Patents by Inventor Erwan Gapihan
Erwan Gapihan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180240967Abstract: A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.Type: ApplicationFiled: April 18, 2018Publication date: August 23, 2018Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, CROCUS TECHNOLOGYInventors: Michael C. Gaidis, Erwan Gapihan, Rohit Kilaru, Eugene J. O'Sullivan
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Patent number: 10003014Abstract: A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.Type: GrantFiled: June 20, 2014Date of Patent: June 19, 2018Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, CROCUS TECHNOLOGYInventors: Michael C. Gaidis, Erwan Gapihan, Rohit Kilaru, Eugene J. O'Sullivan
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Patent number: 9847476Abstract: A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.Type: GrantFiled: February 14, 2017Date of Patent: December 19, 2017Assignees: International Business Machines Corporation, Crocus TechnologyInventors: Anthony J. Annunziata, Erwan Gapihan
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Patent number: 9728714Abstract: A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.Type: GrantFiled: July 28, 2016Date of Patent: August 8, 2017Assignees: International Business Machines Corporation, Crocus TechnologyInventors: Anthony J. Annunziata, Erwan Gapihan
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Publication number: 20170155041Abstract: A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.Type: ApplicationFiled: February 14, 2017Publication date: June 1, 2017Inventors: Anthony J. Annunziata, Erwan Gapihan
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Patent number: 9614146Abstract: A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.Type: GrantFiled: July 28, 2016Date of Patent: April 4, 2017Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, CROCUS TECHNOLOGYInventors: Anthony J. Annunziata, Erwan Gapihan
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Publication number: 20160336507Abstract: A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.Type: ApplicationFiled: July 28, 2016Publication date: November 17, 2016Inventors: Anthony J. Annunziata, Erwan Gapihan
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Publication number: 20160336506Abstract: A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.Type: ApplicationFiled: July 28, 2016Publication date: November 17, 2016Inventors: Anthony J. Annunziata, Erwan Gapihan
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Patent number: 9472749Abstract: A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.Type: GrantFiled: March 20, 2014Date of Patent: October 18, 2016Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, CROCUS TECHNOLOGYInventors: Anthony J. Annunziata, Erwan Gapihan
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Publication number: 20160276579Abstract: A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.Type: ApplicationFiled: June 1, 2016Publication date: September 22, 2016Inventors: Michael C. Gaidis, Erwan Gapihan, Rohit Kilaru, Eugene J. O'Sullivan
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Patent number: 9324937Abstract: A thermally assisted magnetoresistive random access memory (TAS-MRAM) device includes a magnetic tunnel junction interposed between a first electrical contact and a second electrical contact. The TAS-MRAM device further includes a dielectric layer that is formed on an upper surface of the first electrical contact and that encapsulates the second electrical contact. The dialectic layer has at least one vacuum cavity between an adjacent outer wall of the magnetic tunnel junction and the dielectric layer.Type: GrantFiled: March 24, 2015Date of Patent: April 26, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Anthony J. Annunziata, Erwan Gapihan
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Publication number: 20150372225Abstract: A method of forming a memory device that in one embodiment may include forming a magnetic tunnel junction on a first electrode using an electrically conductive mask and subtractive etch method. Following formation of the magnetic tunnel junction, at least one dielectric layer is deposited to encapsulate the magnetic tunnel junction. Ion beam etching/Ion beam milling may then remove the portion of the at least one dielectric layer that is present on the electrically conductive mask, wherein a remaining portion of the at least one dielectric layer is present over the first electrode. A second electrode may then be formed in contact with the electrically conductive mask.Type: ApplicationFiled: June 20, 2014Publication date: December 24, 2015Inventors: Michael C. Gaidis, Erwan Gapihan, Rohit Kilaru, Eugene J. O'Sullivan
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Publication number: 20150270481Abstract: A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.Type: ApplicationFiled: March 20, 2014Publication date: September 24, 2015Applicants: Crocus Technology, International Business Machines CorporationInventors: Anthony J. Annunziata, Erwan Gapihan
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Patent number: 8411500Abstract: The present disclosure concerns a magnetic element to be written using a thermally-assisted switching write operation comprising a magnetic tunnel junction formed from a tunnel barrier being disposed between first and second magnetic layers, said second magnetic layer having a second magnetization which direction can be adjusted during a write operation when the magnetic tunnel junction is heated at a high threshold temperature; an upper current line connected at the upper end of the magnetic tunnel junction; and a strap portion extending laterally and connected to the bottom end of the magnetic tunnel junction; the magnetic device further comprising a bottom thermal insulating layer extending substantially parallel to the strap portion and arranged such that the strap portion is between the magnetic tunnel junction and the bottom thermal insulating layer. The magnetic element allows for reducing heat losses during the write operation and has reduced power consumption.Type: GrantFiled: June 7, 2011Date of Patent: April 2, 2013Assignee: Crocus Technology SAInventors: Erwan Gapihan, Kenneth Mackay, Jason Reid
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Patent number: 8289765Abstract: A magnetic random access memory (MRAM) cell with a thermally assisted writing procedure comprising a magnetic tunnel junction formed from a magnetic storage layer, a reference layer, and an insulating layer inserted between the reference layer and the storage layer; and a first strap portion laterally connecting one end of the magnetic tunnel junction to a first selection transistor; wherein the cell further comprises a second strap portion extending opposite to the first strap portion and connecting laterally said one end of the magnetic tunnel junction to a second selection transistor, and in that said first and second strap portions being adapted for passing a portion of current via the first and second selection transistors. The disclosed cell has lower power consumption than conventional MRAM cells.Type: GrantFiled: February 19, 2010Date of Patent: October 16, 2012Assignee: Crocus Technology SAInventors: Virgile Javerliac, Erwan Gapihan, Mourad El Baraji
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Publication number: 20120008383Abstract: The present disclosure concerns a magnetic element to be written using a thermally-assisted switching write operation comprising a magnetic tunnel junction formed from a tunnel barrier being disposed between first and second magnetic layers, said second magnetic layer having a second magnetization which direction can be adjusted during a write operation when the magnetic tunnel junction is heated at a high threshold temperature; an upper current line connected at the upper end of the magnetic tunnel junction; and a strap portion extending laterally and connected to the bottom end of the magnetic tunnel junction; the magnetic device further comprising a bottom thermal insulating layer extending substantially parallel to the strap portion and arranged such that the strap portion is between the magnetic tunnel junction and the bottom thermal insulating layer. The magnetic element allows for reducing heat losses during the write operation and has reduced power consumption.Type: ApplicationFiled: June 7, 2011Publication date: January 12, 2012Applicant: CROCUS TECHNOLOGY SAInventors: Erwan Gapihan, Kenneth Mackay, Jason Reid
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Publication number: 20100208516Abstract: A magnetic random access memory (MRAM) cell with a thermally assisted writing procedure comprising a magnetic tunnel junction formed from a magnetic storage layer, a reference layer, and an insulating layer inserted between the reference layer and the storage layer; and a first strap portion laterally connecting one end of the magnetic tunnel junction to a first selection transistor; wherein the cell further comprises a second strap portion extending opposite to the first strap portion and connecting laterally said one end of the magnetic tunnel junction to a second selection transistor, and in that said first and second strap portions being adapted for passing a portion of current via the first and second selection transistors. The disclosed cell has lower power consumption than conventional MRAM cells.Type: ApplicationFiled: February 19, 2010Publication date: August 19, 2010Applicant: CROCUS TECHNOLOGY SAInventors: Virgile JAVERLIAC, Erwan GAPIHAN, Mourad EL BARAJI