Publication number: 20180261271
    Abstract: A magnetic device comprising having a first magnetic layer having a first magnetization direction, a second magnetic layer having a second magnetization direction, a first coupling layer interposed between the first and second magnetic layers, a third magnetic layer having a third magnetization direction, a first magnetoresistive layer interposed between the third magnetic layer and the second magnetic layer, and a circuit connected to one or more of the layers of the magnetic device by at least a pair of leads. The circuit is configured to determine a change in resistance between the pair of leads. The change in resistance is based at least in part on a change in an angular relationship between the third magnetization direction and the second magnetization direction caused by an external magnetic field or a current passing through at least a portion of the device.
    Type: Application
    Filed: March 12, 2018
    Publication date: September 13, 2018
    Inventors: Zachary Raymond Nunn, Erol Girt
  • Patent number: 9728216
    Abstract: A ferromagnetically coupled magnetic recording medium having a first ferromagnetic layer, a second ferromagnetic layer, and a ferromagnetic coupling layer to ferromagnetically couple the first ferromagnetic layer to the second ferromagnetic layer is used as stable magnetic media with high MrT in high density recording hard drives. The first ferromagnetic layer is the stabilization layer and the second ferromagnetic layer is the main recording layer. The ferromagnetic coupling layer comprises a conductive material having a thickness which produces ferromagnetic coupling between said first ferromagnetic layer and said second ferromagnetic layer via the RKKY interaction.
    Type: Grant
    Filed: August 18, 2014
    Date of Patent: August 8, 2017
    Assignee: Seagate Technology LLC
    Inventors: Erol Girt, Mariana Rodica Munteanu, Hans Jurgen Richter, Felix Trejo
  • Patent number: 9449979
    Abstract: A new form of a solid-state non-volatile memory cell is presented. The solid-state memory cell comprises a series of different layers of ferroelectric materials, semiconductors, ferroelectric semiconductors, metals, and ceramics, and oxides. The memory device stores information in the direction and magnitude of polarization of the ferroelectric layers. Additionally, a method is presented for storing multiple bits of information in a single memory cell by allowing partial polarization of a single ferroelectric layer and stacking of multiple ferroelectric functional units on top of each other. Additionally, a technique for reading and writing said memory cell is presented. Additionally, the memory cell design allows for the formation of Schottky barriers which act to improve functionality and increase resistance. Additionally, a method is presented for depositing textured lithium niobate thin films.
    Type: Grant
    Filed: October 22, 2015
    Date of Patent: September 20, 2016
    Inventors: Thomas J McKinnon, Erol Girt
  • Publication number: 20160172365
    Abstract: A new form of a solid-state non-volatile memory cell is presented. The solid-state memory cell comprises a series of different layers of ferroelectric materials, semiconductors, ferroelectric semiconductors, metals, and ceramics, and oxides. The memory device stores information in the direction and magnitude of polarization of the ferroelectric layers. Additionally, a method is presented for storing multiple bits of information in a single memory cell by allowing partial polarization of a single ferroelectric layer and stacking of multiple ferroelectric functional units on top of each other. Additionally, a technique for reading and writing said memory cell is presented. Additionally, the memory cell design allows for the formation of Schottky barriers which act to improve functionality and increase resistance. Additionally, a method is presented for depositing textured lithium niobate thin films.
    Type: Application
    Filed: October 22, 2015
    Publication date: June 16, 2016
    Inventors: Thomas J. McKinnon, Erol Girt
  • Patent number: 9311948
    Abstract: A perpendicular magnetic recording layer of a magnetic recording medium includes a plurality of bit-patterned magnetic islands, wherein each of the plurality of islands overlay a soft magnetic under-layer. Each of the magnetic islands includes a first magnetic sub-layer adjacent a second magnetic sub-layer, wherein the first sub-layer has a relatively high magnetic anisotropy that is greater than a magnetic anisotropy of the second sub-layer. The magnetic recording layer further includes a third sub-layer, which extends to connect each of the plurality of islands. The third sub-layer may have a magnetic anisotropy that is less than that of the second sub-layer of each of the magnetic islands and/or may serve as an interlayer, extending between the first sub-layer and the soft magnetic under-layer of the recording medium, and having a structure to help to produce the greater anisotropy first magnetic sub-layer.
