Patents by Inventor Erwan Yann Ruawel

Erwan Yann Ruawel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • INTEGRATED ELECTRONIC CIRCUIT INCLUDING A THIN FILM PORTION BASED ON HAFNIUM OXIDE
    Publication number: 20100059834
    Abstract: An integrated electronic circuit has a thin layer portion based on hafnium oxide. This portion additionally contains magnesium atoms, so that the portion is in the form of a hafnium-and-magnesium mixed oxide. Such a portion has a high dielectric constant and a very low leakage current. It is particularly suitable for forming a part of a gate insulation layer of a MOS transistor or a part of a MIM capacitor dielectric.
    Type: Application
    Filed: April 25, 2008
    Publication date: March 11, 2010
    Applicants: STMicroelectronics (Crolles) SAS, Centre National de La Recherche Scientifique - CNRS -, Institut National Polytechnique De Grenoble
    Inventors: Catherine Dubourdieu, Erwan Yann Ruawel, Vincent Cosnier, Sandrine Lhostis, Daniel-Camille Bensahel