Abstract: A power semiconductor device having a power semiconductor transistor configuration includes: a semiconductor body having a front side coupled to a first load terminal structure, a backside coupled to a second load terminal structure, and a lateral chip edge; an active region for conducting a load current in a conducting state; and an edge termination region separating the active region and lateral chip edge. At the front-side, the edge termination region includes a protection region devoid of any metallic structure, unless the metallic structure is electrically shielded from below by a polysilicon layer that extends further towards the lateral chip edge than the metallic structure by a lateral distance of at least 20 ?m. In a blocking state, the protection region accommodates a voltage change of at least 90% of a blocking voltage inside the semiconductor body in a lateral direction from the active region towards the lateral chip edge.

Abstract: A method for forming a power semiconductor device is provided. The method includes: providing a semiconductor wafer grown by a Czochralski process and having a first side; forming an n-type substrate doping layer in the semiconductor wafer at the first side, the substrate doping layer having a doping concentration of at least 1017/cm3; and forming an epitaxy layer on the first side of the semiconductor wafer after forming the n-type substrate doping layer.

Abstract: A power semiconductor device having a power semiconductor transistor configuration includes: a semiconductor body having a front side coupled to a first load terminal structure, a backside coupled to a second load terminal structure, and a lateral chip edge; an active region for conducting a load current in a conducting state; and an edge termination region separating the active region and lateral chip edge. At the front-side, the edge termination region includes a protection region devoid of any metallic structure, unless the metallic structure is electrically shielded from below by a polysilicon layer that extends further towards the lateral chip edge than the metallic structure by a lateral distance of at least 20 ?m. In a blocking state, the protection region accommodates a voltage change of at least 90% of a blocking voltage inside the semiconductor body in a lateral direction from the active region towards the lateral chip edge.

Abstract: A method of producing a semiconductor device is presented. The method comprises: providing a semiconductor substrate having a surface; epitaxially growing, along a vertical direction (Z) perpendicular to the surface, a back side emitter layer on top of the surface, wherein the back side emitter layer has dopants of a first conductivity type or dopants of a second conductivity type complementary to the first conductivity type; epitaxially growing, along the vertical direction (Z), a drift layer having dopants of the first conductivity type above the back side emitter layer, wherein a dopant concentration of the back side emitter layer is higher than a dopant concentration of the drift layer; and creating, either within or on top of the drift layer, a body region having dopants of the second conductivity type, a transition between the body region and the drift layer forming a pn-junction (Zpn).

Abstract: A method for forming a power semiconductor device is provided. The method includes: providing a semiconductor wafer grown by a Czochralski process and having a first side; forming an n-type substrate doping layer in the semiconductor wafer at the first side, the substrate doping layer having a doping concentration of at least 1017/cm3; and forming an epitaxy layer on the first side of the semiconductor wafer after forming the n-type substrate doping layer.

Abstract: A method for forming a semiconductor device includes incorporating dopants of a first conductivity type into a nearby body region portion of a semiconductor substrate having a base doping of the first conductivity type. The incorporation of the dopants of the first conductivity type is masked by a mask structure at at least part of an edge region of the semiconductor substrate. The method further includes forming a body region of a transistor structure of a second conductivity type in the semiconductor substrate. The nearby body region portion of the semiconductor substrate is located adjacent to the body region of the transistor structure.

Abstract: A method for forming a semiconductor device includes incorporating dopants of a first conductivity type into a nearby body region portion of a semiconductor substrate having a base doping of the first conductivity type. The incorporation of the dopants of the first conductivity type is masked by a mask structure at at least part of an edge region of the semiconductor substrate. The method further includes forming a body region of a transistor structure of a second conductivity type in the semiconductor substrate. The nearby body region portion of the semiconductor substrate is located adjacent to the body region of the transistor structure.

Abstract: A method of producing a semiconductor device is presented. The method comprises: providing a semiconductor substrate having a surface; epitaxially growing, along a vertical direction (Z) perpendicular to the surface, a back side emitter layer on top of the surface, wherein the back side emitter layer has dopants of a first conductivity type or dopants of a second conductivity type complementary to the first conductivity type; epitaxially growing, along the vertical direction (Z), a drift layer having dopants of the first conductivity type above the back side emitter layer, wherein a dopant concentration of the back side emitter layer is higher than a dopant concentration of the drift layer; and creating, either within or on top of the drift layer, a body region having dopants of the second conductivity type, a transition between the body region and the drift layer forming a pn-junction (Zpn).

Abstract: A method of producing a semiconductor device is presented. The method comprises: providing a semiconductor substrate having a surface; epitaxially growing, along a vertical direction (Z) perpendicular to the surface, a back side emitter layer on top of the surface, wherein the back side emitter layer has dopants of a first conductivity type or dopants of a second conductivity type complementary to the first conductivity type; epitaxially growing, along the vertical direction (Z), a drift layer having dopants of the first conductivity type above the back side emitter layer, wherein a dopant concentration of the back side emitter layer is higher than a dopant concentration of the drift layer; and creating, either within or on top of the drift layer, a body region having dopants of the second conductivity type, a transition between the body region and the drift layer forming a pn-junction (Zpn).

Abstract: A method of producing a semiconductor device is presented. The method comprises: providing a semiconductor substrate having a surface; epitaxially growing, along a vertical direction (Z) perpendicular to the surface, a back side emitter layer on top of the surface, wherein the back side emitter layer has dopants of a first conductivity type or dopants of a second conductivity type complementary to the first conductivity type; epitaxially growing, along the vertical direction (Z), a drift layer having dopants of the first conductivity type above the back side emitter layer, wherein a dopant concentration of the back side emitter layer is higher than a dopant concentration of the drift layer; and creating, either within or on top of the drift layer, a body region having dopants of the second conductivity type, a transition between the body region and the drift layer forming a pn-junction (Zpn).