    Type: Grant
    Filed: December 31, 2008
    Date of Patent: April 12, 2016
    Assignee: Seagate Technology LLC
    Inventors: Erol Girt, Dieter K. Weller, Alexander Y. Dobin, Bogdan F. Valcu, Thomas F. Ambrose, Yingguo Peng, Yukiko A. Kubota, Abebe Hailu
  • Publication number: 20150337434
    Abstract: In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu1-x(Se1-y-zSyTez)x, wherein the value of x is greater than or equal to approximately 0.5, the value of y is between approximately 0 and approximately 1, the value of z is between approximately 0 and approximately 1, and the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition.
    Type: Application
    Filed: August 3, 2015
    Publication date: November 26, 2015
    Inventors: Mariana MUNTEANU, Brian Josef BARTHOLOMEUSZ, Michael BARTHOLOMEUSZ, Erol GIRT
  • Patent number: 9123844
    Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer is disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited.
    Type: Grant
    Filed: April 22, 2013
    Date of Patent: September 1, 2015
    Assignee: ZETTA RESEARCH AND DEVELOPMENT LLC—AQT SERIES
    Inventors: Mariana R. Munteanu, Erol Girt
  • Patent number: 9103000
    Abstract: In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu1-x(Se1-y-zSyTez)x, wherein the value of x is greater than or equal to approximately 0.5, the value of y is between approximately 0 and approximately 1, the value of z is between approximately 0 and approximately 1, and the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition.
    Type: Grant
    Filed: November 23, 2010
    Date of Patent: August 11, 2015
    Assignee: ZETTA RESEARCH AND DEVELOPMENT LLC—AQT SERIES
    Inventors: Mariana Munteanu, Brian Josef Bartholomeusz, Michael Bartholomeusz, Erol Girt
  • Publication number: 20150187572
    Abstract: An interlayer structure that, in one implementation, includes a combination of an amorphous or nano-crystalline seed-layer, and one or more metallic layers, deposited on the seed layer, with the fcc, hcp or bcc crystal structure is used to epitaxially orient a semiconductor layer on top of non-single-crystal substrates. In some implementations, this interlayer structure is used to establish epitaxial growth of multiple semiconductor layers, combinations of semiconductor and oxide layers, combinations of semiconductor and metal layers and combination of semiconductor, oxide and metal layers. This interlayer structure can also be used for epitaxial growth of p-type and n-type semiconductors in photovoltaic cells.
    Type: Application
    Filed: March 16, 2015
    Publication date: July 2, 2015
    Inventors: Erol GIRT, Mariana Rodica MUNTEANU
  • Publication number: 20150179868
    Abstract: In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the sputtering of each of one or more of the absorber layers, and the sputtering of at least one of the absorber layers is performed in a sputtering atmosphere having a pressure of at least 0.5 Pascals. Additionally, in a particular embodiment, the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te).
    Type: Application
    Filed: March 2, 2015
    Publication date: June 25, 2015
    Inventors: Mariana Rodica MUNTEANU, Erol GIRT
  • Patent number: 8981211
    Abstract: An interlayer structure that, in one implementation, includes a combination of an amorphous or nano-crystalline seed-layer, and one or more metallic layers, deposited on the seed layer, with the fcc, hcp or bcc crystal structure is used to epitaxially orient a semiconductor layer on top of non-single-crystal substrates. In some implementations, this interlayer structure is used to establish epitaxial growth of multiple semiconductor layers, combinations of semiconductor and oxide layers, combinations of semiconductor and metal layers and combination of semiconductor, oxide and metal layers. This interlayer structure can also be used for epitaxial growth of p-type and n-type semiconductors in photovoltaic cells.
