Abstract: A semiconductor structure, system and method. The semiconductor structure comprises: a substrate including circuitry therein; and a semiconductor stack on the substrate, the semiconductor stack including: a first electrically conductive layer including a metal and electrically coupled to the circuitry of the substrate; and a second electrically conductive layer between the substrate and the first electrically conductive layer, the second electrically conductive layer including one of a refractory metal, or a combination including silicon, carbon and nitride. The second electrically conductive layer may serve as a barrier layer between the first electrically conductive layer and the material of the underlying substrate, in this manner avoiding the formation of an intermixing region between the metal of the first electrically conductive layer and the material of the substrate during deposition of the metal.