Abstract: Embodiments described herein provide methods for processing a substrate. One embodiment comprises positioning a substrate in a processing region of a processing chamber, exposing a surface of the substrate disposed in the processing chamber to an oxygen containing gas to form a first oxygen containing layer on the surface, removing at least a portion of the first oxygen containing layer to expose at least a portion of the surface of the substrate, and exposing the surface of the substrate to an oxygen containing gas to form a second oxygen containing layer on the surface.

Abstract: Methods and apparatus for deposition of materials on a substrate are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein to support a processing surface of a substrate, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector is positioned to provide the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface of the substrate, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.

Abstract: Apparatus for processing substrates are provided. In some embodiments, a processing system may include a first transfer chamber and a first process chamber coupled to the transfer chamber, the process chamber further comprising a substrate support to support a processing surface of a substrate within the process chamber, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector provides the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.

Abstract: Embodiments of chemical delivery systems disclosed herein may include an enclosure; a first compartment disposed within the enclosure and having a plurality of first conduits to carry a first set of chemical species, the first compartment further having a first draw opening and a first exhaust opening to facilitate flow of a purge gas through the first compartment; and a second compartment disposed within the enclosure and having a plurality of second conduits to carry a second set of chemical species, the second compartment further having a second draw opening and a second exhaust opening to facilitate flow of the purge gas through the second compartment, wherein the first set of chemical species is different than the second set of chemical species, and wherein a draw velocity of the purge gas through the second compartment is higher than the draw velocity of the purge gas through the first compartment.

Abstract: A method and apparatus for forming heterojunction stressor layers is described. A germanium precursor and a metal precursor are provided to a chamber, and an epitaxial layer of germanium-metal alloy formed on the substrate. The metal precursor is typically a metal halide, which may be provided by subliming a solid metal halide or by contacting a pure metal with a halogen gas. The precursors may be provided through a showerhead or through a side entry point, and an exhaust system coupled to the chamber may be separately heated to manage condensation of exhaust components.

Abstract: Methods for removing residue from interior surfaces of process chambers are provided herein. In some embodiments, a method of conditioning interior surfaces of a process chamber may include maintaining a process chamber at a first pressure and at a first temperature of less than about 800 degrees Celsius; providing a process gas to the process chamber at the first pressure and the first temperature, wherein the process gas comprises chlorine and nitrogen to remove residue disposed on interior surfaces of the process chamber; and increasing the pressure in the process chamber from the first pressure to a second pressure while continuing to provide the process gas to the process chamber.

Abstract: Embodiments described herein provide methods for processing a substrate. One embodiment comprises positioning a substrate in a processing region of a processing chamber, exposing a surface of the substrate disposed in the processing chamber to an oxygen containing gas to form a first oxygen containing layer on the surface, removing at least a portion of the first oxygen containing layer to expose at least a portion of the surface of the substrate, and exposing the surface of the substrate to an oxygen containing gas to form a second oxygen containing layer on the surface.

Abstract: Methods and apparatus are disclosed for the formation of vaporizing liquid precursor materials. The methods or apparatus can be used as part of a chemical vapor deposition apparatus or system, for example for forming films on substrates. The methods and apparatus involve providing a vessel for containing a liquid precursor and diffusing element having external cross-section dimensions substantially equal to the internal cross-sectional dimensions of the vessel.

Abstract: The present invention generally provides apparatus and method for forming a clean and damage free surface on a semiconductor substrate. One embodiment of the present invention provides a system that contains a cleaning chamber that is adapted to expose a surface of substrate to a plasma cleaning process prior to forming an epitaxial layer thereon. In one embodiment, a method is employed to reduce the contamination of a substrate processed in the cleaning chamber by depositing a gettering material on the inner surfaces of the cleaning chamber prior to performing a cleaning process on a substrate. In one embodiment, oxidation and etching steps are repeatedly performed on a substrate in the cleaning chamber to expose or create a clean surface on a substrate that can then have an epitaxial placed thereon. In one embodiment, a low energy plasma is used during the cleaning step.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having a substrate support disposed therein to support a processing surface of a substrate at a desired position within the process chamber; a first inlet port to provide a first process gas over the processing surface of the substrate in a first direction; a second inlet port to provide a second process gas over the processing surface of the substrate in a second direction different from the first direction, wherein an azimuthal angle measured between the first direction and the second direction with respect to a central axis of the substrate support is up to about 145 degrees; and an exhaust port disposed opposite the first inlet port to exhaust the first and second process gases from the process chamber.