    Type: Grant
    Filed: March 17, 2009
    Date of Patent: March 17, 2015
    Assignee: Zetta Research and Development LLC—AQT Series
    Inventors: Erol Girt, Mariana Rodica Munteanu
  • Patent number: 8969719
    Abstract: In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the sputtering of each of one or more of the absorber layers, and the sputtering of at least one of the absorber layers is performed in a sputtering atmosphere having a pressure of at least 0.5 Pascals. Additionally, in a particular embodiment, the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te).
    Type: Grant
    Filed: December 18, 2009
    Date of Patent: March 3, 2015
    Assignee: Zetta Research and Development LLC—AQT Series
    Inventors: Mariana Rodica Munteanu, Erol Girt
  • Publication number: 20140356649
    Abstract: A ferromagnetically coupled magnetic recording medium having a first ferromagnetic layer, a second ferromagnetic layer, and a ferromagnetic coupling layer to ferromagnetically couple the first ferromagnetic layer to the second ferromagnetic layer is used as stable magnetic media with high MrT in high density recording hard drives. The first ferromagnetic layer is the stabilization layer and the second ferromagnetic layer is the main recording layer. The ferromagnetic coupling layer comprises a conductive material having a thickness which produces ferromagnetic coupling between said first ferromagnetic layer and said second ferromagnetic layer via the RKKY interaction.
    Type: Application
    Filed: August 18, 2014
    Publication date: December 4, 2014
    Inventors: Erol Girt, Mariana Rodica Munteanu, Hans Jurgen Richter, Felix Trejo
  • Publication number: 20140287268
    Abstract: Provided herein is an apparatus, including a plurality of spaced apart perpendicular magnetic elements. Each of the magnetic elements includes a respective discrete magnetic domain and each of the magnetic elements includes a magnetic recording layer comprising a Co1-x-yPtxCry alloy material, where 0.05?x?0.35 and 0?y?0.15.
    Type: Application
    Filed: February 12, 2014
    Publication date: September 25, 2014
    Applicant: Seagate Technology LLC
    Inventors: Dieter K. Weller, Hans J. Richter, Samuel D. Harkness, IV, Erol Girt
  • Patent number: 8771848
    Abstract: A bit patterned magnetic recording medium, comprises a non-magnetic substrate having a surface; a plurality of spaced apart magnetic elements on the surface, each of the elements constituting a discrete magnetic domain or bit; and a layer of a ferromagnetic material for regulating magnetic exchange coupling between said magnetic elements. The layer has a saturation magnetization Ms ranging from about 1 to about 2,000 emu/cm3, preferably below about 400 emu/cm3, more preferably below about 200 emu/cm3, and may overlie, underlie, or at least partially fill spaces between adjacent magnetic elements.
    Type: Grant
    Filed: October 10, 2006
    Date of Patent: July 8, 2014
    Assignee: Seagate Technology LLC
    Inventors: Erol Girt, Hans J. Richter, Alexander Y. Dobin
  • Patent number: 8709619
    Abstract: A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: April 29, 2014
    Assignee: Seagate Technology LLC
    Inventors: Erol Girt, Hans Jurgen Richter, Mariana R. Munteanu, Thomas Nolan
  • Patent number: 8673464
    Abstract: A low-coupling perpendicular magnetic recording media comprising a magnetic storage layer and at least one low saturation magnetization layer. The magnetic storage layer has a saturation magnetization between about 400-900 emu/cm3 and the at least one low saturation magnetization layer has a saturation magnetization below that of the magnetic storage layer.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: March 18, 2014
    Assignee: Seagate Technology LLC
    Inventors: Erol Girt, Hans Jurgen Richter, Mariana R. Munteanu, Thomas Nolan