Patents by Inventor Eron Sharon

Eron Sharon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9070472
    Abstract: A non-volatile memory has its cells' thresholds programmed within any one of a first set of voltage bands partitioned by a first set of reference thresholds across a threshold window. Hard bits are obtained when read relative to the first set of reference thresholds. The cells are read at a higher resolution relative to a second set of reference thresholds so as to provide additional soft bits for error correction. The soft bits are generated by a combination of a first modulation of voltage on a current word line WLn and a second modulation of voltage on an adjacent word line WLn+1, as in a reading scheme known as “Direct-Lookahead (DLA)”.
    Type: Grant
    Filed: July 29, 2013
    Date of Patent: June 30, 2015
    Assignee: SANDISK IL LTD
    Inventors: Idan Alrod, Eron Sharon, Toru Miwa, Gerrit Jan Hemink, Nima Mokhlesi
  • Publication number: 20130308381
    Abstract: A non-volatile memory has its cells' thresholds programmed within any one of a first set of voltage bands partitioned by a first set of reference thresholds across a threshold window. Hard bits are obtained when read relative to the first set of reference thresholds. The cells are read at a higher resolution relative to a second set of reference thresholds so as to provide additional soft bits for error correction. The soft bits are generated by a combination of a first modulation of voltage on a current word line WLn and a second modulation of voltage on an adjacent word line WLn+1, as in a reading scheme known as “Direct-Lookahead (DLA)”.
    Type: Application
    Filed: July 29, 2013
    Publication date: November 21, 2013
    Applicant: SanDisk IL Ltd.
    Inventors: Idan Alrod, Eron Sharon, Toru Miwa, Gerrit Jan Hemink, Nima Mokhlesi