Abstract: A method of forming a silicon nitride layer is described. According to the present invention, a silicon nitride layer is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550° C.) to form a silicon nitride layer. The thermally deposited silicon nitride layer is then treated with hydrogen radicals to form a treated silicon nitride layer.

Abstract: Methods and apparatus are disclosed for the formation of vaporizing liquid precursor materials. The methods or apparatus can be used as part of a chemical vapor deposition apparatus or system, for example for forming films on substrates. The methods and apparatus involve providing a vessel for containing a liquid precursor and diffusing element having external cross-section dimensions substantially equal to the internal cross-sectional dimensions of the vessel.

Abstract: Embodiments of a parallel system for epitaxial deposition are disclosed herein. In some embodiments, a parallel system for epitaxial deposition includes a first body having a first process chamber and a second process chamber disposed within the first body; a shared gas injection system coupled to each of the first and the second process chambers; and a shared exhaust system coupled to each of the first and second process chambers, the exhaust system having independent control of an exhaust pressure from each chamber. In some embodiments, the gas injection system provides independent control of flow rate of a gas entering each chamber.

Abstract: A method for epitaxially forming a silicon-containing material on a substrate surface utilizes a halogen containing gas as both an etching gas as well as a carrier gas through adjustments of the process chamber temperature and pressure. It is beneficial to utilize HCl as the halogen containing gas because converting HCl from a carrier gas to an etching gas can easily be performed by adjusting the chamber pressure.

Abstract: The present invention generally provides apparatus and method for forming a clean and damage free surface on a semiconductor substrate. One embodiment of the present invention provides a system that contains a cleaning chamber that is adapted to expose a surface of substrate to a plasma cleaning process prior to forming an epitaxial layer thereon. In one embodiment, a method is employed to reduce the contamination of a substrate processed in the cleaning chamber by depositing a gettering material on the inner surfaces of the cleaning chamber prior to performing a cleaning process on a substrate. In one embodiment, oxidation and etching steps are repeatedly performed on a substrate in the cleaning chamber to expose or create a clean surface on a substrate that can then have an epitaxial placed thereon. In one embodiment, a low energy plasma is used during the cleaning step.

Abstract: Embodiments of the invention generally provide a method for depositing a film containing silicon (Si) and nitrogen (N). In one embodiment, the method includes heating a substrate disposed in a processing chamber to a temperature less than about 650 degrees Celsius, flowing a nitrogen-containing gas into the processing chamber, flowing a silicon-containing gas into the processing chamber, and depositing a SiN-containing layer on a substrate. The silicon-containing gas is at least one of a gas identified as NR2—Si(R?2)—Si(R?2)—NR2 (amino(di)silanes), R3—Si—N?N?N (silyl azides), R?3—Si—NR—NR2 (silyl hydrazines) or 1,3,4,5,7,8-hexamethytetrasiliazane, wherein R and R? comprise at least one functional group selected from the group of a halogen, an organic group having one or more double bonds, an organic group having one or more triple bonds, an aliphatic alkyl group, a cyclical alkyl group, an aromatic group, an organosilicon group, an alkyamino group, or a cyclic group containing N or Si.

Abstract: A method of forming a silicon nitride film is described. According to the present invention, a silicon nitride film is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550° C.) to form a silicon nitride film. The thermally deposited silicon nitride film is then treated with hydrogen radicals to form a treated silicon nitride film.

Abstract: A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.

Abstract: A method of forming a silicon nitride layer is described. According to the present invention, a silicon nitride layer is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550° C.) to form a silicon nitride layer. The thermally deposited silicon nitride layer is then treated with hydrogen radicals to form a treated silicon nitride layer.

Abstract: A method of forming a silicon nitride film is described. According to the present invention, a silicon nitride film is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550° C.) to form a silicon nitride film. The thermally deposited silicon nitride film is then treated with hydrogen radicals to form a treated silicon nitride film.