Patents by Inventor Errol C. Sanchez
Errol C. Sanchez has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20220059342Abstract: Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.Type: ApplicationFiled: November 1, 2021Publication date: February 24, 2022Inventors: Lara HAWRYLCHAK, Schubert S. CHU, Tushar MANDREKAR, Errol C. SANCHEZ, Kin Pong LO
-
Patent number: 11164737Abstract: Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.Type: GrantFiled: August 10, 2018Date of Patent: November 2, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Lara Hawrylchak, Schubert S. Chu, Tushar Mandrekar, Errol C. Sanchez, Kin Pong Lo
-
Patent number: 11049719Abstract: In one implementation, a processing system includes a first transfer chamber coupling to at least one epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a first plasma chamber coupled to the second transfer chamber for removing oxides from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber. The transition station connects to the first transfer chamber and the second transfer chamber, and the transition station includes a second plasma chamber for removing contaminants from the surface of the substrate.Type: GrantFiled: August 7, 2018Date of Patent: June 29, 2021Assignee: Applied Materials, Inc.Inventors: Lara Hawrylchak, Kin Pong Lo, Errol C. Sanchez, Schubert S. Chu, Tushar Mandrekar
-
Publication number: 20210028075Abstract: A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.Type: ApplicationFiled: July 24, 2020Publication date: January 28, 2021Inventors: Zuoming ZHU, Shu-Kwan LAU, Ala MORADIAN, Enle CHOO, Flora Fong-Song CHANG, Vilen K. NESTOROV, Zhiyuan YE, Bindusagar MARATH SANKARATHODI, Maxim D. SHAPOSHNIKOV, Surendra Singh SRIVASTAVA, Zhepeng CONG, Patricia M. LIU, Errol C. SANCHEZ, Jenny C. LIN, Schubert S. CHU, Balakrishnam R. JAMPANA
-
Publication number: 20190067006Abstract: In one implementation, a processing system includes a first transfer chamber coupling to at least one epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a first plasma chamber coupled to the second transfer chamber for removing oxides from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber. The transition station connects to the first transfer chamber and the second transfer chamber, and the transition station includes a second plasma chamber for removing contaminants from the surface of the substrate.Type: ApplicationFiled: August 7, 2018Publication date: February 28, 2019Inventors: Lara HAWRYLCHAK, Kin Pong LO, Errol C. SANCHEZ, Schubert S. CHU, Tushar MANDREKAR
-
Publication number: 20190066998Abstract: Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.Type: ApplicationFiled: August 10, 2018Publication date: February 28, 2019Inventors: Lara HAWRYLCHAK, Schubert S. CHU, Tushar MANDREKAR, Errol C. SANCHEZ, Kin Pong LO
-
Publication number: 20190062904Abstract: Implementations of the present disclosure generally relate to an improved vacuum processing system. In one implementation, the vacuum processing system includes a first transfer chamber coupling to at least one vapor phase epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a plasma-cleaning chamber coupled to the first or second transfer chamber for removing contaminants from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber.Type: ApplicationFiled: August 30, 2018Publication date: February 28, 2019Inventors: Lara HAWRYLCHAK, Kin Pong LO, Errol C. SANCHEZ
-
Patent number: 9245786Abstract: Embodiments of the present invention provide apparatus and methods for positioning a substrate in a processing chamber using capacitive sensors. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus includes first and second capacitive sensors disposed in an inner volume. The first capacitive sensor is positioned to detect a location of an edge of the substrate at a first angular location. The second capacitive sensor is positioned to detect a vertical position of the substrate.Type: GrantFiled: June 2, 2011Date of Patent: January 26, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Blake Koelmel, Joseph M. Ranish, Errol C. Sanchez
-
Publication number: 20120304928Abstract: Embodiments of the present invention provide apparatus and methods for positioning a substrate in a processing chamber using capacitive sensors. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus includes first and second capacitive sensors disposed in an inner volume. The first capacitive sensor is positioned to detect a location of an edge of the substrate at a first angular location. The second capacitive sensor is positioned to detect a vertical position of the substrate.Type: ApplicationFiled: June 2, 2011Publication date: December 6, 2012Applicant: APPLIED MATERIALS, INC.Inventors: BLAKE KOELMEL, Joseph M. Ranish, Errol C. Sanchez
-
Publication number: 20100075488Abstract: An apparatus for processing a substrate, comprising a processing chamber and a substrate support and lift pin assembly disposed within the chamber. The substrate support and lift pin assembly are coupled to a lift mechanism that controls positioning of the substrate support and the lift pins and provides rotation for the substrate support. The lift mechanism includes at least one sensor capable of generating a signal when clearance between the substrate support and the lift pins allows rotation of the substrate support to begin. The substrate support capable of concurrent axial motion and rotation may be used in a processing chamber comprising multiple processing zones separated by edge rings. Substrates may be subjected to successive or cyclical processes by moving between the multiple processing zones.Type: ApplicationFiled: September 15, 2009Publication date: March 25, 2010Applicant: APPLIED MATERIALS, INC.Inventors: Richard O. Collins, Nyi O. Myo, Kevin J. Bautista, John S. Webb, Errol C. Sanchez, Yi-Chiau Huang, Kailash Kiran Patalay, Zhi Yuan Zhou, Wilson Yu
-
Publication number: 20040266123Abstract: One embodiment of the present invention is a method for treating silicon nitride (SixNy) films that includes electron beam treating the silicon nitride film.Type: ApplicationFiled: April 13, 2004Publication date: December 30, 2004Applicant: Applied Materials, Inc.Inventors: Zhenjiang Cui, Jun Zhao, Rick J. Roberts, Shulin Wang, Errol A. C. Sanchez, Aihua Chen
-
Patent number: 6582522Abstract: Provided herein is an emissivity-change-free pumping plate kit used in a single wafer chamber. This kit comprises a top open pumping plate, and optionally a skirt and/or a second stage choking plate. The skirt may be installed around the wafer heater, underneath the wafer heater, or along the chamber body inside the chamber. The choking plate is installed downstream of the top open pumping plate along the purge gas flow. Also provided is a method of preventing emissivity change and further providing optimal film thickness uniformity during wafer processing by utilizing such kit in the chamber.Type: GrantFiled: March 2, 2001Date of Patent: June 24, 2003Assignee: Applied Materials, Inc.Inventors: Lee Luo, Henry Ho, Shulin Wang, Binh Hoa Tran, Alexander Tam, Errol A. C. Sanchez, Xianzhi Tao, Steven A. Chen
-
Publication number: 20020137312Abstract: Provided herein is an emissivity-change-free pumping plate kit used in a single wafer chamber. This kit comprises a top open pumping plate, and optionally a skirt and/or a second stage choking plate. The skirt may be installed around the wafer heater, underneath the wafer heater, or along the chamber body inside the chamber. The choking plate is installed downstream of the top open pumping plate along the purge gas flow. Also provided is a method of preventing emissivity change and further providing optimal film thickness uniformity during wafer processing by utilizing such kit in the chamber.Type: ApplicationFiled: March 2, 2001Publication date: September 26, 2002Applicant: Applied Materials, Inc.Inventors: Lee Luo, Henry Ho, Shulin Wang, Binh Hoa Tran, Alexander Tam, Errol A.C. Sanchez, Xianzhi Tao, Steven A. Chen